VS-10ETF10-M3

VS-10ETF1...-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode 2 2 • Glass passivated pellet chip junction • 150 °C max operating junction temperature • Low forward voltage drop and short reverse recovery time 1 1 Cathode 3 • Designed and qualified JEDEC®-JESD 47 3 Anode TO-220AC 2L according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS APPLICATIONS IF(AV) 10 A VR 1000 V, 1200 V VF at IF 1.33 V IFSM 140 A trr 80 ns TJ max. 150 °C Snap factor 0.6 Package TO-220AC 2L Circuit configuration Single These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION The VS-10ETF1... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) VALUES UNITS 1000 to 1200 V Sinusoidal waveform 10 A 140 IFSM trr 1 A, 100 A/μs VF 10 A, TJ = 25 °C 80 TJ ns 1.33 V -40 to +150 °C IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-10ETF10-M3 1000 1100 VS-10ETF12-M3 1200 1200 4 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL TEST CONDITIONS IF(AV) TC = 125 °C, 180° conduction half sine wave 10 10 ms sine pulse, rated VRRM applied 115 10 ms sine pulse, no voltage reapplied 140 10 ms sine pulse, rated VRRM applied 66 10 ms sine pulse, no voltage reapplied 94 t = 0.1 to 10 ms, no voltage reapplied 940 IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t VALUES UNITS A A2s A2√s Revision: 29-Nov-2021 Document Number: 96211 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF1...-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 1.33 V 22.9 mΩ 0.96 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS mA 4 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Typical snap factor TEST CONDITIONS IF at 10 Apk 25 A/μs 25 °C S VALUES UNITS 310 ns 4.7 A 1.05 μC IFM trr t dir dt 0.6 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance junction to case RthJC Maximum thermal resistance junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device UNITS -40 to +150 °C 1.5 °C/W 62 Mounting surface, smooth and greased 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-220AC 2L (JEDEC) 10ETF10 10ETF12 Revision: 29-Nov-2021 Document Number: 96211 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF1...-M3 Series www.vishay.com Vishay Semiconductors 24 10ETF.. Series RthJC(DC) = 1.5 °C/W 145 140 Ø Conduction angle 135 130 30° 60° 125 90° 120° 120 180° Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 115 2 4 6 8 10 16 12 RMS limit 8 Ø Conduction period 4 12 10ETF.. Series TJ = 150 °C 0 2 4 6 8 10 12 14 16 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 130 150 10ETF.. Series RthJC(DC) = 1.5 °C/W 145 140 Ø Conduction period 135 130 30° 60° 125 90° 120° 120 180° At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 120 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 20 0 0 110 100 90 80 70 60 50 VS-10ETF.. Series 40 DC 30 115 0 2 4 6 8 10 12 14 1 16 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 140 16 180° 120° 90° 60° 30° 14 12 120 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 10 RMS limit 8 Ø 6 Conduction angle 4 10ETF.. Series TJ = 150 °C 2 2 4 6 8 80 60 40 20 0 0 100 10 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 0 0.01 VS-10ETF.. Series 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 29-Nov-2021 Document Number: 96211 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF1...-M3 Series Vishay Semiconductors 1000 2.0 10ETF.. Series TJ = 25 °C TJ = 150 °C TJ = 25 °C Qrr - Typical Reverse Recovery Charge (µC) Instantaneous Forward Current (A) www.vishay.com 100 10 1 0.5 IFM = 8 A 1.2 IFM = 5 A 0.8 IFM = 2 A 0.4 IFM = 1 A 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4.5 40 80 120 160 200 Instantaneous Forward Voltage (V) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 5 10ETF.. Series TJ = 150 °C Qrr - Typical Reverse Recovery Charge (µC) 10ETF.. Series TJ = 25 °C 0.5 trr - Typical Reverse Recovery Time (µs) 1.6 10ETF.. Series 0.6 IFM = 1 A IFM = 2 A IFM = 5 A IFM = 8 A IFM = 10 A 0.4 0.3 0.2 0.1 IFM = 10 A 4 IFM = 8 A 3 IFM = 5 A 2 IFM = 2 A 1 IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.8 20 10ETF.. Series TJ = 25 °C 0.6 Irr - Typical Reverse Recovery Current (A) 10ETF.. Series TJ = 150 °C trr - Typical Reverse Recovery Time (µs) IFM = 10 A IFM = 1 A IFM = 2 A IFM = 5 A IFM = 8 A IFM = 10 A 0.4 0.2 0 IFM = 10 A 16 IFM = 8 A 12 IFM = 5 A 8 IFM = 2 A IFM = 1 A 4 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Revision: 29-Nov-2021 Document Number: 96211 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF1...-M3 Series www.vishay.com Vishay Semiconductors 25 Irr - Typical Reverse Recovery Current (A) 10ETF.. Series TJ = 150 °C IFM = 10 A 20 IFM = 8 A 15 IFM = 5 A IFM = 2 A 10 IFM = 1 A 5 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) ZthJC - Transient Thermal Impedance (°C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 10 Steady state value (DC operation) 1 0.1 0.01 0.001 0.001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.1 10ETF.. Series 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 29-Nov-2021 Document Number: 96211 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF1...-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 E T F 12 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (10 = 10 A) 3 - Circuit configuration: E = single 4 - 5 - Package: T = 2L TO-220AC Type of silicon: F = fast soft recovery rectifier 6 - 7 - Voltage code x 100 = VRRM 10 = 1000 V 12 = 1200 V Environmental digit -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-10ETF10-M3 50 Antistatic plastic tube VS-10ETF12-M3 50 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 Revision: 29-Nov-2021 Document Number: 96211 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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