VEMT3700F-GS08

VEMT3700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • • • • • • • • • • • • 19032 DESCRIPTION VEMT3700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950 nm IR emitters. Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 High radiant sensitivity Fast response times Daylight blocking filter matched with 870 nm to 950 nm emitters Angle of half sensitivity: ϕ = ± 60° Package notch indicates collector Package matched with IR emitter series VSML3710 Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • • • • • Photo interrupters Miniature switches Counters Encoders Position sensors PRODUCT SUMMARY COMPONENT VEMT3700F Ica (mA) ϕ (deg) λ0.5 (nm) 0.5 ± 60 870 to 1050 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT3700F-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 VEMT3700F-GS18 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 5 V Collector current UNIT IC 50 mA ICM 100 mA Power dissipation PV 100 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Tsd 260 °C RthJA 400 K/W Collector peak current Soldering temperature tp/T ≤ 0.1, tp ≤ 10 μs Acc. reflow solder profile fig. 10 Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81584 Rev. 1.6, 14-Jul-10 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 1 VEMT3700F Silicon NPN Phototransistor Vishay Semiconductors PV - Power Dissipation Limit (mW) 125 R thJA = 400 K/W 100 75 50 25 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 20376 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 70 TYP. MAX. UNIT VCE = 20 V, E = 0 ICEO 1 200 nA VCE = 5 V, f = 1 MHz, E = 0 CCEO 3 pF Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Ica 0.5 mA Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Collector ligth current V 0.25 Angle of half sensitivity ϕ ± 60 deg Wavelength of peak sensitivity λp 940 nm λ0.5 870 to 1050 nm Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VCEsat 0.15 VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 1 kΩ tr/tf 6 μs VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 100 Ω tr/tf 2 μs VS = 5 V, IC = 2 mA, RL = 100 Ω fc 180 kHz Range of spectral bandwidth Collector emitter saturation voltage Rise time, fall time Cut-off frequency 0.3 V BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 103 VCE = 20 V 102 101 10 20 94 8304 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature www.vishay.com 2 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 0 94 8239 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Relative Collector Current vs. Ambient Temperature For technical questions, contact: detectortechsupport@vishay.com Document Number: 81584 Rev. 1.6, 14-Jul-10 VEMT3700F Silicon NPN Phototransistor 8 ton/toff - Turn-on/Turn-off Time (µs) 1 0.1 VCE = 5 V λ = 950 nm 0.01 0.001 0.01 1 ton Ee = 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 0.1 1 10 2 4 100 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage 8 10 12 14 IC - Collector Current (mA) 1.2 1.0 0.8 0.6 0.4 0.2 0 750 850 950 1150 1050 λ - Wavelength (nm) 94 8408 VCE - Collector Emitter Voltage (V) 6 Fig. 7 - Turn-on/Turn-off Time vs. Collector Current S (λ)rel - Relative Spectral Sensitivity λ = 950 nm 1 0 94 8293 10 Ica - Collector Light Current (mA) toff 2 10 Fig. 4 - Collector Light Current vs. Irradiance 94 8317 4 0 0.1 Ee - Irradiance (mW/cm²) 94 8316 VCE = 5 V RL = 100 Ω λ = 950 nm 6 Fig. 8 - Relative Spectral Sensitivity vs. Wavelength 0° 10 10° 20° 30° f = 1 MHz Srel - Relative Sensitivity 8 6 4 2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ica - Collector Light Current (mA) 10 CCEO - Collector Emitter Capacitance (pF) Vishay Semiconductors 80° 0 0.1 94 8294 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage Document Number: 81584 Rev. 1.6, 14-Jul-10 0.6 0.4 0.2 0 94 8318 Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 3 VEMT3700F Silicon NPN Phototransistor Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Mounting Pad Layout 1.2 4 2.6 (2.8) area covered with solder resist 4 1.6 (1.9) 20873 SOLDER PROFILE DRYPACK 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C FLOOR LIFE 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. DRYING 0 0 19841 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 50 100 150 200 250 300 Time (s) Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. www.vishay.com 4 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81584 Rev. 1.6, 14-Jul-10 VEMT3700F Silicon NPN Phototransistor Vishay Semiconductors 4.5 3.5 Blister tape Component cavity 94 8670 3.5 3.1 Identification Label: Vishay type group tape code production code quantity 2.2 2.0 63.5 60.5 4.1 3.9 94 8665 4.0 3.6 8.3 7.7 10.4 8.4 120° 1.85 1.65 4.1 3.9 14.4 max. 180 178 Fig. 14 - Dimensions of Reel-GS08 5.75 5.25 3.6 3.4 13.00 12.75 2.5 1.5 Fig. 11 - Blister Tape 1.6 1.4 10.0 9.0 120° Adhesive tape 4.5 3.5 0.25 13.00 12.75 2.5 1.5 2.05 1.95 94 8668 Fig. 12 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. Identification Label: Vishay type group tape code production code quantity 62.5 60.0 321 329 14.4 max. 18857 Fig. 15 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE De-reeling direction 94 8158 The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 13 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Document Number: 81584 Rev. 1.6, 14-Jul-10 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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