VS-10ETF06-M3

VS-10ETF0...-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode 2 2 • Glass passivated pellet chip junction • 150 °C max operating junction temperature • Low forward voltage drop and short reverse recovery time 1 1 Cathode 3 • Designed and qualified JEDEC®-JESD 47 3 Anode TO-220AC 2L according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS APPLICATIONS IF(AV) 10 A VR 200 V, 400 V, 600 V VF at IF 1.2 V IFSM 130 A trr 50 ns TJ max. 150 °C Snap factor 0.6 Package TO-220AC 2L Circuit configuration Single These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION The VS-10ETF0... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) VALUES UNITS 200 to 600 V Sinusoidal waveform 10 A 130 IFSM trr 1 A, 100 A/μs 50 VF 10 A, TJ = 25 °C 1.2 V -40 to +150 °C IRRM AT 150 °C mA TJ ns VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-10ETF02-M3 200 300 VS-10ETF04-M3 400 500 VS-10ETF06-M3 600 700 3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 128 °C, 180° conduction half sine wave 10 Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t 10 ms sine pulse, rated VRRM applied 110 10 ms sine pulse, no voltage reapplied 130 10 ms sine pulse, rated VRRM applied 60 10 ms sine pulse, no voltage reapplied 85 t = 0.1 to 10 ms, no voltage reapplied 850 UNITS A A2s A2√s Revision: 29-Nov-2021 Document Number: 96210 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF0...-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER Maximum forward voltage drop VFM rt Forward slope resistance VF(TO) Threshold voltage Maximum reverse leakage current IRM TEST CONDITIONS VALUES 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C V 23.5 mΩ 0.85 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS 1.2 mA 3.0 RECOVERY CHARACTERISTICS SYMBOL PARAMETER Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr TEST CONDITIONS IF at 10 Apk 25 A/μs 25 °C S Snap factor VALUES UNITS 200 ns 2.75 A 0.32 μC IFM trr t dir dt 0.6 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance junction to case RthJC Maximum thermal resistance junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device UNITS -40 to +150 °C 1.5 62 Mounting surface, smooth and greased °C/W 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-220AC 2L (JEDEC) 10ETF02 10ETF04 10ETF06 Revision: 29-Nov-2021 Document Number: 96210 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF0...-M3 Series www.vishay.com Vishay Semiconductors 20 10ETF.. Series RthJC (DC) = 1.5 °C/W 145 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 Ø Conduction angle 135 130 125 30° 60° 90° 120° 16 120° 180° DC 30° RMS limit 12 8 Ø 4 Conduction period 0 0 2 6 4 10 8 12 0 4 12 8 16 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 120 150 10ETF.. Series RthJC (DC) = 1.5 °C/W 140 Ø Conduction period 135 130 120° 125 60° DC 90° At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 110 Peak Half Sine Wave Forward Current (A) 145 30° 100 90 80 70 60 50 40 VS-10ETF.. Series 30 180° 20 120 0 2 4 6 8 10 12 14 1 16 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 150 16 120° 14 90° 130 60° 12 180° 30° 10 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 90° 60° 180° 120 Maximum Allowable Case Temperature (°C) 10ETF.. Series TJ = 150 °C RMS limit 8 6 Ø 4 Conduction angle 2 10ETF.. Series TJ = 150 °C 2 4 6 8 90 70 50 30 VS-10ETF.. Series 0 0 110 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 10 10 0.01 0.1 1 10 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 29-Nov-2021 Document Number: 96210 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF0...-M3 Series Vishay Semiconductors 100 1.4 Qrr - Typical Reverse Recovery Charge (µC) 1.2 TJ = 150 °C TJ = 25 °C 10 IFM = 20 A 1.0 IFM = 10 A 0.8 0.6 IFM = 5 A 0.4 IFM = 2 A 0.2 IFM = 1 A 1 0.5 0 1.0 1.5 2.0 2.5 0 3.0 40 80 120 160 200 Instantaneous Forward Voltage (V) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 2.5 0.4 10ETF.. Series TJ = 150 °C 8EWF..S Series T J = 25 °C 0.3 I FM = 20 A 0.2 10 A 8A 5A 0.1 2A IFM = 20 A 2.0 IFM = 10 A 1.5 IFM = 5 A 1.0 IFM = 2 A 0.5 IFM = 1 A 1A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 Rate Of Fall Of Forward Current - dI/dt (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.4 15 10ETF.. Series TJ = 25 °C Irr - Typical Reverse Recovery Current (A) 10ETF.. Series TJ = 150 °C trr - Typical Reverse Recovery Time (µs) 10ETF.. Series TJ = 25 °C 10ETF.. Series Qrr - Typical Reverse Recovery Charge (µC) Typical Reverse Recovery Time - Trr (µs) Instantaneous Forward Current (A) www.vishay.com 0.3 IFM = 20 A 0.2 IFM = 10 A IFM = 5 A 0.1 IFM = 2 A IFM = 20 A 12 IFM = 10 A IFM = 5 A 9 IFM = 2 A 6 IFM = 1 A 3 IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Revision: 29-Nov-2021 Document Number: 96210 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF0...-M3 Series www.vishay.com Vishay Semiconductors 20 Irr - Typical Reverse Recovery Current (A) 10ETF.. Series TJ = 150 °C IFM = 20 A 16 IFM = 10 A IFM = 5 A 12 IFM = 2 A 8 IFM = 1 A 4 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) ZthJC - Transient Thermal Impedance (°C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 10 Steady state value (DC operation) 1 0.1 0.01 Single pulse 0.001 0.001 0.01 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 10ETF.. Series 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 29-Nov-2021 Document Number: 96210 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETF0...-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 E T F 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (10 = 10 A) 3 - Circuit configuration: E = single 4 - Package: T = 2L TO-220AC 5 - Type of silicon: F = fast soft recovery rectifier 02 = 200 V 04 = 400 V 06 = 600 V 6 - Voltage code x 100 = VRRM 7 - Environmental digit -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-10ETF02-M3 50 Antistatic plastic tube VS-10ETF04-M3 50 Antistatic plastic tube VS-10ETF06-M3 50 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 Revision: 29-Nov-2021 Document Number: 96210 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-10ETF04-M3 VS-10ETF02-M3 VS-10ETF06-M3