VS-40MT160PAPBF

VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF www.vishay.com Vishay Semiconductors Three Phase Bridge (Power Modules), 45 A to 100 A FEATURES • • • • • • • • • MT...PA MT...PB Low VF Low profile package Direct mounting to heatsink Flat pin/round pin versions with PCB solderable terminals Low junction to case thermal resistance 3500 VRMS insulation voltage UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRIMARY CHARACTERISTICS IO 45 A to 100 A VRRM 1600 V Package MTP Circuit configuration Three phase bridge • • • • • • Power conversion machines Welding UPS SMPS Motor drives General purpose and heavy duty application DESCRIPTION A range of extremely compact three phase rectifier bridges offering efficient and reliable operation. The low profile package has been specifically conceived to maximize space saving and optimize the electrical layout of the application specific power supplies. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IO IFSM I2t VALUES 40MT CHARACTERISTICS VALUES 70MT VALUES 100MT 45 75 100 A TC 100 80 80 °C 50 Hz 270 380 450 60 Hz 280 398 470 50 Hz 365 724 1013 60 Hz 325 660 920 3650 7240 10 130 I2t VRRM 1600 TStg - 40 to + 150 TJ UNITS Range A A2s A2s V °C - 40 to + 150 ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-40MT160P, VS-70MT160P, VS-100MT160P VOLTAGE CODE REVERSE VOLTAGE V VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK V IRRM MAXIMUM AT TJ = 150 °C mA 160 1600 1700 5 Revision: 21-May-2019 Document Number: 94538 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF www.vishay.com Vishay Semiconductors FORWARD CONDUCTION SYMBO L PARAMETER Maximum DC output current at case temperature IO TEST CONDITIONS 120° rect. to conduction angle t = 10 ms Maximum peak, one cycle forward, non-repetitive on state surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 10 ms Maximum for fusing Value of threshold voltage Slope resistance Maximum forward voltage drop I2t VF(TO) rt 45 75 100 A 100 80 80 °C 270 380 450 280 398 470 100 % VRRM reapplied 225 320 380 Initial  TJ = TJ maximum 100 % VRRM reapplied t = 8.3 ms I2t VALUES UNITS 100MT No voltage reapplied No voltage reapplied t = 8.3 ms VALUES VALUES 40MT 70MT t = 0.1 ms to 10 ms, no voltage reapplied TJ maximum VFM TJ = 25 °C; tp = 400 μs single junction (40MT, Ipk = 40 A) (70MT, Ipk = 70 A) (100MT,Ipk = 100 A) SYMBOL TEST CONDITIONS 240 335 400 365 724 1013  325 660 920 253 512 600 240 467 665 3650 7240 10 130 A2s 0.78 0.82 0.75 V 14.8 9.5 8.1 m 1.45 1.45 1.51 V A2s INSULATION TABLE PARAMETER RMS insulation voltage VINS VALUES VALUES VALUES UNITS 40MT 70MT 100MT TJ = 25 °C, all terminal shorted, f = 50 Hz, t = 1 s 3500 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink per module Mounting torque to heatsink ± 10 % Approximate weight SYMBOL TEST CONDITIONS VALUES VALUES VALUES UNITS 40MT 70MT 100MT TJ - 40 to + 150 TStg - 40 to + 150 °C RthJC RthCS DC operation per module 0.27 0.23 0.19 DC operation per junction 1.6 1.38 1.14 120° rect. conduction angle per module 0.38 0.29 0.22 120° rect. conduction angle per junction 2.25 1.76 1.29 Mounting surface smooth, flat and greased Heatsink compound thermal conductivity = 0.42W/mK K/W 0.1 A mounting compound is recommended and the torque should be rechecked after a period of 3 h to allow for the spread of the compound. Lubricated threads 4 Nm 65 g CLEARANCE AND CREEPAGE DISTANCES PARAMETER TEST CONDITIONS Clearance External shortest distances in air between terminals  which are not internally short circuited together Creepage distance Shortest distance along external surface of the insulating material between terminals which are not internally short circuited together MT...PA MT...PB UNITS 10.9 12.3 mm Revision: 21-May-2019 Document Number: 94538 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF 160 Vishay Semiconductors 40MT...P R thJC (DC) = 0.27 K/W Per Module 150 140 130 120 120˚ (Rect) 110 100 90 80 0 10 20 30 40 250 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) www.vishay.com 200 150 100 40MT...P Per Junction 50 50 1 Fig. 1 - Current Rating Characteristics Tj = 150˚C 10 40MT...P 1 2 3 4 300 Peak Half Sine Wave On-state Current (A) Instantaneous On-state Current (A) Tj = 25˚C 1 5 100 Fig. 3 - Maximum Non-Repetitive Surge Current 1000 0 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Total Output Current (A) 100 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 150˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T j = 150˚C No Voltage Reapplied Rated V rrm Reapplied 250 200 150 100 40MT...P Per Junction 50 0.01 6 0.1 1 Pulse Train Duration(s) Instantaneous On-state Voltage (V) Fig. 2 - On-State Voltage Drop Chracteristics Fig. 4 - Maximum Non-Repetitive Surge Current 40MT...P 1 0. = A hS Rt W K/ 200 2 0. Tj = 150˚C R 120˚ (Rect) 150 a elt -D 0. 3 K 0.5 /W K/ W 0.4 K/ W W K/ Maximum Total Power Loss (W) 250 1K /W 100 50 0 0 10 20 30 40 Total Output Current (A) 50 0 30 60 90 120 150 60 Maximum Allowable Ambient Temperature (°C) Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink) Revision: 21-May-2019 Document Number: 94538 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF Vishay Semiconductors 160 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) www.vishay.com 70MT...P R thJC (DC) = 0.23 K/W Per Module 150 140 130 120 110 120˚ (Rect) 100 90 80 70 60 0 200 150 100 Peak Half Sine Wave On-state Current (A) Tj = 150˚C 100 10 70MT...P 1 3 10 100 Fig. 8 - Maximum Non-Repetitive Surge Current Tj = 25˚C 2 70MT...P Per Junction 1 1000 Instantaneous On-state Current (A) 250 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 6 - Current Rating Characteristics 1 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 150˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 300 10 20 30 40 50 60 70 80 Total Output Current (A) 0 350 4 5 400 350 300 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T j = 150˚C No Voltage Reapplied Rated V rrm Reapplied 250 200 150 100 70MT...P Per Junction 50 0.01 0.1 1 Pulse Train Duration(s) Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Fig. 9 - Maximum Non-Repetitive Surge Current 70MT...P 0. 2 R 120˚ (Rect) 150 a elt -D 200 W K/ K/ W 0.3 K/ W 0.4 K/W 0.5 K/W 1 0. Tj = 150˚C = 250 A hS Rt Maximum Total Power Loss (W) 300 1K /W 100 50 0 0 20 40 Total Output Current (A) 60 0 80 30 60 90 120 150 Maximum Allowable Ambient Temperature (°C) Fig. 10 - Current Rating Nomogram (1 Module Per Heatsink) Revision: 21-May-2019 Document Number: 94538 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF Vishay Semiconductors 140 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) www.vishay.com 100MT...P R thJC (DC) = 0.19 K/W 120 Per Module 100 80 120˚ (Rect) 60 40 40 50 60 70 80 90 100 110 120 130 Peak Half Sine Wave On-state Current (A) Instantaneous On-state Current (A) 100MT...P 100 10 Tj = 150˚C Tj = 25˚C 2 2.5 3 300 250 200 100MT...P Per Junction 150 100 10 100 Fig. 13 - Maximum Non-Repetitive Surge Current 1000 1.5 350 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 11 - Current Rating Characteristics 1 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1 Total Output Current (A) 1 0.5 400 3.5 4 500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 400 Initial T j = 125˚C No Voltage Reapplied 350 Rated V rrm Reapplied 450 300 250 200 150 100 50 100MT...P Per Junction 0 0.01 0.1 1 10 Pulse Train Duration(s) Instantaneous On-state Voltage (V) Fig. 12 - On-State Voltage Drop Characteristics Fig. 14 - Maximum Non-Repetitive Surge Current Maximum Total Power Loss (W) 500 Rt hS 0.0 A = 5K 0 .0 0.1 /W 25 K/ K/ W W 100MT...P Tj = 150˚C 400 300 120˚ (Rect) 200 0.2 K/W 0.3 K/W -D elt a R 0.5 K/W 1 K/W 100 0 0 20 40 60 80 Total Output Current (A) 0 30 60 90 120 150 100 Maximum Allowable Ambient Temperature (°C) Fig. 15 - Current Rating Nomogram (1 Module Per Heatsink) Revision: 21-May-2019 Document Number: 94538 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF Transient Thermal Impedance Z thJC (K/W) www.vishay.com Vishay Semiconductors 10 Steady State Value RthJC per junction = 1.6 K/W (40MT...P) 1 1.38 K/W (70MT...P 1.14 K/W (100MT...P) 40MT...P 70MT...P 100MT...P DC Operation) 0.1 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 16 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 10 0 MT 160 1 2 3 4 5 P B PbF 6 7 1 - Vishay Semiconductors product 2 - Current rating code 3 - Circuit configuration code: 0 = three phase rectifier bridge 4 - Essential part number 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) 6 - Pinout code 7 - Lead (Pb)-free 4 = 45 A 7 = 75 A 10 = 100 A A = flat pins B = round pins CIRCUIT CONFIGURATION LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95244 Revision: 21-May-2019 Document Number: 94538 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors MTP Flat and Round Pin DIMENSIONS FOR MTP WITH FLAT PIN in millimeters 14 7 Electrical circuit 2 42 ± 0.1 3, 4 4 5 6 7 12 2.5 1, 2 44.5 7 7 7 7.4 7 22 Ø 5.2 (x 2) 22 1 6 5 14 7 14 39.5 1.3 27.5 2 3 32.5 ± 0.5 0.5 4 0.5 5.5 5.5 Ø5 16 10.5 12 ± 0.5 48.7 63.5 ± 0.25 Revision: 06-Sep-2021 Document Number: 95244 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS FOR MTP WITH ROUND PIN in millimeters 14 Ø5 7 4 Electrical circuit 7 20.5 ± 0.1 3, 4 12 2.5 5 6 7 1, 2 44.5 7 7 7 Ø 1.1 7 5 6 14 4 10.5 1 32.5 ± 0.5 2 27.5 3 22 4 12 ± 0.5 Ø5 Ø 5.2 (x 2) 16 7 14 7.4 31.8 1.3 39.5 48.7 63.5 ± 0.25 Revision: 06-Sep-2021 Document Number: 95244 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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