V60120C-E3/4W

V60120C, VB60120C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS ® TO-220AB D2PAK (TO-263AB) • Trench MOS Schottky technology • Low forward voltage drop, low power losses K • High efficiency operation • Low thermal resistance 2 2 1 3 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB package) 1 V60120C VB60120C PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 K HEATSINK TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS click logo to get started Models For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. Available MECHANICAL DATA Case: TO-220AB and D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 120 V IFSM 300 A Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test VF at IF = 30 A 0.71 V TJ max. 150 °C Package TO-220AB, D2PAK (TO-263AB) Circuit configuration Common cathode per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM per device per diode IF(AV) V60120C VB60120C 120 60 30 UNIT V A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 300 A Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH  per diode EAS 260 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz,  TJ = 38 °C ± 2 °C per diode IRRM 0.5 A dV/dt 10 000 V/μs TJ, TSTG -40 to +150 °C Voltage rate of change (rated VR) Operating junction and storage temperature range Revision: 19-Jun-2018 Document Number: 88976 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60120C, VB60120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA SYMBOL TYP. MAX. UNIT VBR 120 (minimum) - V 0.48 - TA = 25 °C IF = 5 A IF = 15 A Instantaneous forward voltage per diode TA = 25 °C IF = 30 A VF (1) IF = 5 A IF = 15 A TA = 125 °C Reverse current at rated VR per diode VR = 120 V 0.95 0.41 - V 0.58 - 0.71 0.75 TA = 25 °C 14 - μA TA = 125 °C 11 - mA 40 500 μA 15 45 mA IF = 30 A VR = 90 V 0.66 0.88 IR (2) TA = 25 °C TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V60120C VB60120C UNIT RJC 2.2 2.2 °C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-220AB V60120C-E3/4W PREFERRED P/N 1.89 4W 50/tube DELIVERY MODE Tube TO-263AB VB60120C-E3/4W 1.38 4W 50/tube Tube TO-263AB VB60120C-E3/8W 1.38 8W 800/reel Tape and reel  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 30 70 D = 0.8 D = 0.5 60 25 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load 50 40 30 20 D = 0.3 20 D = 0.2 D = 1.0 D = 0.1 15 T 10 5 10 D = tp/T 0 tp 0 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 19-Jun-2018 Document Number: 88976 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60120C, VB60120C www.vishay.com Vishay General Semiconductor 10 000 300 250 200 150 100 1000 50 0 100 1 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 6 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = TJ max. 8.3 ms Single Half Sine-Wave Junction Capacitance (pF) Peak Forward Surge Current (A) 350 TA = 150 °C TA = 125 °C 10 TA = 25 °C 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Junction to Case 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode Fig. 7 - Typical Transient Thermal Impedance Per Diode Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C 1 0.1 TA = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Characteristics Per Diode Revision: 19-Jun-2018 Document Number: 88976 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60120C, VB60120C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.022 (0.56) 0.014 (0.36) Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 19-Jun-2018 Document Number: 88976 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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