SUM33N20-60P-E3

SUM33N20-60P Vishay Siliconix New Product N-Channel 200-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 200 rDS(on) (Ω) ID (A) 0.059 at VGS = 15 V 33 0.060 at VGS = 10 V 33 Qg (Typ) 53 • TrenchFET® Power MOSFETS • 150 °C Junction Temperature • 100 % UIS and Rg Tested RoHS COMPLIANT APPLICATIONS • Power Supply • Lighting • Industrial D TO-263 G G D S S Top View Ordering Information: SUM33N20-60P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 25 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc ID Unit V 33 20.8 IDM 80 IAS 20 EAS 20 A mJ b PD 156 3.12 W TJ, Tstg - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 40 Junction-to-Case (Drain) RthJC 0.8 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). Document Number: 74291 S-62209-Rev. A, 30-Oct-06 www.vishay.com 1 SUM33N20-60P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VDS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250 µA 2.5 Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS 4.5 VDS = 0 V, VGS = ± 20 V ± 100 VDS = 0 V, VGS = ± 25 V ± 300 VDS = 200 V, VGS = 0 V 1 VDS = 200 V, VGS = 0 V, TJ = 100 °C 25 VDS = 200 V, VGS = 0 V, TJ = 150 °C On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS ≥ 10 V, VGS = 10 V ID(on) rDS(on) µA A VGS = 10 V, ID = 20 A 0.049 0.060 VGS = 15 V, ID = 20 A 0.0485 0.059 0.110 VGS = 10 V, ID = 20 A, TJ = 150 °C 0.144 VDS = 15 V, ID = 20 A nA 250 40 VGS = 10 V, ID = 20 A, TJ = 100 °C gfs V 25 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Time 2735 VGS = 0 V, VDS = 25 V, f = 1 MHz 117 VDS = 100 V, VGS = 15 V, ID = 50 A VDS = 100 V, VGS = 10 V, ID = 50 A Fall Timec td(off) 75 113 53 80 14 f = 1 MHz VDD = 100 V, RL = 2 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics (TC = 25 1.2 1.8 16 25 170 260 26 40 9 18 IS 33 ISM 80 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Ω ns °C)b Pulsed Current Continuous Current nC 17.5 td(on) tr c pF 271 IF = 20 A, VGS = 0 V A 0.86 1.5 V trr 114 170 ns IRM(REC) 8 12 A 0.46 0.69 µC Qrr IF = 40 A, di/dt = 100 A/µs Reverse Recovery Fall Time ta 82 Reverse Recovery Rise Time tb 32 nS Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74291 S-62209-Rev. A, 30-Oct-06 SUM33N20-60P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 100 80 VGS = 15, 12, 10, 8, 6 V 64 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 20 48 32 TC = 125 °C 25 °C 16 5V - 55 °C 0 0 0 3 6 9 12 15 0 VDS - Drain-to-Source Voltage (V) 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 120 0.080 r DS(on) - On-Resistance (Ω) g f s - Transconductance (S) 100 T C = - 55 °C 80 25 °C 60 125 °C 40 0.070 0.060 VGS = 10 V VGS = 15 V 0.050 20 0 0.040 0 10 20 30 40 50 60 0 16 32 48 64 ID - Drain Current (A) I D - Drain Current (A) Transconductance On-Resistance vs. Drain Current 80 3800 0.19 3040 Ciss C - Capacitance (pF) r D S(on) - On-Resistance (Ω) ID = 20 A 0.16 0.13 125 °C 0.10 2280 1520 760 0.07 Crss 25 °C Coss 0 0.04 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 74291 S-62209-Rev. A, 30-Oct-06 15 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SUM33N20-60P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 2.9 VGS - Gate-to-Source Voltage (V) 15 VDS = 50 V, 100 V, 150V ID = 50 A ID = 20 A 2.4 rDS(on) - On-Resistance (Normalized) 12 9 6 VGS = 10 V 1.9 VGS = 15 V 1.4 0.9 3 0.4 - 50 0 0 16 32 48 64 80 - 25 Qg - Total Gate Charge (nC) Gate Charge 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature 0.7 100 0.2 VGS(th) Variance (V) 10 I S - Source Current (A) 0 TJ - Junction Temperature (°C) TJ =150 °C 1 TJ = 25 °C 0.1 0.01 - 0.3 ID = 5 mA - 0.8 ID = 250 µA - 1.3 - 1.8 0.001 0.0 0.2 0.4 0.6 0.8 1.0 - 2.3 - 50 1.2 - 25 0 25 50 75 100 VSD - Source-to-Drain Voltage TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 250 125 150 175 100 I D = 10 mA 230 I Dav A V(BR)DSS (normalized) 240 220 10 150 °C 25 °C 210 200 190 - 50 - 25 0 25 50 75 100 125 T J - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 150 175 1 0.00001 0.0001 0.001 0.01 0.1 t av - (Sec) Single Pulse Avalanche Current Capability vs. Time Document Number: 74291 S-62209-Rev. A, 30-Oct-06 SUM33N20-60P Vishay Siliconix THERMAL RATINGS 100 40 *Limited by rDS (on) 32 I D - Drain Current (A) I D - Drain Current (A) 100 µs 24 16 10 1 ms TC = 25 °C Single Pulse 1 10 ms 100 ms DC 8 0 0 25 50 75 100 125 0.1 0.1 150 T C - Case Temperature (°C) 100 1 10 1000 VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which rDS (on) is specified Safe Operating Area Maximum Drain Curent vs. Case Temperature 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0 .1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74291 Document Number: 74291 S-62209-Rev. A, 30-Oct-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1