V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
2
3
1
V30120S
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
D2PAK
(TO-263AB)
2
1
VF30120S
3
PIN 2
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-262AA
K
TYPICAL APPLICATIONS
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
A
NC
VB30120S
NC
VI30120S
K
HEATSINK
A
1
DESIGN SUPPORT TOOLS
PIN 1
PIN 2
PIN 3
K
2
3
click logo to get started
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Models
Available
per
Polarity: as marked
PRIMARY CHARACTERISTICS
Mounting Torque: 10 in-lbs maximum
IF(AV)
30 A
VRRM
120 V
IFSM
300 A
VF at IF = 30 A
0.74 V
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120S
VF30120S VB30120S
VI30120S
UNIT
Maximum repetitive peak reverse voltage
VRRM
120
V
Maximum average forward rectified current (fig. 1)
IF(AV)
30
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
300
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH
EAS
180
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
VAC
1500
V
TJ, TSTG
-40 to +150
°C
Revision: 18-Jun-2018
Document Number: 88974
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 15 A
Instantaneous forward voltage per diode
(1)
TA = 25 °C
IF = 30 A
VF
IF = 5 A
IF = 15 A
TA = 125 °C
IF = 30 A
VR = 90 V
Reverse current per diode (2)
VR = 120 V
TYP.
MAX.
0.50
-
0.70
-
0.99
1.10
0.43
-
0.60
-
0.74
0.82
UNIT
V
TA = 25 °C
18
-
μA
TA = 125 °C
12
-
mA
-
500
μA
22
35
mA
IR
TA = 25 °C
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120S
VF30120S
VB30120S
VI30120S
UNIT
RJC
1.6
4.0
1.6
1.6
°C/W
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V30120S-E3/4W
PREFERRED P/N
1.88
4W
50/tube
Tube
ITO-220AB
VF30120S-E3/4W
1.75
4W
50/tube
Tube
TO-263AB
VB30120S-E3/4W
1.39
4W
50/tube
Tube
TO-263AB
VB30120S-E3/8W
1.39
8W
800/reel
Tape and reel
TO-262AA
VI30120S-E3/4W
1.46
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
30
Resistive or Inductive Load
D = 0.5
35
V(B,I)30120S
Average Power Loss (W)
Average Forward Rectified Current (A)
40
30
25
VF30120S
20
15
10
D = 0.3
20
D = 0.2
D = 1.0
15
D = 0.1
T
10
5
5
D = 0.8
25
D = tp/T
tp
Mounted on Specific Heatsink
0
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 18-Jun-2018
Document Number: 88974
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.2
0.4
0.6
0.8
1.0
1.2
1
V(B,I)30120S
0.1
0.01
0.1
0
Junction to Case
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
TA = 25 °C
0.01
0.001
10
20
30
40
50
60
70
80
90
100
Junction to Case
1
VF30120S
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 18-Jun-2018
Document Number: 88974
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 18-Jun-2018
Document Number: 88974
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 18-Jun-2018
Document Number: 88974
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000