VS-EPH3006-N3

VS-APH3006-N3, VS-EPH3006-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® FEATURES • Low forward voltage drop • Hyperfast soft recovery time • 175 °C operating junction temperature 1 • Designed and qualified according to JEDEC®-JESD 47 1 2 3 3 TO-247AC 3L • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-247AC 2L Base cathode 2 Available Base cathode 2 DESCRIPTION / APPLICATIONS 1 Anode 3 Anode 1 Cathode VS-APH3006-N3 Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. 3 Anode The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. VS-EPH3006-N3 These devices are intended for use in PFC Boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. PRIMARY CHARACTERISTICS IF(AV) 30 A VR 600 V VF at IF 1.4 V trr typ. 27 ns The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. TJ max. 175 °C Package TO-247AC 3L, TO-247AC 2L Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 112 °C 30 Non-repetitive peak surge current IFSM TC = 25 °C, tp = 10 ms 220 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance Series inductance TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 2.0 2.65 IF = 30 A, TJ = 150 °C - 1.4 1.8 IR = 100 μA UNITS V VR = VR rated - - 30 TJ = 150 °C, VR = VR rated - - 300 CT VR = 600 V - 20 - pF LS Measured lead to lead 5 mm from package body - 8.0 - nH μA Revision: 28-Nov-2019 Document Number: 93571 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-APH3006-N3, VS-EPH3006-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 26 35 IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V UNITS TJ = 25 °C - 26 - TJ = 125 °C - 70 - - 3.5 - - 7.6 - TJ = 25 °C - 50 - TJ = 125 °C - 280 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction to case RthJC - 0.7 1.1 °C/W Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth, and greased - 0.5 - - 5.5 - g - 0.2 - oz. 1.2 (10) - 2.4 (20) kgf · cm (lbf · in) Reverse recovery time trr Peak recovery current Reverse recovery charge IF = 30 A TJ = 25 °C IRRM TJ = 125 °C Qrr dIF/dt = 200 A/μs VR = 200 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS Weight Mounting torque Case style TO-247AC 3L APH3006 Case style TO-247AC 2L EPH3006 1000 1000 175 °C 100 100 Reverse Current - IR (μA) IF - Instantaneous Forward Current (A) Marking device TJ = 175 °C 10 TJ = 150 °C TJ = 25 °C 1 0.0 150 °C 125 °C 10 100 °C 1 75 °C 0.1 50 °C 25 °C 0.01 0.001 0.0001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VFM - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Nov-2019 Document Number: 93571 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-APH3006-N3, VS-EPH3006-N3 www.vishay.com Vishay Semiconductors Junction Capacitance - CT (pF) 1000 100 10 1 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 10 1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 Single Pulse (Thermal Resistance) D = 0.01 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (s) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics 80 180 RMS Limit 160 Average Power Loss (W) Allowable Case Temperature (°C) 170 150 140 130 120 110 100 60 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 40 20 90 0 80 0 10 20 30 40 50 Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 5 10 15 20 25 30 35 40 45 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics Revision: 28-Nov-2019 Document Number: 93571 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-APH3006-N3, VS-EPH3006-N3 www.vishay.com Vishay Semiconductors 90 900 80 800 700 IF = 30 A, 125 °C 70 600 Qrr (nC) trr (ns) 60 50 40 IF = 30 A, 125 °C 500 400 300 30 IF = 30 A, 25 °C 200 IF = 30 A, 25 °C 10 20 typical value typical value 10 100 0 100 1000 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 28-Nov-2019 Document Number: 93571 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-APH3006-N3, VS-EPH3006-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E P H 30 06 -N3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Circuit configuration • E = single diode, 2 pins • A = single diode, 3 pins 3 - P = TO-247AC 4 - H = hyperfast recovery time 5 - Current code (30 = 30 A) 6 - Voltage code (06 = 600 V) 7 - Environmental digit: -N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY VS-APH3006-N3 25 500 PACKAGING DESCRIPTION Antistatic plastic tube VS-EPH3006-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model TO-247AC 3L www.vishay.com/doc?96138 TO-247AC 2L www.vishay.com/doc?96144 TO-247AC 3L www.vishay.com/doc?95007 TO-247AC 2L www.vishay.com/doc?95442 www.vishay.com/doc?96580 Revision: 28-Nov-2019 Document Number: 93571 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC 3L DIMENSIONS in millimeters and inches A A E (3) B A2 S R/2 (2) (Datum B) Ø P (6) Ø P1 Ø K M DBM A Q D2 2 x R (2) D1 (4) D Thermal pad 2 1 4 D 3 L1 (5) C L A See view B 2 x b2 3xb 0.10 M C A M C 2x e A1 b4 E1 (4) 0.01 M D B M (b1, b3, b5) Plating View A - A Base metal D DE (c) c1 (b, b2, b4) C A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - C (4) View B Section C - C, D - D, E - E SYMBOL E INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q Revision: 20-Jun-17 Document Number: 96138 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC 2L DIMENSIONS in millimeters and inches A A E (3) B A2 S R/2 (2) (Datum B) Ø P (6) Ø P1 Ø K M DBM A Q D2 2 x R (2) D1 (4) D Thermal pad 2 1 4 D 3 L1 (5) C L A See view B 2 x b2 2xb 0.10 M C A M C 2x e A1 E1 (4) 0.01 M D B M (b1, b3) Plating View A - A Base metal D D (c) c1 (b, b2) C (4) View B Section C - C, D - D SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 0.38 0.89 0.38 0.84 19.71 20.70 13.08 0.51 1.35 C INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.015 0.035 0.015 0.033 0.776 0.815 0.515 0.020 0.053 NOTES SYMBOL 3 4 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q Revision: 07-Dec-17 Document Number: 96144 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000