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V30200C

V30200C

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    V30200C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A...

  • 数据手册
  • 价格&库存
V30200C 数据手册
New Product V30200C, VB30200C & VI30200C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.526 V at IF = 5 A TMBS® TO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance 2 3 1 PIN 2 CASE V30200C PIN 1 PIN 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and TO-262AA package) TO-263AB K K TO-262AA • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS 2 1 1 VB30200C PIN 1 PIN 2 K HEATSINK 2 3 For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, TO-263AB and TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum VI30200C PIN 1 PIN 3 PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 200 V 250 A 0.648 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM EAS IRRM dV/dt TJ, TSTG V30200C VB30200C 200 30 15 250 100 1.0 10 000 - 40 to + 150 VI30200C UNIT V A A mJ A V/µs °C Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C Peak repetitive reverse current at tp = 2 µs, 1 kHz per diode Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number: 89014 Revision: 31-Jul-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product V30200C, VB30200C & VI30200C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 10 mA IF = 5 A IF = 1 0 A IF = 1 5 A IF = 5 A IF = 1 0 A IF = 1 5 A VR = 180 V Reverse current per diode (2) VR = 200 V Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TJ = 25 °C TJ = 25 °C VF TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C SYMBOL VBR TYP. 205 (minimum) 0.691 0.770 0.841 0.526 0.594 0.648 2.4 3.8 IR 5.3 6.0 MAX. 1.10 V 0.72 160 12 µA mA µA mA UNIT V Instantaneous forward voltage per diode (1) THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC V30200C VB30200C 2.0 VI30200C UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N V30200C-E3/4W VB30200C-E3/4W VB30200C-E3/8W VI30200C-E3/4W UNIT WEIGHT (g) 2.248 1.39 1.39 1.46 PACKAGE CODE 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tape and reel Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 40 Resistive or Inductive Load 14 D = 0.5 12 D = 0.3 D = 0.2 10 D = 0.1 8 6 T 4 2 0 0 25 50 75 100 125 150 175 0 0 2 4 6 8 10 12 14 16 18 D = tp/T tp D = 1.0 D = 0.8 Average Forward Current (A) 30 20 10 Case Temperature (°C) Average Power Loss (W) Average Forward Current (A) Figure 1. Forward Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89014 Revision: 31-Jul-08 New Product V30200C, VB30200C & VI30200C Vishay General Semiconductor 100 10 000 Instantaneous Forward Current (A) Junction Capacitance (pF) 1.0 1.2 TA = 150 °C TA = 125 °C 10 1000 100 TA = 25 °C 0.1 0.2 10 0.4 0.6 0.8 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Junction to Case 10 TA = 150 °C 1 TA = 125 °C 0.1 1 0.01 TA = 25 °C 0.001 V(B,I)30200C 0.1 0.01 0.1 1 10 100 0.0001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 89014 Revision: 31-Jul-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product V30200C, VB30200C & VI30200C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 TO-262AA 0.411 (10.45) MAX. 0.250 (6.35) MIN. K 0.055 (1.40) 0.047 (1.19) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 30° (TYP.) (REF.) 0.950 (24.13) 0.920 (23.37) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) PIN 2 0.510 (12.95) 0.470 (11.94) 3 0.350 (8.89) 0.330 (8.38) 0.401 (10.19) 0.381 (9.68) 0.110 (2.79) 0.100 (2.54) PIN 1 PIN 3 PIN 2 HEATSINK 0.560 (14.22) 0.530 (13.46) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89014 Revision: 31-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
V30200C 价格&库存

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V30200C-E3/4W
  •  国内价格
  • 1+17.45425
  • 10+16.01175
  • 30+15.72325

库存:90