VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3
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Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
Base
cathode
+
2
• Glass passivated pellet chip junction
• Meets MSL level 1, per
LF maximum peak of 245 °C
• Designed and qualified
JEDEC®-JESD 47
2
1
3
D2PAK (TO-263AB)
1
Anode -
J-STD-020,
according
to
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
- Anode
APPLICATIONS
• Output rectification and
choppers and converters
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VR
200 V, 400 V, 600 V
freewheeling
• Input rectifications where severe
conducted EMI should be met
in
inverters,
restrictions
on
VF at IF
1.2 V
IFSM
140 A
DESCRIPTION
trr
50 ns
TJ max.
150 °C
The VS-10ETF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
Snap factor
0.6
Package
D2PAK (TO-263AB)
Circuit configuration
Single
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
VALUES
UNITS
200 to 600
V
Sinusoidal waveform
10
A
140
IFSM
trr
1 A, 100 A/μs
50
ns
VF
10 A, TJ = 25 °C
1.2
V
TJ
Range
-40 to +150
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-10ETF02S-M3
200
300
VS-10ETF04S-M3
400
500
VS-10ETF06S-M3
600
700
VOLTAGE RATINGS
PART NUMBER
2.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
TC = 128 °C, 180° conduction half sine wave
10
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
10 ms sine pulse, rated VRRM applied
115
10 ms sine pulse, no voltage reapplied
140
10 ms sine pulse, rated VRRM applied
66
10 ms sine pulse, no voltage reapplied
94
t = 0.1 ms to 10 ms, no voltage reapplied
940
UNITS
A
A2s
A2√s
Revision: 16-Dec-2021
Document Number: 94884
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
VFM
rt
VF(TO)
IRM
TEST CONDITIONS
VALUES
10 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
VR = rated VRRM
TJ = 150 °C
UNITS
1.2
V
12.7
mΩ
1.25
V
0.1
mA
2.5
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
TEST CONDITIONS
IF at 10 Apk
25 A/μs
25 °C
S
VALUES
UNITS
200
ns
2.75
A
0.32
μC
IFM
trr
t
dir
dt
0.6
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance
junction to case
Maximum thermal resistance
junction to ambient (PCB mount)
SYMBOL
TEST CONDITIONS
TJ, TStg
RthJC
DC operation
VALUES
UNITS
-40 to +150
°C
1.5
°C/W
RthJA (1)
40
Approximate weight
2
g
0.07
oz.
10ETF02S
Marking device
Case style D2PAK (TO-263AB)
10ETF04S
10ETF06S
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 16-Dec-2021
Document Number: 94884
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3
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Vishay Semiconductors
20
10ETF..S Series
RthJC (DC) = 1.5 °C/W
145
140
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
Ø
Conduction angle
135
130
120°
125
30°
60°
90°
6
8
16
120°
180°
DC
30°
RMS limit
12
8
Ø
4
Conduction period
0
0
2
4
10
12
4
0
12
8
16
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
130
10ETF..S Series
RthJC (DC) = 1.5 °C/W
140
Ø
Conduction period
135
130
DC
60°
125
30°
120°
90°
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
120
Peak Half Sine Wave
Forward Current (A)
145
110
100
90
80
70
60
50
VS-10ETF..S Series
40
180°
30
120
0
2
4
8
6
10
12
14
16
1
10
100
Average Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
150
16
120°
14
90°
130
60°
12
180°
30°
10
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
90°
60°
180°
120
Maximum Allowable Case
Temperature (°C)
10ETF..S Series
TJ = 150 °C
RMS limit
8
6
Ø
4
Conduction angle
2
10ETF..S Series
TJ = 150 °C
2
4
6
8
90
70
50
30
0
0
110
10
Maximum non-repetitive surge current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
10
0.01
VS-10ETF..S Series
0.1
1
10
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 16-Dec-2021
Document Number: 94884
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3
Vishay Semiconductors
100
1.4
10ETF..S Series
TJ = 25 °C
10ETF..S Series
1.2
Qrr - Typiacl Reverse
Recovery Charge (µC)
Instantaneous Forward Current (A)
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TJ = 150 °C
TJ = 25 °C
10
1.0
IFM = 10 A
0.8
0.6
IFM = 5 A
0.4
IFM = 2 A
0.2
IFM = 1 A
1
0.5
0
1.0
1.5
2.0
2.5
0
3.0
40
80
120
160
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
2.5
10ETF..S Series
TJ = 150 °C
0.30
Qrr - Typiacl Reverse
Recovery Charge (µC)
10ETF..S Series
TJ = 25 °C
IFM = 20 A
IFM = 10 A
IFM = 8 A
0.20
IFM = 5 A
0.10
IFM = 2 A
IFM = 20 A
2.0
IFM = 10 A
1.5
IFM = 5 A
1.0
IFM = 2 A
0.5
IFM = 1 A
IFM = 1 A
0
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.4
15
10ETF..S Series
TJ = 25 °C
Irr - Typiacl Reverse
Recovery Current (A)
10ETF..S Series
TJ = 150 °C
trr - Typiacl Reverse
Recovery Time (µs)
200
Instantaneous Forward Voltage (V)
0.40
trr - Typiacl Reverse
Recovery Time (µs)
IFM = 20 A
0.3
IFM = 20 A
0.2
IFM = 10 A
IFM = 5 A
0.1
IFM = 2 A
IFM = 20 A
12
IFM = 10 A
IFM = 5 A
9
IFM = 2 A
6
IFM = 1 A
3
IFM = 1 A
0
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Revision: 16-Dec-2021
Document Number: 94884
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3
www.vishay.com
Vishay Semiconductors
20
Irr - Typiacl Reverse
Recovery Current (A)
10ETF..S Series
TJ = 150 °C
IFM = 20 A
16
IFM = 10 A
12
IFM = 5 A
IFM = 2 A
8
IFM = 1 A
4
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance (°C/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
1
Steady state value
(DC operation)
0.1
0.01
Single pulse
0.001
0.001
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
10ETF..S Series
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 16-Dec-2021
Document Number: 94884
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
E
T
F
06
S
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (10 = 10 A)
3
-
Circuit configuration:
TRL -M3
8
9
E = single
4
-
Package:
T = D2PAK (TO-263AB)
5
-
Type of silicon:
6
-
Voltage code x 100 = VRRM
7
-
S = surface mountable
8
-
F = fast soft recovery rectifier
02 = 200 V
04 = 400 V
06 = 600 V
None = tube
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
9
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
BASE QUANTITY
PACKAGING DESCRIPTION
VS-10ETF02S-M3
50
Antistatic plastic tubes
VS-10ETF02STRR-M3
800
13" diameter reel
VS-10ETF02STRL-M3
800
13" diameter reel
VS-10ETF04S-M3
50
Antistatic plastic tubes
VS-10ETF04STRR-M3
800
13" diameter reel
VS-10ETF04STRL-M3
800
13" diameter reel
VS-10ETF06S-M3
50
Antistatic plastic tubes
VS-10ETF06STRR-M3
800
13" diameter reel
VS-10ETF06STRL-M3
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96424
Revision: 16-Dec-2021
Document Number: 94884
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
C
2xb
2.64 (0.103)
2.41 (0.096)
(3)
E1
c
View A - A
± 0.004 M B
0.010 M A M B
2x e
Plating
Base
Metal
(4)
b1, b3
H
Gauge
plane
L
Seating
plane
L3
A1
Lead tip
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
0.110
L
1.78
2.79
0.070
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
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Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
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