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VS-30CTQ040-1HM3

VS-30CTQ040-1HM3

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO263

  • 描述:

    DIODESCHOTTKY40V15ATO262

  • 数据手册
  • 价格&库存
VS-30CTQ040-1HM3 数据手册
VS-30CTQ...SHM3, VS-30CTQ...-1HM3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A D2PAK FEATURES TO-262 • 175 °C TJ operation • Center tap configuration • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Base common cathode 2 Base common cathode 2 • Guard ring for enhanced ruggedness and long term reliability 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode VS-30CTQ...SHM3 VS-30CTQ...-1HM3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified meets JESD-201 class 1A whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRODUCT SUMMARY IF(AV) 2 x 15 A VR 35 V to 45 V VF at IF 0.56 V IRM 15 mA at 125 °C TJ max. 175 °C EAS 20 mJ Package TO-263AB (D2PAK), TO-262AA Diode variation Common cathode The VS-30CTQ... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.       MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM VALUES UNITS 30 A 35 to 45 V IFSM tp = 5 μs sine 1060 A VF 15 Apk, TJ = 125 °C (per leg) 0.56 V TJ Range -55 to +175 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-30CTQ035SHM3 VS-30CTQ035-1HM3 VS-30CTQ040SHM3 VS-30CTQ040-1HM3 VS-30CTQ045SHM3 VS-30CTQ045-1HM3 UNITS 35 40 45 V Revision: 19-Nov-14 Document Number: 95804 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTQ...SHM3, VS-30CTQ...-1HM3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 5  IF(AV) TEST CONDITIONS VALUES 50 % duty cycle at TC = 127 °C, rectangular waveform UNITS 30 A Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 3.0 A, L = 4.40 mH 20 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 3.0 A Repetitive avalanche current per leg 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 1060 265 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 15 A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 °C 30 A 15 A TJ = 125 °C 30 A Maximum reverse leakage current per leg See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR TJ = 125 °C VALUES UNITS 0.62 0.76 0.56 V 0.70 2 15 mA Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 900 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 8.0 nH Maximum voltage rate of change dV/dt 10 000 V/μs VALUES UNITS -55 to +175 °C Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage  temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  junction to case per leg RthJC Maximum thermal resistance,  junction to case per package Typical thermal resistance,  case to heatsink RthCS DC operation See fig. 4 3.25 DC operation 1.63 Mounting surface, smooth and greased 0.50 °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf cm (lbf in) Approximate weight Mounting torque  Case style D2PAK 30CTQ035SH 30CTQ040SH 30CTQ045SH Case style TO-262 30CTQ035-1H 30CTQ040-1H 30CTQ045-1H Marking device Revision: 19-Nov-14 Document Number: 95804 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CTQ040-1HM3 价格&库存

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