VS-FB180SA10P

Not Available for New Designs, Use VS-FB190SA10 FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance • Low internal inductance • UL pending • Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY DESCRIPTION VDSS 100 V ID DC 180 A RDS(on) 0.0065  Type Modules - MOSFET Package SOT-227 5th Generation, high current density Power MOSFETs are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low on resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately 500 W. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Continuous drain current at VGS 10 V ID TEST CONDITIONS 180 TC = 100 °C 120 IDM (1) Pulsed drain current Power dissipation PD UNITS A 720 TC = 25 °C Linear derating factor Gate to source voltage MAX. TC = 25 °C 480 W 2.7 W/°C VGS ± 20 V Single pulse avalanche energy EAS (2) 700 mJ Avalanche current IAR (1) 180 A (1) 48 mJ Peak diode recovery dV/dt dV/dt (3) 5.7 V/ns Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C VISO 2.5 kV 1.3 Nm Repetitive avalanche energy Insulation withstand voltage (AC-RMS) Mounting torque EAR M4 screw Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8) (2) Starting T = 25 °C, L = 43 μH, R = 25 , I J g AS = 180 A (see fig. 12) (3) I  180 A, dI/dt  83 A/μs, V SD DD  V(BR)DSS, TJ  150 °C Document Number: 94541 Revision: 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Not Available for New Designs, Use VS-FB190SA10 FB180SA10P Power MOSFET, 180 A Vishay Semiconductors THERMAL RESISTANCE PARAMETER SYMBOL TYP. MAX. Junction to case RthJC - 0.26 Case to sink, flat, greased surface RthCS 0.05 - UNITS °C/W ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance Gate threshold voltage Forward transconductance V(BR)DSS V(BR)DSS/TJ TYP. MAX. UNITS 100 - - V - 0.093 - V/°C VGS = 10 V, ID = 180 A - 0.0065 -  VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V gfs VDS = 25 V, ID = 180 A 93 - - S - - 50 - - 500 IDSS Gate to source forward leakage IGSS Total gate charge Qg Gate to source charge Qgs Gate to drain ("Miller") charge Qgd Turn-on delay time td(on) tr Turn-off delay time Reference to 25 °C, ID = 1 mA MIN. RDS(on) (1) Drain to source leakage current Rise time TEST CONDITIONS VGS = 0 V, ID = 250 μA td(off) VDS = 100 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 125 °C VGS = 20 V - - 200 VGS = - 20 V - - - 200 ID = 180 A VDS = 80 V VGS = 10.0 V; see fig. 6 and 13 (1) - 250 380 - 40 60 - 110 165 - 45 - - 351 - - 181 - VDD = 50 V ID = 180 A Rg = 2.0(internal) RD = 0.27, see fig. 10 (1) μA nA nC ns Fall time tf - 335 - Internal source inductance LS Between lead, and center of die contact - 5.0 - Input capacitance Ciss - 10 700 - Output capacitance Coss - 2800 - Reverse transfer capacitance Crss VGS = 0 V VDS = 25 V f = 1.0 MHz, see fig. 5 - 1300 - MIN. TYP. MAX. - - 180 - - 720 - - 1.3 - 300 450 ns - 2.6 3.9 μC nH pF Note (1) Pulse width  300 μs, duty cycle  2 % SOURCE-DRAIN RATINGS AND CHARACTERISTICS PARAMETER SYMBOL Continuous source current (body diode) IS TEST CONDITIONS D Pulsed source current (body diode) ISM (1) MOSFET symbol showing the integral reverse p-n junction diode. Diode forward voltage VSD (2) TJ = 25 °C, IS = 180 A, VGS = 0 V Reverse recovery time trr A G S (2) Reverse recovery charge Qrr Forward turn-on time ton UNITS TJ = 25 °C, IF = 180 A; dI/dt = 100 A/μs V Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) Notes Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8) (2) Pulse width  300 μs, duty cycle  2 % (1) www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94541 Revision: 30-Jul-10 Not Available for New Designs, Use VS-FB190SA10 FB180SA10P Power MOSFET, 180 A 2.5 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) TOP 100 4.5V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 R DS(on) , Drain-to-Source On Resistance (Normalized) 1000 Vishay Semiconductors 100 ID = 180A 2.0 1.5 1.0 0.5 1000 0 VGS = Ciss = Crss = Coss = C, Capacitance (pF) I D , Drain-to-Source Current (A) TOP 100 4.5V 10 10 Coss Crss 0 1 100 20 VGS , Gate-to-Source Voltage (V) I D , Drain-to-Source Current (A) TJ = 150 ° C 100 TJ = 25 ° C 10 V DS = 25V 20µs PULSE WIDTH 6 7 8 9 ID = 180 A VDS = 80V VDS = 50V VDS = 20V 15 10 5 FOR TEST CIRCUIT SEE FIGURE 13 0 10 VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics Document Number: 94541 Revision: 30-Jul-10 100 Fig. 5 - Typical Capacitance vs. Drain to Source Voltage 1000 5 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics 4 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 10000 VDS , Drain-to-Source Voltage (V) 1 80 100 120 140 160 Ciss 20μs PULSE WIDTH TJ = 150 °C 1 60 15000 5000 1 0.1 40 Fig. 4 - Normalized On-Resistance vs. Temperature 20000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 20 TJ , Junction Temperature( ° C) VDS , Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics VGS = 10V 0.0 -60 -40 -20 0 50 100 150 200 250 300 350 400 Q G , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate to Source Voltage For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Not Available for New Designs, Use VS-FB190SA10 FB180SA10P Power MOSFET, 180 A Vishay Semiconductors 1000 200 100 150 I D , Drain Current (A) ISD , Reverse Drain Current (A) 175 TJ = 150 ° C 125 100 10 TJ = 25 ° C 75 50 1 25 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 0 25 1.8 50 75 100 125 150 TC , Case Temperature ( ° C) VSD ,Source-to-Drain Voltage (V) Fig. 7 - Typical Source Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 RD I D , Drain Current (A) VDS 10us VGS 100us 100 D.U.T. RG + - VDD 1ms 10 V 10ms 10 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % TC = 25 ° C TJ = 150 ° C Single Pulse 1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 10a - Switching Time Test Circuit Fig. 8 - Maximum Safe Operating Area VDS 90% 10% VGS td(on) tr t d(off) tf Fig. 10b - Switching Time Waveforms www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94541 Revision: 30-Jul-10 Not Available for New Designs, Use VS-FB190SA10 FB180SA10P Power MOSFET, 180 A Vishay Semiconductors Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 P DM 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case EAS , Single Pulse Avalanche Energy (mJ) 1500 ID 71A 100A BOTTOM 160A TOP 1200 15 V L VDS D.U.T RG IAS 20 V tp Driver + - VDD 0.01 Ω A 900 600 300 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current V (B R )D S S QG tp 10 V QGS QGD VG IAS Charge Fig. 12b - Unclamped Inductive Waveforms Document Number: 94541 Revision: 30-Jul-10 Fig. 13a - Basic Gate Charge Waveform For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 Not Available for New Designs, Use VS-FB190SA10 FB180SA10P Power MOSFET, 180 A Vishay Semiconductors Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 12 V 0.3 µF + V - DS D.U.T. VGS 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 RG • • • • + dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - Device under test - VDD Fig. 13c - Peak Diode Recovery dV/dt Test Circuit Driver Gate Drive P.W. D= Period P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig. 14 - For N-Channel Power MOSFETs www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94541 Revision: 30-Jul-10 Not Available for New Designs, Use VS-FB190SA10 FB180SA10P Power MOSFET, 180 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code F B 180 S A 10 P 1 2 3 4 5 6 7 1 - Power MOSFET 2 - Generation 5 MOSFET silicon DBC construction 3 - Current rating (180 = 180 A) 4 - Single switch 5 - SOT-227 6 - Voltage rating (10 = 100 V) 7 - P = Lead (Pb)-free CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D (3) Lead assignment S Single switch no diode S G (2) D 4 3 1 2 S (1-4) S G LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 Document Number: 94541 Revision: 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000