SUM70090E-GE3

SUM70090E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () MAX. ID (A) c 0.0089 at VGS = 10 V 50 0.0093 at VGS = 7.5 V 50 • ThunderFET® power MOSFET Qg (TYP.) • Maximum 175 °C junction temperature • Qgd / Qgs ratio < 1 optimizes switching characteristics 33 nC • 100 % Rg and UIS tested TO-263 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Power supply - Secondary synchronous rectification S • DC/DC converter D Top View D G • Power tools G • Motor drive switch Ordering Information: SUM70090E-GE3 (lead (Pb)-free and halogen-free) • DC/AC inverter • Battery management S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current (t = 100 μs) Avalanche Current Single Avalanche Energy a L = 0.1 mH TC = 25 °C Maximum Power Dissipation a TC = 70 °C Operating Junction and Storage Temperature Range b ID V 50 c 50 c IDM 120 IAS 40 EAS 80 PD UNIT 125 87.5 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient (PCB Mount) b Junction-to-Case (Drain) RthJA 40 RthJC 1.2 °C/W Notes a. Duty cycle  1 %. b. When mounted on 1" square PCB (FR4 material). c. Package limited. S16-0163-Rev. A, 01-Feb-16 Document Number: 64432 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM70090E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 2 - 4 IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = 100 V, VGS = 0 V - - 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C - - 150 VDS = 100 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS  10 V, VGS = 10 V 50 - - A Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Dynamic IDSS ID(on) RDS(on) gfs VGS = 10 V, ID = 20 A - 0.0074 0.0089 VGS = 7.5 V, ID = 15 A - 0.0077 0.0093 VDS = 15 V, ID = 10 A - 38 - - 1950 - V nA μA  S b Input Capacitance Ciss Output Capacitance Coss - 845 - Reverse Transfer Capacitance Crss - 54 - Total Gate Charge c Qg - 33 50 Gate-Source Charge c Gate-Drain Charge c VDS = 50 V, VGS = 10 V, ID = 20 A - 8.8 - - 7.5 - f = 1 MHz 0.7 3.5 7 - 15 30 VDD = 50 V, RL = 5  ID  10 A, VGEN = 10 V, Rg = 1  - 27 54 - 36 72 - 45 90 Qgd Gate Resistance Turn-On Delay Time Qgs VGS = 0 V, VDS = 50 V, f = 1 MHz Rg c Rise Time c Turn-Off Delay Time c Fall Time c td(on) tr td(off) tf pF nC  ns Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Current (t = 100 μs) ISM Forward Voltage a VSD Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 10 A, VGS = 0 V trr IRM(REC) Qrr IF = -10 A, dI/dt = 100 A/μs - - 120 A - 0.8 1.5 V - 77 116 ns - 4.2 6.3 A - 145 365 nC Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0163-Rev. A, 01-Feb-16 Document Number: 64432 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM70090E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 120 10000 100 60 VGS = 5 V 100 30 75 1000 1st line 2nd line 1000 2nd line ID - Drain Current (A) 90 1st line 2nd line TC = 25 °C 50 100 TC = 125 °C 25 TC = -55 °C VGS = 4 V 0 10 0 1 2 3 4 0 5 10 0 2 4 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 0.015 10000 3600 10000 3000 1000 VGS = 7.5 V 0.009 VGS = 10 V 0.006 100 2nd line C - Capacitance (pF) 0.012 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 6 0.003 1000 2400 Ciss 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 6 V 1800 1200 100 Coss 600 Crss 0 0 10 30 60 90 120 10 0 20 80 VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title 10000 60 ID = 15 A VDS = 30 V 1000 1st line 2nd line 6 4 100 2 0 10 14 21 28 35 2nd line gfs - Transconductance (S) TC = -55 °C 8 7 100 Axis Title 10000 0 60 ID - Drain Current (A) 2nd line 10 2nd line VGS - Gate-to-Source Voltage (V) 40 45 TC = 25 °C 1000 30 TC = 125 °C 100 15 0 0 3.0 6.0 9.0 Qg - Total Gate Charge (nC) 2nd line ID - Drain Current (A) 2nd line Gate Charge Transconductance S16-0163-Rev. A, 01-Feb-16 1st line 2nd line 0 12.0 10 15.0 Document Number: 64432 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM70090E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 ID = 20 A 10000 VGS = 10 V 10 VGS = 7.5 V 1.2 100 0.9 0.6 0 25 50 0.1 100 0.01 10 0 75 100 125 150 175 0.2 0.4 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title ID = 250 μA TJ = 150 °C 0.012 3.0 1000 1st line 2nd line 1000 2nd line VGS(th) (V) 0.024 0.018 10000 3.6 10000 1st line 2nd line 2.4 100 100 TJ = 25 °C 1.8 0.006 0 2 4 6 8 10 1.2 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title Axis Title 10000 1000 10000 120 ID = 250 μA Limited by IDM 1st line 2nd line 1000 112 100 108 2nd line ID - Drain Current (A) 100 116 10 1000 Limited by RDS(on)* 100 μs 1 ms 10 ms DC, 10 s, 100 1 s, 100 ms 1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.6 TJ - Junction Temperature (°C) 2nd line 0.03 2nd line VDS - Drain-to-Source Voltage (V) 1000 TJ = 25 °C 0.001 10 -50 -25 TJ = 150 °C 1 1st line 2nd line 1000 1.5 2nd line IS - Source Current (A) 1.8 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.1 0.1 TC = 25 °C Single Pulse 104 10 -50 -25 0 25 50 75 100 125 150 175 BVDSS Limited 0.01 10 0.1 1 10 100 TJ - Temperature (°C) 2nd line VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Drain Source Voltage vs. Junction Temperature Safe Operating Area S16-0163-Rev. A, 01-Feb-16 Document Number: 64432 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM70090E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 10000 75 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 Package limited 50 100 25 0 10 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) 2nd line Current De-Rating 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJC = 1.2 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64432. S16-0163-Rev. A, 01-Feb-16 Document Number: 64432 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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