SUP60N06-12P-GE3

SUP60N06-12P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB • Synchronous Rectifier • Power Supplies D G G D S Top View S Ordering Information: SUP60N06-12P-E3 (Lead (Pb)-free) SUP60N06-12P-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 °Cc Operating Junction and Storage Temperature Range ID V 60d 54d IDM 80 IAS 40 EAS 80 PD Unit 100b 3.25 A mJ W TJ, Tstg - 55 to 150 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 1.25 °C/W Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 69070 S10-1475-Rev. C, 05-Jul-10 www.vishay.com 1 SUP60N06-12P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VDS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V ± 250 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) 4.5 VDS = 60 V, VGS = 0 V, TJ = 150 °C Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 10 V, VGS = 10 V V nA µA 250 80 A VGS = 10 V, ID = 30 A 0.0098 0.012 VGS = 10 V, ID = 30 A, TJ = 125 °C 0.0155 0.019 VDS = 15 V, ID = 15 A 37  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg c td(on) Turn-Off Delay Timec td(off) Turn-On Delay Time Rise Timec Fall Timec tr 1970 VGS = 0 V, VDS = 30 V, f = 1 MHz pF 310 110 33 VDS = 30 V, VGS = 10 V, ID = 20 A 55 nC 11 9 f = 1 MHz VDD = 30 V, RL = 1.53  ID  20 A, VGEN = 10 V, Rg = 1  tf 0.3 1.4 2.8 11 20 11 20 16 30 8 15  ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 60 Pulsed Current ISM 80 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 10 A, VGS = 0 V 0.84 IF = 10 A, dI/dt = 100 A/µs 64 trr IRM(REC) Qrr A 1.5 V 40 80 ns 3.2 5.0 A 120 nC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69070 S10-1475-Rev. C, 05-Jul-10 SUP60N06-12P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 10 VGS =10 V thru 8 V 8 I D - Drain Current (A) I D - Drain Current (A) 60 VGS = 7 V 40 20 VGS = 6 V 6 4 TC = 25 °C 2 TC = 125 °C 0 0.0 0 0.5 1.0 1.5 2.0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.020 0.05 R DS(on) - On-Resistance (Ω) R DS(on) - On-Resistance (Ω) TC = - 55 °C 0.015 VGS = 10 V 0.010 0.005 0.04 0.03 0.02 TJ = 125 °C 0.01 TJ = 25 °C 0.000 0.00 0 20 40 60 80 4 6 ID - Drain Current (A) 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current On-resistance vs. Gate-to-Source Voltage 10 2800 Ciss 2100 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) ID = 20 A 1400 700 Coss Crss 0 0 8 VDS = 15 V VDS = 30 V 6 VDS = 45 V 4 2 0 15 30 45 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 69070 S10-1475-Rev. C, 05-Jul-10 60 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUP60N06-12P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.0 ID = 15 A I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 1.4 VGS = 10 V 1.1 TJ = 25 °C 1 0.1 0.8 TJ = - 50 °C 0.01 0.5 - 50 - 25 0 25 50 75 100 125 0.001 0.0 150 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.2 0.8 74 ID = 1 mA 0.4 VGS(th) Variance (V) BVDSS (normalized) TJ = 150 °C 10 1.7 70 66 0.0 - 0.4 ID = 1 mA - 0.8 ID = 250 µA - 1.2 62 - 50 - 25 0 25 50 75 100 125 - 1.6 - 50 150 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) TJ - Temperature (°C) Threshold Voltage Drain-Source Breakdown vs. Junction Temperature 75 I D - Drain Current (A) 60 Package Limited 45 30 15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Maximum Drain Current vs. Case Temperature www.vishay.com 4 Document Number: 69070 S10-1475-Rev. C, 05-Jul-10 SUP60N06-12P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69070. Document Number: 69070 S10-1475-Rev. C, 05-Jul-10 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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