VS-40MT160P-P

VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P www.vishay.com Vishay Semiconductors MTP PressFit Power Module Three Phase Bridge, 45 A to 100 A FEATURES • Low VF • Low profile package • Direct mounting to heatsink • PressFit pins technology • Low junction to case thermal resistance • 3500 VRMS insulation voltage • Designed and qualified for industrial level • PressFit pins locking technology PATENT(S): www.vishay.com/patents • UL approved file E78996 MTP PressFit • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRIMARY CHARACTERISTICS IO 45 A to 100 A VRRM 1600 V Package MTP PressFit Circuit configuration Three phase bridge • Power conversion machines • Welding • UPS • SMPS • Motor drives • General purpose and heavy duty application DESCRIPTION The new MTP module is easy to use thanks to solder less method for contacting PressFit pins to the PCB. The low profile package has been specifically conceived to maximize space saving and optimize the electrical layout of the application specific power supplies. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IO IFSM I2t CHARACTERISTICS VALUES 100MT UNITS 45 75 100 A °C TC 100 80 80 270 380 450 60 Hz 280 398 470 50 Hz 365 724 1013 60 Hz 325 660 920 3650 7240 10 130 1600 VRRM TJ VALUES 70MT 50 Hz I2t TStg VALUES 40MT Range - 40 to + 150 - 40 to + 150 A A2s A2s V °C PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and international patents. Revision: 22-May-2019 Document Number: 94870 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE REVERSE VOLTAGE V VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 160 1600 VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P VRSM, MAXIMUM IRRM MAXIMUM AT NON-REPETITIVE PEAK TJ = 150 °C V mA 1700 5 FORWARD CONDUCTION PARAMETER SYMBOL Maximum DC output current at case temperature IO TEST CONDITIONS Maximum peak, one cycle forward, non-repetitive on state surge current IFSM No voltage reapplied t = 8.3 ms t = 10 ms 100 % VRRM reapplied t = 8.3 ms t = 10 ms Maximum I2t I2t for fusing No voltage reapplied t = 8.3 ms t = 10 ms I2t Value of threshold voltage VF(TO) Slope resistance rt Initial  TJ = TJ maximum 100 A °C 100 80 80 270 380 450 280 398 470 225 320 380 240 335 400 365 724 1013 325 660 920 253 512 600 240 467 665 t = 0.1 ms to 10 ms, no voltage reapplied 3650 7240 10 130 TJ maximum VFM TJ = 25 °C; tp = 400 μs single junction  (40MT, Ipk = 40 A) (70MT, Ipk = 70 A) (100MT, Ipk = 100 A) SYMBOL TEST CONDITIONS Maximum forward voltage drop 75 100 % VRRM reapplied t = 8.3 ms Maximum I2t for fusing 45 120° rect. to conduction angle t = 10 ms VALUES VALUES VALUES UNITS 40MT 70MT 100MT  A2s A2s 0.78 0.82 0.75 V 14.8 9.5 8.1 m 1.45 1.45 1.51 V INSULATION TABLE PARAMETER RMS insulation voltage VINS VALUES VALUES VALUES UNITS 40MT 70MT 100MT TJ = 25 °C, all terminal shorted, f = 50 Hz, t = 1 s 3500 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink per module Mounting torque to heatsink± 10 % Approximate weight SYMBOL TEST CONDITIONS VALUES VALUES VALUES UNITS 40MT 70MT 100MT TJ - 40 to + 150 TStg - 40 to + 150 RthJC RthCS °C DC operation per module 0.27 0.23 DC operation per junction 1.6 1.38 1.14 120° rect. conduction angle per module 0.38 0.29 0.22 120° rect. conduction angle per junction 2.25 1.76 1.29 Mounting surface smooth, flat and greased heatsink compound thermal conductivity = 0.42 W/mK A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads 0.19 K/W 0.1 4 Nm 65 g Revision: 22-May-2019 Document Number: 94870 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P www.vishay.com Vishay Semiconductors CLEARANCE AND CREEPAGE DISTANCES PARAMETER TEST CONDITIONS MTP PressFit Creepage distance Shortest distance along external surface of the insulating material  between terminals which are not internally short circuited together 40MT...P R thJC (DC) = 0.27 K/W Per Module 150 140 130 120 120 ˚ (Rect) 110 100 90 80 0 10 20 30 40 50 Total Output Current (A) Peak Half Sine Wave On-State Current (A) 160 250 300 Instantaneous On-State Current (A) TJ = 25 ˚C TJ = 150 ˚C 100 10 40MT...P 1 0 1 2 3 4 5 6 Instantaneous On-State Voltage (V) Fig. 2 - On-State Voltage Drop Characteristics mm 13 At any rated load condition and with rated VRRM applied following surge. Initial Tj = 150 ˚ C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 200 150 100 40MT...P Per Junction 50 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 3 - Maximum Non-Repetitive Surge Current Fig. 1 - Current Rating Characteristics 1000 UNITS 10.2 Peak Half Sine Wave On-State Current (A) Maximum Allowable Case Temperature (°C) Clearance External shortest distances in air between terminals  which are not internally short circuited together Maximum non repetitive surge current vs. pulse train duration. Control of conduction may not be maintained. Initial TJ = 150 ˚ C No voltage reapplied Rated VRRM reapplied 250 200 150 100 40MT...P Per Junction 50 0.01 0.1 1 Pulse Train Duration(s) Fig. 4 - Maximum Non-Repetitive Surge Current Revision: 22-May-2019 Document Number: 94870 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P www.vishay.com Vishay Semiconductors 250 1 0. = A hS Rt W K/ 200 2 0. Tj = 150˚C 0. 3 K 0.5 /W K/ W 0.4 K/ W a elt -D R 120˚ (Rect) 150 W K/ Maximum Total Power Loss (W) 40MT...P 1K /W 100 50 0 0 10 20 30 40 Total Output Current (A) 50 0 30 60 90 120 150 60 Maximum Allowable Ambient Temperature (°C) Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink) 160 70MT...P R thJC (DC) = 0.23 K/W Per Module 150 140 130 120 110 120˚ (Rect) 100 90 80 70 60 0 350 300 250 200 150 1 Tj = 150˚C 100 10 70MT...P 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 100 Fig. 8 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Instantaneous On-state Current (A) Tj = 25˚C 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Total Output Current (A) 1000 70MT...P Per Junction 100 10 20 30 40 50 60 70 80 Fig. 6 - Current Rating Characteristics At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 150˚C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 400 350 300 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T j = 150˚C No Voltage Reapplied Rated V rrm Reapplied 250 200 150 100 70MT...P Per Junction 50 0.01 0.1 1 Pulse Train Duration(s) Fig. 9 - Maximum Non-Repetitive Surge Current Revision: 22-May-2019 Document Number: 94870 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P www.vishay.com Vishay Semiconductors 300 a elt -D R 120˚ (Rect) 150 W K/ 200 1 0. 0. 2 K/ W 0.3 K/ 0.4 W K/W 0.5 K/W Tj = 150˚C = Maximum Total Power Loss (W) A hS Rt 70MT...P 250 1K /W 100 50 0 0 20 40 Total Output Current (A) 60 0 80 30 60 90 120 150 Maximum Allowable Ambient Temperature (°C) Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) Fig. 10 - Current Rating Nomogram (1 Module Per Heatsink) 140 100MT...P R thJC (DC) = 0.19 K/W 120 Per Module 100 80 120˚ (Rect) 60 40 40 50 60 70 80 90 100 110 120 130 100MT...P 100 10 Tj = 150˚C Tj = 25˚C 1 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Fig. 12 - On-State Voltage Drop Characteristics Initial Tj = 125˚C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 350 300 250 200 100MT...P Per Junction 150 100 1 10 100 Fig. 13 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Instantaneous On-state Current (A) 1000 At any rated load condition and with rated Vrrm applied following surge. Number Of Equal Amplitude Half Cycle Current Pulses (N) Total Output Current (A) Fig. 11 - Current Rating Characteristics 400 500 Maximum non repetitive surge current vs. pulse train duration. Control of conduction may not be maintained. Initial Tj = 125 ˚C No voltage reapplied Rated Vrrm reapplied 450 400 350 300 250 200 150 100 50 100MT...P Per Junction 0 0.01 0.1 1 10 Pulse Train Duration(s) Fig. 14 - Maximum Non-Repetitive Surge Current Revision: 22-May-2019 Document Number: 94870 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P www.vishay.com Vishay Semiconductors Maximum Total Power Loss (W) 500 Rt hS 0.0 A = 5K 0 .0 0.1 /W 25 K/ K/ W W 100MT...P Tj = 150˚C 400 300 120˚ (Rect) 200 0.2 K/W 0.3 K/W -D elt a R 0.5 K/W 1 K/W 100 0 0 20 40 60 80 Total Output Current (A) 0 30 60 90 120 150 100 Maximum Allowable Ambient Temperature (°C) Transient Thermal Impedance Z thJC (K/W) Fig. 15 - Current Rating Nomogram (1 Module Per Heatsink) 10 Steady State Value RthJC per junction = 1.6 K/W (40MT...P) 1 1.38 K/W (70MT...P 1.14 K/W (100MT...P) 40MT...P 70MT...P 100MT...P DC Operation) 0.1 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 16 - Thermal Impedance ZthJC Characteristics Revision: 22-May-2019 Document Number: 94870 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 0 MT 160 1 2 3 4 5 P -P 6 1 - Vishay Semiconductors product 2 - Current rating code 3 - Circuit configuration code: 0 = Three Phase Bridge 4 - Package indicator 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - Pinout code (PressFit pins) 4 = 45 A 7 = 75 A 10 = 100 A CIRCUIT CONFIGURATION MTP PressFit Three Phase Bridge D1 D3 D5 D2 D4 D6 A1 B1 C1 A7 A6 E7 F7 L7 M7 I1 L1 M1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95595 Revision: 22-May-2019 Document Number: 94870 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors MTP Three Phase PressFit 20 ±0,2 2,5 13,5 ±0,2 17 ±0,35 3 ±0,15 DIMENSIONS in millimeters 45 ±0,3 39,5 ±0,2 x8 22,8 ±0,15 27,5 ±0,2 31,8 ±0,2 33,2 ±0,3 1 7,6 ±0,15 2, 1,3 ,6 R2 6 X 45 ° 3 ±0,15 12 ±0,15 30 ±0,15 0,4 Typical Pin position Revision: 18-Mar-14 48,7 ±0,3 63,5 ±0,3 Document Number: 95595 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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