SUD40N02-3M3P-E3

New Product SUD40N02-3m3P Vishay Siliconix N-Channel 20-V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 40 0.0044 at VGS = 4.5 V 40 VDS (V) 20 Qg (Typ) • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT 30 nC APPLICATIONS • Server TO-252 D G Drain Connected to Tab G D S Top View S Order Number: SUD40N02-3m3P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Limit Drain-Source Voltage Gate-Source Voltage VGS ± 20 TC = 100 °C TA = 25 °C 40a ID 24.4b 17.2b TA = 100 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C 40a IS 2.8b TC = 25 °C 79 39.5 PD W 3.3b b TA = 100 °C 1.6 TJ, Tstg Operating Junction and Storage Temperature Range A 100 TC = 100 °C TA = 25 °C V 40a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit 20 °C - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Typical Steady State Symbol RthJA Maximum 37 45 Steady State RthJC 1.5 1.9 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. Document Number: 69819 S-80260-Rev. A, 04-Feb-08 www.vishay.com 1 New Product SUD40N02-3m3P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea mV/°C - 6.9 1 3 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 100 °C 20 VDS ≥ 5 V, VGS = 10 V rDS(on) Forward Transconductancea V 21 gfs 30 µA A VGS = 10 V, ID = 20 A 0.0027 0.0033 VGS = 4.5 V, ID = 20 A 0.0036 0.0044 VDS = 15 V, ID = 20 A 100 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 6520 VDS = 10 V, VGS = 0 V, f = 1 MHz 1430 pF 770 VDS = 10 V, VGS = 10 V, ID = 50 A 105 160 50 75 VDS = 10 V, VGS = 4.5 V, ID = 50 A 17 f = 1 MHz 1.2 1.9 40 60 nC 14 td(on) VDD = 10 V, RL = 0.2 Ω ID ≅ 50 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) 30 45 67 101 tf 33 50 td(on) 13 20 VDD = 10 V, RL = 0.2 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf 7 11 40 60 9 14 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 40 100 IS = 20 A IF = 50 A, di/dt = 100 A/µs, TJ = 25 °C A 0.81 1.2 V 38 57 ns 34 51 nC 18 20 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69819 S-80260-Rev. A, 04-Feb-08 New Product SUD40N02-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 3.0 VGS = 10 thru 4 V TC = - 55 °C 2.4 I D - Drain Current (A) I D - Drain Current (A) 60 40 VGS = 3 V 1.8 TC = 25 °C 1.2 20 0.6 TC = 125 °C VGS = 2 V 0 0.0 0.4 0.8 1.2 1.6 0.0 0.0 2.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 0.010 0.0040 r DS(on) - On-Resistance (Ω) r DS(on) - D to S On-Resistance (Ω) ID = 20 A VGS = 4.5 V 0.0036 0.0032 VGS = 10 V 0.0028 0.008 0.006 TA = 125 °C 0.004 0.002 TA = 25 °C 0.000 0.0024 0 20 40 60 80 2 100 6 8 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current On-Resistance vs. VGS vs. Temperature 10 8000 Ciss VGS - Gate-to-Source Voltage (V) ID = 50 A 6000 C - Capacitance (pF) 4 4000 Coss 2000 VDS = 10 V 8 6 VDS = 16 V 4 2 Crss 0 0 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 69819 S-80260-Rev. A, 04-Feb-08 20 0 20 40 60 80 100 120 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 New Product SUD40N02-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 1.7 ID = 20 A I S - Source Current (A) VGS = 10 V, 4.5 V (Normalized) r DS(on) - On-Resistance 1.5 1.3 1.1 TJ = 150 °C 10 TJ = 25 °C 0.9 0.7 - 50 - 25 0 25 50 75 100 125 150 1 0.0 175 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Forward Diode Voltage vs. Temperature On-Resistance vs. Junction Temperature 2.4 200 2.0 1.6 Power (W) VGS(th) (V) 150 ID = 250 µA 1.2 100 50 0.8 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.01 175 0.1 10 100 Single Pulse Power, Junction-to-Ambient Threshold Voltage 1000 250 100 I D - Drain Current (A) 200 Power (W) 1 Time (s) TJ - Temperature (°C) 150 Limited by rDS(on)* 1 ms 10 ms 10 100 ms 1s 1 10 s DC 0.1 100 0.01 BVDSS TA = 25 °C Single Pulse 50 0.001 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Case 10 0.001 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69819 S-80260-Rev. A, 04-Feb-08 New Product SUD40N02-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 30 Limited by rDS(on)* 24 1 ms 10 ms DC 10 I D - Drain Current (A) I D - Drain Current (A) 100 1 0.1 12 6 0.01 BVDSS TA = 25 °C Single Pulse 0.001 0.01 18 0 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified 0 25 50 75 100 125 150 175 TA - Ambient Temperature (°C) Current Derating**, Junction-to-Ambient Safe Operating Area, Junction-to-Case 4 150 120 Power (W) I D - Drain Current (A) 3 90 60 2 Package Limited 1 30 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TA - Ambient Temperature (°C) TC - Case Temperature (°C) Power Derating**, Junction-to-Ambient Current Derating**, Junction-to-Case 100 Power (W) 80 60 40 20 ** The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 175 upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Power Derating**, Junction-to-Case Document Number: 69819 S-80260-Rev. A, 04-Feb-08 www.vishay.com 5 New Product SUD40N02-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69819. www.vishay.com 6 Document Number: 69819 S-80260-Rev. A, 04-Feb-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000