VS-30EPH06-N3

VS-30EPH06-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® FEATURES Common cathode 2, Base • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 1 • Single diode device 3 Available • Designed and qualified according to JEDEC®-JESD 47 TO-247AC 2L 1 Cathode 3 Anode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS 3D 3D State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. 3D Models PRIMARY CHARACTERISTICS IF(AV) 30 A VR 600 V VF at IF 1.34 V trr typ. See Recovery table TJ max. 175 °C Package TO-247AC 2L Circuit configuration Single MECHANICAL DATA Case: TO-247AC 2L Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 116 °C 30 Non-repetitive peak surge current IFSM TJ = 25 °C, tp = 10 ms 300 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 30 A MIN. TYP. MAX. 600 - - - 2.0 2.6 1.75 IF = 30 A, TJ = 150 °C - 1.34 VR = VR rated - 0.3 50 TJ = 150 °C, VR = VR rated - 60 500 UNITS V Reverse leakage current IR Junction capacitance CT VR = 600 V - 33 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH μA Revision: 07-Jun-2022 Document Number: 94018 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH06-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 28 35 UNITS TJ = 25 °C - 31 - TJ = 125 °C - 77 - - 3.5 - - 7.7 - - 65 - - 345 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction to case per leg RthJC - 0.5 0.9 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.4 - - 6.0 - g 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Peak recovery current TJ = 25 °C IRRM Reverse recovery charge TJ = 125 °C TJ = 25 °C Qrr IF = 30 A dIF/dt = 200 A/μs VR = 200 V TJ = 125 °C ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS Weight Mounting torque Marking device Case style TO-247AC 2L 30EPH06 1000 IR - Reverse Current (µA) 1000 IF - Instantaneous Forward Current (A) °C/W 100 TJ = 175 °C TJ = 150 °C TJ = 25 °C 10 1 TJ = 175 °C 100 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 3 3.5 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 07-Jun-2022 Document Number: 94018 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH06-N3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 200 100 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 90 80 Average Power Loss (W) Allowable Case Temperature (°C) 180 160 DC 140 Square wave (D = 0.50) Rated VR applied 120 100 70 RMS limit 60 50 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 40 30 20 10 See note (1) 80 DC 0 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 07-Jun-2022 Document Number: 94018 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH06-N3 www.vishay.com Vishay Semiconductors 1200 90 IF = 30 A IF = 15 A 80 VR = 200 V TJ = 125 °C TJ = 25 °C 1000 70 800 Qrr (nC) trr (ns) 60 50 40 10 600 400 30 20 IF = 30 A IF = 15 A VR = 200 V TJ = 125 °C TJ = 25 °C 200 0 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 07-Jun-2022 Document Number: 94018 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPH06-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 E P H 06 -N3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Circuit configuration: E = single diode 4 - Package: P = TO-247AC 5 - H = hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-30EPH06-N3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96144 Part marking information www.vishay.com/doc?95648 SPICE model www.vishay.com/doc?96573 Revision: 07-Jun-2022 Document Number: 94018 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC 2L DIMENSIONS in millimeters and inches A A E (3) B A2 S R/2 (2) (Datum B) Ø P (6) Ø P1 Ø K M DBM A Q D2 2 x R (2) D1 (4) D Thermal pad 2 1 4 D 3 L1 (5) C L A See view B 2 x b2 2xb 0.10 M C A M C 2x e A1 E1 (4) 0.01 M D B M (b1, b3) Plating View A - A Base metal D D (c) c1 (b, b2) C (4) View B Section C - C, D - D SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 0.38 0.89 0.38 0.84 19.71 20.70 13.08 0.51 1.35 C INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.015 0.035 0.015 0.033 0.776 0.815 0.515 0.020 0.053 NOTES SYMBOL 3 4 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q Revision: 07-Dec-17 Document Number: 96144 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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