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VS-3ECH01HM3/9AT

VS-3ECH01HM3/9AT

  • 厂商:

    TFUNK(威世)

  • 封装:

    SMC(DO-214AB)

  • 描述:

    DIODE GEN PURP 100V 3A SMC

  • 数据手册
  • 价格&库存
VS-3ECH01HM3/9AT 数据手册
VS-3ECH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 3 A FRED Pt® FEATURES Cathode • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Specified for output and snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode SMC (DO-214AB) LINKS TO ADDITIONAL RESOURCES 3D 3D DESCRIPTION / APPLICATIONS 3D Models State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. PRIMARY CHARACTERISTICS IF(AV) 3A VR 100 V VF at IF 0.69 V trr 25 ns TJ max. 175 °C Package SMC (DO-214AB) Circuit configuration Single MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TSp = 142 °C Non-repetitive peak surge current IFSM TJ = 25 °C, 6 ms square pulse Operating junction and storage temperatures TJ, TStg VALUES UNITS 100 V 3 A 130 -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage, per diode VF Reverse leakage current, per diode IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 100 - - IF = 3 A - 0.83 0.90 IF = 3 A, TJ = 125 °C - 0.69 0.75 IR = 100 μA VR = VR rated - - 2 TJ = 125 °C, VR = VR rated - 1 10 VR = 100 V - 23 - UNITS V μA pF Revision: 13-Apr-2021 Document Number: 95835 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3ECH01HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 27 - IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25 TJ = 25 °C - 18 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge TJ = 125 °C TJ = 25 °C Qrr ns - 30 - - 2.1 - - 4 - - 19 - - 60 - MIN. TYP. MAX. UNITS -55 - 175 °C - 7.7 14 °C/W IF = 3 A, dIF/dt = 200 A/μs, VR = 100 V TJ = 25 °C UNITS TJ = 125 °C A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Thermal resistance, junction to mount Device mounted on PCB with 2 x 3.5 mm soldering lands RthJM Approximate weight 3H1 1000 100 TJ = 175 °C 10 1 0.1 g oz. Case style SMC (DO-214AB) IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device 0.24 0.008 TJ = 150°C TJ = 125°C TJ = 25 °C TJ = -40 °C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0 20 40 60 80 100 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 13-Apr-2021 Document Number: 95835 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3ECH01HM3 www.vishay.com Vishay Semiconductors 100 5 Average Power Loss (W) CT - Junction Capacitance (pF) RMS limit 10 3 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 2 1 0 0 50 100 150 200 0 1 2 3 4 5 6 7 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 180 45 40 170 35 160 30 DC trr (ns) Allowable Case Temperature (°C) 4 150 20 Square wave (D = 0.50) Rated VR applied 140 125 °C 25 15 130 25 °C 10 See note (1) 120 5 0 0.5 1 1.5 2 2.5 3 3.5 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 120 100 125 °C Qrr (nC) 80 60 25 °C 40 20 0 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 13-Apr-2021 Document Number: 95835 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3ECH01HM3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 3 E C H 01 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current code (3 = 3 A) 3 - Circuit configuration: E = single diode 4 - C = SMC package 5 - Process type, H = hyperfast recovery 6 - Voltage code (01 = 100 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-3ECH01HM3/9AT QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 3500 3500 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95402 Part marking information www.vishay.com/doc?95472 Packaging information www.vishay.com/doc?95404 Revision: 13-Apr-2021 Document Number: 95835 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMC DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Document Number: 95402 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
VS-3ECH01HM3/9AT 价格&库存

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