VS-25TTS12SLHM3

VS-25TTS12SLHM3 www.vishay.com Vishay Semiconductors Thyristor, Surface Mount, Phase Control SCR, 16 A FEATURES 4 Anode 2, 4 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Meets JESD 201 class 1A whisker test • Flexible solution for reliable AC power rectification • Easy control peak current at charger power up to reduce passive / electromechanical components • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 1 D2PAK 1 3 Cathode Gate (TO-263AB) APPLICATIONS PRIMARY CHARACTERISTICS IT(AV) 16 A VDRM/VRRM 1200 V • On-board and off-board EV / HEV battery chargers • Renewable energy inverters VTM 1.25 V DESCRIPTION IGT 45 mA TJ -40 to +125 °C Package D2PAK (TO-263AB) The VS-25TTS12SLHM3 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. Circuit configuration Single SCR OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 μm) copper 3.5 5.5 Aluminum IMS, RthCA = 15 °C/W 8.5 13.5 Aluminum IMS with heatsink, RthCA = 5 °C/W 16.5 25.0 UNITS A Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES 16 25 IRMS UNITS A VRRM/VDRM 1200 V ITSM 350 A VT 16 A, TJ = 25 °C dV/dt dI/dt 1.25 V 500 V/μs 150 A/μs -40 to +125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM / IDRM, AT 125 °C mA 1200 1200 10 TJ VOLTAGE RATINGS PART NUMBER VS-25TTS12SLHM3 Revision: 22-Feb-18 Document Number: 96123 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS12SLHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle,  non-repetitive surge current ITSM TEST CONDITIONS VALUES TYP. MAX. TC = 93 °C, 180° conduction half sine wave 16 10 ms sine pulse, rated VRRM applied 300 UNITS 25 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 630 A Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 6300 A2s Maximum on-state voltage drop VTM 16 A, TJ = 25 °C 1.25 V 12.0 m 1.0 V On-state slope resistance Threshold voltage Maximum reverse and direct leakage current rt VT(TO) IRM / IDM TJ = 125 °C TJ = 25 °C TJ = 125 °C Holding current IH VS-25TTS08, VS-25TTS12 Maximum latching current IL Anode supply = 6 V, resistive load, TJ = 25 °C Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current di/dt 0.5 VR = Rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C TJ = TJ max., linear to 80 %, VDRM = Rg - k = open A2s 10 - 150 mA 200 500 V/μs 150 A/μs TRIGGERING PARAMETER Maximum peak gate power SYMBOL TEST CONDITIONS VALUES UNITS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current +IGM 1.5 A Maximum peak negative gate voltage -VGM 10 V Anode supply = 6 V, resistive load, TJ = -10 °C Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD 60 Anode supply = 6 V, resistive load, TJ = 25 °C 45 Anode supply = 6 V, resistive load, TJ = 125 °C 20 Anode supply = 6 V, resistive load, TJ = -10 °C 2.5 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq TEST CONDITIONS TJ = 25 °C TJ = 125 °C 0.9 4 μs 110 Revision: 22-Feb-18 Document Number: 96123 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS12SLHM3 www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS VALUES TJ, TStg Soldering temperature TS Maximum thermal resistance,  junction to case RthJC UNITS -40 to +125 For 10 s (1.6 mm from case) 260 DC operation 1.1 °C °C/W Typical thermal resistance,  junction to ambient (PCB mount) RthJA (1) 40 Approximate weight 2 g 0.07 oz. Case style D2PAK (TO-263AB) Marking device 25TTS12SH 130 R thJC (DC) = 1.1 °C/W 120 Conduction angle 110 30° 60° 90° 100 120° 180° 90 0 5 10 15 20 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm] copper 40 °C/W Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 130 R thJC (DC) = 1.1 °C/W 120 Conduction period 100 90 60° 90° 120° 30° 180° DC 80 0 5 10 15 20 25 Average On-state Current (A) Fig. 2 - Current Rating Characteristics 180° 120° 90° 60° 30° 20 15 RMS limit 10 Conduction angle 5 TJ = 125 °C 0 0 4 8 12 16 20 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics Average On-state Current (A) Fig. 1 - Current Rating Characteristics 110 25 30 35 DC 180° 120° 90° 60° 30° 30 25 20 RMS Limit 15 Conduction period 10 5 TJ = 125 °C 0 0 5 10 15 20 25 30 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics Revision: 22-Feb-18 Document Number: 96123 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS12SLHM3 www.vishay.com 400 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 300 Maximum non repetitive surge current vs. pulse train duration. 350 Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied 300 Rated VRRM reapplied Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 350 Vishay Semiconductors 250 200 250 200 150 100 0.01 150 1 10 100 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 100 TJ = 25 °C TJ = 125 °C 10 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thJC (°C/W) 10 Steady state value (DC operation) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Gate Characteristics Revision: 22-Feb-18 Document Number: 96123 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS12SLHM3 www.vishay.com Vishay Semiconductors Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for = 6 µs (1) (2) (3) (4) PGM = 40 W, t p = 1 ms PGM = 20 W, t p = 2 ms PGM = 8 W, tp = 5 ms PGM = 4 W, tp = 10 ms (a ) (b) VGD TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) IGD (2) (3) (1) Frequency limited by PG(AV) 0.1 0.001 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 25 T T S 12 S L H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (25 = 25 A) 3 - Circuit configuration: T = single thyristor 4 - Package: T = D2PAK (TO-263AB) 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage rating: voltage code x 100 = VRRM 7 - S = surface mountable 8 - L = tape and reel (left oriented), for different orientation contact factory 9 - H = AEC-Q101 qualified 10 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free 12 = 1200 V ORDERING INFORMATION (Example) PREFERRED P/N VS-25TTS12SLHM3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96317 Revision: 22-Feb-18 Document Number: 96123 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0° to 8° Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC® outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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