V30200C, VF30200C, VB30200C, VI30200C
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Vishay General Semiconductor
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.526 V at IF = 5A
TO-220AB
FEATURES
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
2
V30200C
3
VF30200C
1
2
1
PIN 1
PIN 2
PIN 1
PIN 2
PIN 3
K
PIN 3
K
D2PAK (TO-263AB)
K
3
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA
package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-262AA
K
TYPICAL APPLICATIONS
2
1
VB30200C
PIN 1
VI30200C
K
PIN 2
HEATSINK
1
2
PIN 1
PIN 2
PIN 3
K
3
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
LINKS TO ADDITIONAL RESOURCES
3D 3D
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
3D Models
PRIMARY CHARACTERISTICS
per
Polarity: as marked
IF(AV)
2 x 15 A
VRRM
200 V
IFSM
250 A
VF at IF = 15 A
0.648 V
Mounting Torque: 10 in-lbs maximum
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configurations
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30200C VF30200C VB30200C VI30200C UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
VRRM
per device
per diode
IF(AV)
200
30
15
V
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
250
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
EAS
200
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
per diode
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
VAC
1500
V
TJ, TSTG
-40 to +150
°C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
Revision: 01-Jul-2022
Document Number: 89014
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IR = 10 mA
Breakdown voltage
TA = 25 °C
SYMBOL
TYP.
MAX.
VBR
205 min.
-
0.691
-
0.770
-
0.841
1.10
0.526
-
IF = 5 A
IF = 10 A
TA = 25 °C
IF = 15 A
Instantaneous forward voltage
per diode (1)
VF
IF = 5 A
TA = 125 °C
IF = 10 A
Reverse current per diode (2)
-
0.648
0.72
TA = 25 °C
2.4
-
μA
TA = 125 °C
3.8
-
mA
5.3
160
μA
6.0
12
mA
TA = 25 °C
VR = 200 V
V
0.594
IF = 15 A
VR = 180 V
UNIT
IR
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
V30200C
VF30200C
VB30200C
VI30200C
UNIT
RθJC
2.0
5.5
2.0
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
V30200C-E3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
2.248
4W
50/tube
Tube
ITO-220AB
VF30200C-E3/4W
1.75
4W
50/tube
Tube
TO-263AB
VB30200C-E3/4W
1.39
4W
50/tube
Tube
TO-263AB
VB30200C-E3/8W
1.39
8W
800/reel
Tape and reel
TO-262AA
VI30200C-E3/4W
1.46
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
14
40
D = 0.5
30
V(B,I)30200C
VF30200C
20
10
D = 0.2
10
D = 1.0
D = 0.1
8
6
T
4
2
0
D = 0.8
D = 0.3
12
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
D = tp/T
tp
0
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
16
18
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 01-Jul-2022
Document Number: 89014
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30200C, VF30200C, VB30200C, VI30200C
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Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
TA = 125 °C
10
TA = 25 °C
1
0.2
0.4
0.6
0.8
1.0
Junction to Case
1
V(B,I)30200C
0.1
0.01
1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 150 °C
10
TA = 125 °C
1
0.1
0.01
0.001
0.0001
10
TA = 25 °C
20
30
40
50
60
70
80
90
100
Junction to Case
VF30200C
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
Junction Capacitance (pF)
10 000
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 01-Jul-2022
Document Number: 89014
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30200C, VF30200C, VB30200C, VI30200C
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
PIN
1 2 3
0.635 (16.13)
0.625 (15.87)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 01-Jul-2022
Document Number: 89014
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30200C, VF30200C, VB30200C, VI30200C
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.401 (10.19)
0.381 (9.68)
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 01-Jul-2022
Document Number: 89014
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000