VEMD6160X01

VEMD6160X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: 1206 • Dimensions (L x W x H in mm): 4 x 2 x 1.05 • Radiant sensitive area (in mm2): 0.85 • Daylight blocking filter • High photo sensitivity • High radiant sensitivity • Excellent Ira linearity • Fast response times • Angle of half sensitivity: ϕ = ± 70° • Floor life: 72 h, MSL 4, according to J-STD-020 • Lead (Pb)-free reflow soldering DESCRIPTION • AEC-Q101 qualified VEMD6160X01 is a high speed and high sensitive PIN photodiode with excellent Ira linearity. It is a small surface mount device (SMD) including the chip with a 0.85 mm2 sensitive area and a daylight blocking filter. • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed photo detector • Small signal detection • Proximity sensors PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm) VEMD6160X01 5 ± 70 700 to 1070 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD6160X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 1206 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction / ambient Rev. 1.0, 14-Jan-16 SYMBOL VALUE VR 20 UNIT V PV 215 mW Tj 110 °C Tamb -40 to +110 °C Tstg -40 to +110 °C According to reflow solder profile fig. 8 Tsd 260 °C According to EIA / JESD51 RthJA 270 K/W Document Number: 84306 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD6160X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 50 mA VF - 0.85 1.1 V IR = 100 μA, E = 0 V(BR) 20 - - V nA Forward voltage Breakdown voltage VR = 10 V, E = 0 Iro - 0.03 5 VR = 0 V, f = 1 MHz, E = 0 CD - 11 - pF VR = 5 V, f = 1 MHz, E = 0 CD - 4.6 - pF Reverse dark current Diode capacitance UNIT Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo - 360 - mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - -3.1 - mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik - 5 - μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 835 nm TKIk - 0.1 - %/K Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 3.5 5 6.5 μA Ee = 1 mW/cm2, λ = 890 nm, VR = 5 V Ira - 7 - μA deg Reverse light current Angle of half sensitivity ϕ - ± 70 - Wavelength of peak sensitivity λp - 840 - nm Range of spectral bandwidth λ0.1 - 700 to 1070 - nm Rise time VR = 10 V, RL = 50 Ω, λ = 830 nm tr - 60 - ns Fall time VR = 10 V, RL = 50 Ω, λ = 830 nm tf - 50 - ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 Ira - Reverse Light Current (μA) Iro - Reverse Dark Current (nA) 100 VR = 10 V 10 1 0.1 0.01 -20 0 20 40 60 80 10 1 0.1 0.01 0.01 0.001 -40 VR = 5 V, λ = 950 nm 100 Ee - Irradiance Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature 100 865 nm 1.0 835 nm 0.8 Ira - Reverse Light Current (μA) Ira rel - Relative Reverse Light Current 940 nm 1.2 1 10 (mW/cm2) Fig. 3 - Reverse Light Current vs. Irradiance 1.4 VR = 5 V 0.1 λ = 950 nm 10 mW/cm2 5.0 mW/cm2 2.0 mW/cm2 10 1.0 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 1 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 0.1 0.01 mW/cm2 0.01 0.6 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.0, 14-Jan-16 0.1 1 10 100 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Document Number: 84306 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD6160X01 www.vishay.com Vishay Semiconductors 0° 10° f = 1 MHz, E = 0 CD - Capacitance (pF) 10 8 6 4 2 0 0.001 0.01 0.1 1 10 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 100 80° 0.6 0.4 0.2 ϕ - Angular Displacement Srel - Relative Radiant Sensitivity 12 0 VR - Reverse Voltage (V) S(λ)rel - Relative Spectral Sensitivity Fig. 5 - Diode Capacitance vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 1.0 0.8 0.6 0.4 0.2 0 400 500 600 700 800 900 1000 1100 λ - Wavelength (nm) Fig. 6 - Relative Spectral Sensitivity vs. Wavelength REFLOW SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 max. 30 s Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: max. 100 s Floor life: 72 h 150 max. 120 s 100 max. ramp down 6 °C/s 50 0 19841 50 100 150 200 250 300 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 Rev. 1.0, 14-Jan-16 Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 4, according to J-STD-020. max. ramp up 3 °C/s 0 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 84306 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD6160X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 2.4 ± 0.15 2 ± 0.15 0.45 1.05 ± 0.15 ° 97 0.745 0.745 Anode 1 4 ± 0.15 0.97 0.19 0.81 (1) 0.81 Cathode 2 ± 0.15 Optical center Recommended solder pad footprint 0.88 0.12 1.02 0.88 Device center 2.46 4.64 Drawing-No. 6.541-5100.01-4 Preliminary issue 04.07.2013 Rev. 1.0, 14-Jan-16 Technical drawings according to DIN specification. Not indicated tolerances ± 0.1mm Document Number: 84306 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD6160X01 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters Rev. 1.0, 14-Jan-16 Document Number: 84306 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD6160X01 www.vishay.com Vishay Semiconductors REEL DIMENSIONS in millimeters 20874 Rev. 1.0, 14-Jan-16 Document Number: 84306 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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