VS-45L60

VS-45L(R), VS-150K(R), VS-150KS(R) Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 150 A FEATURES • Alloy diode • High current carrying capability • High surge current capabilities • Stud cathode and stud anode version • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DO-8 (DO-205AA) TYPICAL APPLICATIONS • Battery chargers • Welders PRIMARY CHARACTERISTICS • Machine tool controls IF(AV) 150 A Package DO-8 (DO-205AA) Circuit configuration Single • High power drives • Medium traction applications • Freewheeling diodes MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) I2t A TC 150 °C 235 A 50 Hz 3570 60 Hz 3740 50 Hz 64 60 Hz 58 Range VRRM UNITS 150 IF(RMS) IFSM VALUES TJ A kA2s 100 to 600 V -40 to +200 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-45L(R) VS-150K(R) VS-150KS(R) VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 10 100 200 20 200 300 30 300 400 40 400 500 60 600 720 IRRM MAXIMUM AT TJ = 175 °C mA 35 Revision: 11-Jan-18 Document Number: 93489 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-45L(R), VS-150K(R), VS-150KS(R) Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at case temperature Maximum RMS forward current TEST CONDITIONS IF(AV) 180° conduction, half sine wave IF(RMS) DC at 142 °C case temperature IFSM t = 8.3 ms 100 % VRRM reapplied t = 10 ms t = 8.3 ms No voltage  reapplied t = 10 ms Maximum I2t for fusing I 2t Maximum I2t for fusing I2t t = 8.3 ms t = 8.3 ms A 150 °C 3570 A 3740 3000 Sinusoidal half wave, initial TJ = TJ maximum 3140 64 58 100 % VRRM reapplied t = 10 ms UNITS 150 235 No voltage  reapplied t = 10 ms Maximum peak, one cycle forward, non-repetitive surge current VALUES kA2s 45 41 t = 0.1 to 10 ms, no voltage reapplied 640 Low level value of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.67 High level value of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ = TJ maximum 0.83 kA2s V Low level value of forward slope resistance rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 1.42 High level value of forward slope resistance rf2 (I >  x IF(AV)), TJ = TJ maximum 0.91 Ipk = 471 A, TJ = 25 °C, tp = 10 ms sinusoidal wave 1.33 V VALUES UNITS -40 to 200 °C mW Maximum forward voltage drop VFM THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction operating and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation 0.25 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.10 K/W minimum Mounting torque 45L minimum 17.0 (150) 12.2 (108) Lubricated threads maximum minimum Mounting torque 150K 150KS 14.1 (125) Not lubricated threads maximum 15.0 (132) 11.3 (100) Not lubricated threads maximum minimum 14.1 (125) 9.5 (85) Lubricated threads maximum N·m (lbf · in) 12.5 (110) Approximate weight 45L Case style N·m (lbf · in) 100 g 3.5 oz. DO-30 (DO-205AC) 150K-A See dimensions - link at the end of datasheet DO-8 (DO-205AA) 150KS B-42 RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.031 0.023 120° 0.038 0.040 90° 0.048 0.053 60° 0.071 0.075 30° 0.120 0.121 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93489 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-45L(R), VS-150K(R), VS-150KS(R) Series Vishay Semiconductors 200 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 45L...,150... Series RthJC (DC) = 0.25 K/ W 190 180 Conduction Angle 170 160 30° 150 60° 90° 120° 180° 140 0 20 40 60 80 100 120 140 160 200 45L..., 150... Series R thJC (DC) = 0.25 K/ W 190 180 Conduction Period 170 160 30° 180° 140 0 50 Average Forward Current (A) 250 1 K/ W .1 =0 SA R th K/ W 0.2 W K/ 0.3 W K/ K/ W K/ W RMS Limit 100 elt -D 1.5 K/ W 80 aR Maximum Average Forward Power Loss (W) 200 4 0. 0. 8 W K/ 120 6 0. 140 150 Fig. 2 - Current Ratings Characteristics 180° 120° 90° 60° 30° 160 100 DC Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 180 60° 90° 120° 150 2K /W 60 Conduction Angle 40 45L..., 150... Series TJ = 200°C 20 3 K/ W 0 0 40 80 120 160 25 Average Forward Current (A) 50 75 100 125 150 175 200 Maximum Allowable Ambient Temperature (°C) 250 R th 2 0. SA K/ W W K/ .1 =0 W K/ a e lt -D 0. 8 K/ W 1K /W RMS Limit 1.5 Conduc tion Period 45L..., 150... Series TJ = 200°C 50 2 K/ R 100 W K/ 150 0. 6 W K/ 200 4 0. DC 180° 120° 90° 60° 30° 3 0. Maximum Average Forward Power Loss (W) Fig. 3 - Forward Power Loss Characteristics K/ W W 3 K/W 0 0 50 100 150 200 Average Forward Current (A) 250 25 50 75 100 125 150 175 200 Maximum Allowable Ambient Temperature (°C) Fig. 4 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93489 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-45L(R), VS-150K(R), VS-150KS(R) Series 3500 Vishay Semiconductors Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) www.vishay.com At Any Ra ted Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 200°C @60 Hz 0.0083 s @50 Hz 0.0100 s 3000 2500 2000 1500 1000 45L..., 150... Series 500 1 10 100 4000 3500 3000 Maximum Non Repetitive Surge Current Versus Pulse Train Dura tion. Initial TJ = 200°C No Voltage Reapplied Rated VRRM Reapplied 2500 2000 1500 1000 45L..., 150... Series 500 0.01 Numb er Of Equal Amplitude Half Cycle Current Pulses (N) 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) 10000 1000 TJ = 25°C 100 TJ = 200°C 45L...,150... Series 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous Forward Voltage (V) Transient Thermal Impedance ZthJC (K/W) Fig. 7 - Forward Voltage Drop Characteristics 1 Steady State Value RthJC = 0.25 K7W (DC Operation) 0.1 45L..., 150... Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 11-Jan-18 Document Number: 93489 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-45L(R), VS-150K(R), VS-150KS(R) Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 45 L R 60 1 2 3 4 5 1 - Vishay Semiconductors product 2 - 45 = standard version 3 - L = essential part number 4 - R = stud reverse polarity (anode to stud) None = stud normal polarity (cathode to stud) 5 - Voltage code x 10 = VRRM (see Voltage Ratings table) Device code VS- 15 0 K R 60 A 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - 15 = essential part number 3 - 0 = standard device 4 - Case style: K = DO-8 (DO-205AA) KS = B-42 5 - R = stud reverse polarity (anode to stud) None = stud normal polarity (cathode to stud) 6 - Voltage code x 10 = VRRM (see Voltage Ratings table) 7 - A = essential part number for 150K (omitted for 150KS) Note • For metric device M12 x 1.75 contact factory LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95314 Revision: 11-Jan-18 Document Number: 93489 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DO-205AC (DO-30), DO-205AA (DO-8) and B-42 for 45L(R), 150K(R) and 150KS(R) Series DIMENSIONS FOR 45L(R) SERIES - DO-205AC (DO-30) in millimeters (inches) 15.30 (0.60) MAX. Ø 7.39 (0.297) Ø 6.50 (0.255) 8.30 (0.327) 7.55 (0.297) 17.30 (0.681) 11.70 (0.460) Ø 23.30 (0.92) MAX. 137.67 (5.42) 132.58 (5.22) 23.30 (0.917) MAX. 8.48 (0.333) 7.88 (0.310) 17.0 (0.67) 15.0 (0.59) 27.00 (1.06) MAX. Across flats 1/2"-20UNF-2A Revision: 29-Feb-16 Document Number: 95314 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS FOR 150K(R) SERIES - DO-205AA (DO-8) in millimeters (inches) 15.30 (0.60) MAX. Ø 7.39 (0.297) Ø 6.50 (0.255) 17.30 (0.681) 11.70 (0.460) Ø 23.30 (0.92) MAX. 124.00 (4.881) 111.13 (4.375) 23.30 (0.917) MAX. 8.48 (0.333) 7.88 (0.310) 17.0 (0.67) 15.0 (0.59) 27.00 (1.06) MAX. Across flats 3/8"-24UNF-2A (1) Note (1) For metric device M12 x 1.75 contact factory Revision: 29-Feb-16 Document Number: 95314 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS FOR 150KS(R) SERIES - B-42 in millimeters (inches) 27.17 (1.070) 26.22 (1.032) 2.03 (0.080) 1.27 (0.050) 21.47 (0.843) 21.20 (0.835) 10.2 (0.401) 9.2 (0.362) Ø 4.34 (0.171) Ø 4.09 (0.161) 4.08 (0.161) 3.70 (0.146) 9.50 (0.374) 7.50 (0.295) 37.13 (1.462) 33.83 (1.332) 18.00 (0.708) 14.00 (0.551) 6.76 (0.266) 6.25 (0.246) 12.50 (0.492) 11.70 (0.460) 3/8"-24UNF-2A Revision: 29-Feb-16 Document Number: 95314 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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