VS-40CTQ045-1-M3

VS-40CTQ045S-M3, VS-40CTQ045-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A FEATURES • 150 °C TJ operation • Center tap configuration • Very low forward voltage drop 2 • High frequency operation 1 1 3 D2PAK (TO-263AB) 2 • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance TO-262AA 3 • Guard ring for enhanced ruggedness and long term reliability Base common cathode 2 Base common cathode 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Designed and qualified according to JEDEC®-JESD 47 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode VS-40CTQ045S-M3 VS-40CTQ045-1-M3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VR 45 V VF at IF 0.48 V IRM typ. 115 mA at 125 °C TJ max. 150 °C EAS 20 mJ Package D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 20 Apk, TJ = 125 °C (per leg) TJ Range VALUES UNITS 40 A 45 V 1240 A 0.48 V -55 to +150 °C VS-40CTQ045S-M3 VS-40CTQ045-1-M3 UNITS 45 V VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM Revision: 21-Dec-2021 Document Number: 94935 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40CTQ045S-M3, VS-40CTQ045-1-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL TEST CONDITIONS per leg VALUES UNITS 20 IF(AV) per device 50 % duty cycle at TC = 116 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 40 1240 A Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 3 A, L = 4.40 mH 20 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 3 A TEST CONDITIONS VALUES UNITS 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 350 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 20 A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 °C 40 A 20 A TJ = 125 °C 40 A Maximum reverse leakage current per leg IRM (1) Typical reverse leakage current IRM (1) Threshold voltage VF(TO) Forward slope resistance rt TJ = 25 °C VR = Rated VR TJ = 125 °C TJ = 125 °C VR = Rated VR TJ = TJ maximum Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance per leg LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Rated VR 0.53 0.68 0.48 V 0.67 3 150 115 mA mA 0.27 V 8.72 mΩ 2800 pF 8.0 nH 10 000 V/μs VALUES UNITS -55 to 150 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg 2.0 RthJC Maximum thermal resistance, junction to case per package DC operation 1.0 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth, and greased Marking device 0.50 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf ⋅ cm (lbf ⋅ in) Approximate weight Mounting torque °C/W Case style D2PAK (TO-263AB) 40CTQ045S Case style TO-262AA 40CTQ045-1 Revision: 21-Dec-2021 Document Number: 94935 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40CTQ045S-M3, VS-40CTQ045-1-M3 Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 150 °C 100 TJ = 125 °C TJ = 100 °C 10 TJ = 75 °C 1 TJ = 50 °C 0.1 TJ = 25 °C 0.01 0.001 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 10 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 21-Dec-2021 Document Number: 94935 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40CTQ045S-M3, VS-40CTQ045-1-M3 Vishay Semiconductors 150 18 145 16 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com 140 DC 135 130 125 120 Square wave (D = 0.50) 80 % rated VR applied 115 110 105 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 14 12 RMS limit 10 8 6 DC 4 2 See note (1) 0 100 0 5 10 15 20 25 0 30 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V (1) Revision: 21-Dec-2021 Document Number: 94935 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40CTQ045S-M3, VS-40CTQ045-1-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 40 C T Q 045 S 1 2 3 4 5 6 7 TRL -M3 8 1 - Vishay Semiconductors product 2 - Current rating (40 A) 3 - Circuit configuration: C = common cathode 4 - T = TO-220 5 - Schottky “Q” series 6 - Voltage rating (045 = 45 V) 7 - S = D2PAK (TO-263AB) 9 -1 = TO-262AA 8 - None = tube TRL = tape and reel (left oriented - for D2PAK (TO-263AB) only) TRR = tape and reel (right oriented - for D2PAK (TO-263AB) only) 9 - -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-40CTQ045S-M3 50 Antistatic plastic tubes VS-40CTQ045STRL-M3 800 13" diameter plastic tape and reel VS-40CTQ045STRR-M3 800 13" diameter plastic tape and reel VS-40CTQ045-1-M3 50 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information D2PAK (TO-263AB) www.vishay.com/doc?96164 TO-262AA www.vishay.com/doc?96165 D2PAK (TO-263AB) www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 www.vishay.com/doc?96424 Revision: 21-Dec-2021 Document Number: 94935 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0° to 8° Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC® outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-262 DIMENSIONS in millimeters and inches Modified JEDEC® outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 NOTES A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e L 2.54 BSC 4 4 4 2 0.100 BSC 13.46 14.10 0.530 0.555 L1 - L2 3.36 1.65 - 0.065 3.71 0.132 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) (5) (6) 3 Dimension b1 and c1 apply to base metal only Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) , D1 (minimum) and L2 where dimensions derived the actual package outline Revision: 11-Jul-2019 Document Number: 95419 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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