VS-3ECH01-M3
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Vishay Semiconductors
Hyperfast Rectifier, 3 A FRED Pt®
FEATURES
Cathode
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode
SMC (DO-214AB)
LINKS TO ADDITIONAL RESOURCES
DESCRIPTION / APPLICATIONS
3D 3D
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers, and freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element.
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
3A
VR
100 V
VF at IF
0.69 V
trr
25 ns
TJ max.
175 °C
Package
SMC (DO-214AB)
Circuit configuration
Single
MECHANICAL DATA
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Terminals: matte tin plated leads, solderable per
J-STD-002
Polarity: color band denotes cathode end
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TSp = 142 °C
Non-repetitive peak surge current
IFSM
TJ = 25 °C, 6 ms square pulse
Operating junction and storage temperatures
TJ, TStg
VALUES
UNITS
100
V
3
A
130
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
VBR, VR
Forward voltage, per diode
VF
Reverse leakage current, per diode
IR
Junction capacitance
CT
Revision: 13-Apr-2021
TEST CONDITIONS
MIN.
TYP.
MAX.
100
-
-
IF = 3 A
-
0.83
0.90
IF = 3 A, TJ = 125 °C
-
0.69
0.75
IR = 100 μA
VR = VR rated
-
-
2
TJ = 125 °C, VR = VR rated
-
1
10
VR = 100 V
-
23
-
UNITS
V
μA
pF
Document Number: 95834
1
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-3ECH01-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
27
-
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
Reverse recovery time
trr
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
-
-
25
TJ = 25 °C
-
18
-
-
30
-
-
2.1
-
-
4
-
TJ = 125 °C
Peak recovery current
IRRM
Reverse recovery charge
IF = 3 A,
dIF/dt = 200 A/μs,
VR = 160 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
Qrr
UNITS
ns
A
-
19
-
-
60
-
MIN.
TYP.
MAX.
UNITS
-55
-
175
°C
-
7.7
14
°C/W
TJ = 125 °C
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Thermal resistance, junction to mount
Device mounted on PCB with 2 x 3.5 mm
soldering lands
RthJM
Approximate weight
Case style SMC (DO-214AB)
TJ = 175 °C
10
1
0.1
g
oz.
3H1
1000
100
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Marking device
0.24
0.008
TJ = 150°C
TJ = 125°C
TJ = 25 °C
TJ = -40 °C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.001
0
20
40
60
80
100
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 13-Apr-2021
Document Number: 95834
2
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-3ECH01-M3
www.vishay.com
Vishay Semiconductors
100
5
Average Power Loss (W)
CT - Junction Capacitance (pF)
RMS limit
10
4
3
2
1
0
0
50
100
150
200
0
1
2
3
4
5
6
7
VR - Reverse Voltage (V)
IF(AV) - Average Forward Current (A)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 5 - Forward Power Loss Characteristics
180
45
40
170
35
160
30
DC
trr (ns)
Allowable Case Temperature (°C)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
150
20
Square wave (D = 0.50)
Rated VR applied
140
125 °C
25
15
130
25 °C
10
See note (1)
120
5
0
0.5
1
1.5
2
2.5
3
3.5
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
120
100
125 °C
Qrr (nC)
80
60
40
25 °C
20
0
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 13-Apr-2021
Document Number: 95834
3
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-3ECH01-M3
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
3
E
C
H
01
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current code (3 = 3 A)
3
-
Circuit configuration:
E = single diode
4
-
C = SMC package
5
-
Process type,
6
-
Voltage code (01 = 100 V)
7
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
H = hyperfast recovery
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-3ECH01-M3/9AT
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
3500
3500
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95402
Part marking information
www.vishay.com/doc?95472
Packaging information
www.vishay.com/doc?95404
Revision: 13-Apr-2021
Document Number: 95834
4
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMC
DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 95402
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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Revision: 01-Jan-2022
1
Document Number: 91000