VS-30CTQ...SHM3, VS-30CTQ...-1HM3 Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
D2PAK
FEATURES
TO-262
• 175 °C TJ operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Base
common
cathode
2
Base
common
cathode
2
• Guard ring for enhanced ruggedness and long term
reliability
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
VS-30CTQ...SHM3
VS-30CTQ...-1HM3
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified meets JESD-201 class 1A whisker
test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
PRODUCT SUMMARY
IF(AV)
2 x 15 A
VR
35 V to 45 V
VF at IF
0.56 V
IRM
15 mA at 125 °C
TJ max.
175 °C
EAS
20 mJ
Package
TO-263AB (D2PAK), TO-262AA
Diode variation
Common cathode
The VS-30CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
VALUES
UNITS
30
A
35 to 45
V
IFSM
tp = 5 μs sine
1060
A
VF
15 Apk, TJ = 125 °C (per leg)
0.56
V
TJ
Range
-55 to +175
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-30CTQ035SHM3
VS-30CTQ035-1HM3
VS-30CTQ040SHM3
VS-30CTQ040-1HM3
VS-30CTQ045SHM3
VS-30CTQ045-1HM3
UNITS
35
40
45
V
Revision: 19-Nov-14
Document Number: 95804
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CTQ...SHM3, VS-30CTQ...-1HM3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 127 °C, rectangular waveform
UNITS
30
A
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 3.0 A, L = 4.40 mH
20
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3.0
A
Repetitive avalanche current per leg
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
1060
265
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
15 A
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
TJ = 25 °C
30 A
15 A
TJ = 125 °C
30 A
Maximum reverse leakage current per leg
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
VALUES
UNITS
0.62
0.76
0.56
V
0.70
2
15
mA
Maximum junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
900
pF
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
8.0
nH
Maximum voltage rate of change
dV/dt
10 000
V/μs
VALUES
UNITS
-55 to +175
°C
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
RthJC
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
RthCS
DC operation
See fig. 4
3.25
DC operation
1.63
Mounting surface, smooth and greased
0.50
°C/W
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf cm
(lbf in)
Approximate weight
Mounting torque
Case style D2PAK
30CTQ035SH
30CTQ040SH
30CTQ045SH
Case style TO-262
30CTQ035-1H
30CTQ040-1H
30CTQ045-1H
Marking device
Revision: 19-Nov-14
Document Number: 95804
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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