VS-ETH3006-1HM3

VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current TO-263AB (D2PAK) • AEC-Q101 qualified, meets JESD 201 class 1A whisker test TO-262AA Base cathode 2 • Meets MSL level 1, per LF maximum peak of 260 °C 2 J-STD-020, • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 Anode 1 N/C 3 Anode 1 N/C VS-ETH3006SHM3 DESCRIPTION / APPLICATIONS Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. VS-ETH3006-1HM3 PRODUCT SUMMARY The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. TO-263AB (D2PAK), TO-262AA Package IF(AV) 30 A VR 600 V VF at IF 1.4 V trr (typ.) 27 ns TJ max. 175 °C Diode variation Single die These devices are intended for use in PFC Boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 95 °C 30 Non-repetitive peak surge current IFSM TC = 25 °C 180 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 2.0 2.65 IF = 30 A, TJ = 150 °C - 1.4 1.8 VR = VR rated - 0.02 30 TJ = 150 °C, VR = VR rated - 50 300 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 20 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH μA Revision: 10-Jul-15 Document Number: 94425 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current SYMBOL trr IRRM MIN. TYP. MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V TEST CONDITIONS - 26 35 TJ = 25 °C - 26 - TJ = 125 °C - 70 - - 3.5 - - 7.6 - TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = 200 A/μs VR = 200 V UNITS ns A TJ = 25 °C - 50 - TJ = 125 °C - 280 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction to case RthJC - 0.95 1.4 °C/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 70 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - g - 0.07 - oz. 6 (5) - 12 (10) kgf · cm (lbf · in) Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device Case style TO-263AB (D2PAK) ETH3006SH Case style TO-262AA ETH3006-1H Revision: 10-Jul-15 Document Number: 94425 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors 1000 1000 175 °C Reverse Current - IR (μA) 100 125 °C 10 100 °C 1 75 °C 0.1 50 °C 0.01 25 °C 0.001 TJ = 175 °C 0.0001 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 10 TJ = 150 °C Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) 100 150 °C TJ = 25 °C 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 100 10 1 3.5 0 100 Forward Voltage Drop - VFM (V) 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 10 D = 0.5 1 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 Single Pulse (Thermal Resistance) D = 0.01 0.01 1E-051 E-041 E-031 E-021 E-01 1E+00 t1, Rectangular Pulse Duration (s) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics Revision: 10-Jul-15 Document Number: 94425 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors 80 180 RMS Limit 160 Average Power Loss (W) Allowable Case Temperature (°C) 170 150 140 130 120 DC 110 100 90 60 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 40 20 80 0 70 0 5 10 15 20 25 30 35 40 0 45 5 10 15 20 25 30 35 40 Average Forward Current - IF(AV) (A) Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics 45 900 90 800 80 700 IF = 30 A, 125 °C 70 600 IF = 30 A, 125 °C 60 trr (nC) trr (ns) 500 50 40 400 300 IF = 30 A, 25 °C 30 200 IF = 30 A, 25 °C 10 20 typical value typical value 10 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 0 100 1000 dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Revision: 10-Jul-15 Document Number: 94425 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 10-Jul-15 Document Number: 94425 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH3006SHM3, VS-ETH3006-1HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E T H 30 06 S TRL H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - 3 - Circuit configuration E = single diode T = TO-220 4 - H = hyperfast recovery time 5 - Current code (30 = 30 A) 6 - Voltage code (06 = 600 V) 7 - • S = D2PAK - • -1 = TO-262 - • None = tube - • TRL = tape and reel (left oriented, for D2PAK package) - • TRR = tape and reel (right oriented, for D2PAK package) 9 - H = AEC-Q101 qualified 10 - Environmental digit: 8 -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-ETH3006SHM3 50 1000 Antistatic plastic tube VS-ETH3006-1HM3 50 1000 Antistatic plastic tube VS-ETH3006STRRHM3 800 800 13" diameter reel VS-ETH3006STRLHM3 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information TO-263AB (D2PAK) www.vishay.com/doc?95046 TO-262AA www.vishay.com/doc?95419 TO-263AB (D2PAK) www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 TO-263AB (D2PAK) www.vishay.com/doc?95032 Revision: 10-Jul-15 Document Number: 94425 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0° to 8° Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC® outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-262 DIMENSIONS in millimeters and inches Modified JEDEC® outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 NOTES A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e L 2.54 BSC 4 4 4 2 0.100 BSC 13.46 14.10 0.530 0.555 L1 - L2 3.36 1.65 - 0.065 3.71 0.132 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) (5) (6) 3 Dimension b1 and c1 apply to base metal only Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) , D1 (minimum) and L2 where dimensions derived the actual package outline Revision: 11-Jul-2019 Document Number: 95419 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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