VS-301MT160C

VS-301MT...C Series www.vishay.com Vishay Semiconductors Three Phase Bridge, 300 A (Power Modules) FEATURES • Blocking voltage up to 1800 V • High surge capability • High thermal conductivity package, electrically insulated case • Excellent power volume ratio • 3600 VRMS isolating voltage • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MTC DESCRIPTION PRIMARY CHARACTERISTICS IO 300 A at 100 °C VRRM 1600 V to 1800 V Package MTC Circuit configuration Three phase bridge A range of extremely compact, encapsulated three phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IO (1) IFSM I2t VALUES UNITS 258 A TC 110 °C 50 Hz 2400 60 Hz 2512 50 Hz 28 795 60 Hz 26 285 I2√t 287 955 A A2s A2√s VRRM Range 1600 to 1800 V TStg Range -40 to +125 °C TJ Range -40 to +150 °C Note (1) Maximum output current must be limited to 250 A to do not exceed the maximum temperature of terminals ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-301MT...C VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 160 1600 1700 180 1800 1900 IRRM MAXIMUM AT TJ = MAXIMUM mA 12 Revision: 16-Feb-2022 Document Number: 96991 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-301MT...C Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum DC output current at case temperature IO TEST CONDITIONS IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t I2√t for fusing UNITS 300 A 100 °C 120° rect. conduction angle t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current VALUES 2400 No voltage reapplied 2512 2018 100 % VRRM reapplied 2113 Initial TJ = TJ maximum No voltage reapplied 28 795 26 285 20 360 100 % VRRM reapplied t = 0.1 ms to 10 ms, no voltage reapplied 287 955 VFT(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum 0.79 High level value of threshold voltage VFT(TO)2 (I > π x IF(AV)), TJ maximum 0.96 Low level value of forward slope resistance rf1 16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum 3.36 High level of forward slope resistance rf2 (I > π x IF(AV)), TJ maximum 3.22 Ipk = 240 A, TJ = 25 °C, per junction 1.54 Ipk = 300 A, TJ = 25 °C, per junction 1.7 VFM RMS isolation voltage VISOL A2s 18 590 Low level value of threshold voltage Maximum forward voltage drop A TJ = 25 °C, all terminal shorted f = 50 Hz, t = 1 s A2√s V mΩ V 3600 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating TEST CONDITIONS VALUES TJ -40 to +150 Maximum storage temperature TStg -40 to +125 Maximum thermal resistance, junction to case RthJC Typical thermal resistance, case to heat sink Mounting torque ± 15 % RthCS to heat sink DC operation per module 0.038 DC operation per junction 0.23 Per module Mounting surface smooth, flat, and greased 0.03 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. to terminal Approximate weight 5 UNITS °C °C/W Nm 5 235 g ΔR CONDUCTION PER JUNCTION DEVICES VS-301MT...C Series SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.044 0.050 0.061 0.087 0.143 0.029 0.050 0.066 0.091 0.145 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 16-Feb-2022 Document Number: 96991 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-301MT...C Series Vishay Semiconductors 150 Instantaneous Forward Current (A) Maximum Allowable Case Temperature (°C) www.vishay.com 140 130 120 °C (Rect.) 120 110 100 90 80 70 60 50 0 1000 100 TJ = 150 °C TJ = 25 °C 10 Per Junction 1 0 50 100 150 200 250 300 350 400 450 500 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Total Output Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Forward Voltage Drop Characteristics 900 900 TJ = 150 °C 800 Maximum Total Power Loss (W) Maximum Total Power Loss (W) 0.5 700 600 120 ° (Rect.) 500 400 300 200 100 0 0 50 100 150 200 800 RthSA = 0.1 °C/W 700 600 0.15 °C/W 500 0.2 °C/W 400 0.25 °C/W 0.3 °C/W 300 0.4 °C/W 0.5 °C/W 0.7 °C/W 0.9 °C/W 1.1 °C/W 2.0 °C/W 200 100 0 250 0 Total Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) 2200 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 2000 1800 1600 1400 1200 1000 800 Per Junction 600 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 4 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 3 - Total Power Loss Characteristics 2500 Maximum non-repetitive surge current vs. pulse drain duration. Initial TJ = 150 °C No voltage reapplied rated VRRM reapplied 2300 2100 1900 1700 1500 1300 1100 900 700 Per Junction 500 0.01 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Revision: 16-Feb-2022 Document Number: 96991 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-301MT...C Series ZthJC - Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 1 0.1 0.01 Steady state value Rth JC = 0.23 °C/W per junction (DC operating) 0.001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 6 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 30 1 MT 160 1 2 3 4 5 C 1 - Vishay Semiconductors product 2 - Current rating code: 30 = 300 A (average) 3 - Circuit configuration (three phase diodes bridge) 4 - Package indicator 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) CIRCUIT CONFIGURATION + ~ - LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96003 Revision: 16-Feb-2022 Document Number: 96991 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors MTC DIMENSIONS in millimeters 5-M6 3 30 Screwing depth max. 10 52 13 Ø6 + 54 27 6.5 .5 - 25 65 72 80 94 Revision: 03-Jun-16 Document Number: 96003 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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