FB180SA10P

FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance • Low internal inductance • UL pending • Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY VDSS ID DC RDS(on) Type Package 100 V 180 A 0.0065  Modules - MOSFET SOT-227 DESCRIPTION 5th Generation, high current density Power MOSFETs are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low on resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately 500 W. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER Continuous drain current at VGS 10 V Pulsed drain current Power dissipation Linear derating factor Gate to source voltage Single pulse avalanche energy Avalanche current Repetitive avalanche energy Peak diode recovery dV/dt Operating junction and storage temperature range Insulation withstand voltage (AC-RMS) Mounting torque VGS EAS (2) IAR (1) EAR (1) SYMBOL ID IDM (1) PD TEST CONDITIONS TC = 25 °C TC = 100 °C TC = 25 °C MAX. 180 120 720 480 2.7 ± 20 700 180 48 5.7 - 55 to + 150 2.5 UNITS A W W/°C V mJ A mJ V/ns °C kV Nm dV/dt (3) TJ, TStg VISO M4 screw 1.3 Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8) (2) Starting T = 25 °C, L = 43 μH, R = 25 , I J g AS = 180 A (see fig. 12) (3) I  180 A, dI/dt  83 A/μs, V SD DD  V(BR)DSS, TJ  150 °C Document Number: 94541 Revision: 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 FB180SA10P Vishay Semiconductors Power MOSFET, 180 A THERMAL RESISTANCE PARAMETER Junction to case Case to sink, flat, greased surface SYMBOL RthJC RthCS TYP. 0.05 MAX. 0.26 UNITS °C/W ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance Gate threshold voltage Forward transconductance Drain to source leakage current SYMBOL V(BR)DSS V(BR)DSS/TJ RDS(on) (1) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss TEST CONDITIONS VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VGS = 10 V, ID = 180 A VDS = VGS, ID = 250 μA VDS = 25 V, ID = 180 A VDS = 100 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 125 °C VGS = 20 V VGS = - 20 V ID = 180 A VDS = 80 V VGS = 10.0 V; see fig. 6 and 13 (1) VDD = 50 V ID = 180 A Rg = 2.0(internal) RD = 0.27, see fig. 10 (1) Between lead, and center of die contact VGS = 0 V VDS = 25 V f = 1.0 MHz, see fig. 5 MIN. 100 2.0 93 TYP. 0.093 0.0065 250 40 110 45 351 181 335 5.0 10 700 2800 1300 MAX. 4.0 50 500 200 - 200 380 60 165 pF nH ns nC UNITS V V/°C  V S μA Gate to source forward leakage Total gate charge Gate to source charge Gate to drain ("Miller") charge Turn-on delay time Rise time Turn-off delay time Fall time Internal source inductance Input capacitance Output capacitance Reverse transfer capacitance Note (1) Pulse width  300 μs, duty cycle  2 % nA SOURCE-DRAIN RATINGS AND CHARACTERISTICS PARAMETER Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge Forward turn-on time SYMBOL IS ISM (1) VSD (2) trr (2) TEST CONDITIONS D MIN. S TYP. 300 2.6 MAX. 180 UNITS MOSFET symbol showing the integral reverse p-n junction diode. A G 720 1.3 450 3.9 V ns μC TJ = 25 °C, IS = 180 A, VGS = 0 V TJ = 25 °C, IF = 180 A; dI/dt = 100 A/μs - Qrr ton Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) Notes Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8) (2) Pulse width  300 μs, duty cycle  2 % (1) www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94541 Revision: 30-Jul-10 FB180SA10P Power MOSFET, 180 A Vishay Semiconductors 1000 TOP R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 2.5 ID = 180A 2.0 100 1.5 4.5V 10 1.0 0.5 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VDS , Drain-to-Source Voltage (V) TJ , Junction Temperature( ° C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 1000 20000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd C, Capacitance (pF) 15000 100 Ciss 10000 4.5V Coss 5000 10 Crss 1 0.1 20μs PULSE WIDTH TJ = 150 °C 1 10 100 0 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain to Source Voltage 20 1000 ID = 180 A VDS = 80V VDS = 50V VDS = 20V I D , Drain-to-Source Current (A) TJ = 150 ° C VGS , Gate-to-Source Voltage (V) V DS = 25V 20µs PULSE WIDTH 15 100 TJ = 25 ° C 10 10 5 1 4 5 6 7 0 10 0 50 100 150 200 FOR TEST CIRCUIT SEE FIGURE 13 250 300 350 400 8 9 VGS , Gate-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate to Source Voltage Document Number: 94541 Revision: 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 FB180SA10P Vishay Semiconductors 1000 Power MOSFET, 180 A 200 175 ISD , Reverse Drain Current (A) 10 I D , Drain Current (A) V GS = 0 V 100 TJ = 150 ° C 150 125 100 75 50 25 TJ = 25 ° C 1 0.1 0.2 0 0.6 1.0 1.4 1.8 25 50 75 100 125 150 VSD ,Source-to-Drain Voltage (V) TC , Case Temperature ( ° C) Fig. 7 - Typical Source Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 10us I D , Drain Current (A) VDS VGS 100us 1ms RD D.U.T. + - VDD 100 RG 10 10ms 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1 1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Fig. 10a - Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig. 10b - Switching Time Waveforms www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94541 Revision: 30-Jul-10 FB180SA10P Power MOSFET, 180 A Vishay Semiconductors 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case EAS , Single Pulse Avalanche Energy (mJ) 1500 1200 ID 71A 100A BOTTOM 160A TOP 15 V 900 VDS RG 20 V L Driver 600 D.U.T IAS tp 0.01 Ω + - VDD A 300 0 25 50 75 100 125 150 Starting T , Junction Temperature ( ° C) J Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current V (B R )D S S tp QG 10 V QGS VG QGD IAS Fig. 12b - Unclamped Inductive Waveforms Charge Fig. 13a - Basic Gate Charge Waveform Document Number: 94541 Revision: 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 FB180SA10P Vishay Semiconductors Power MOSFET, 180 A Current regulator Same type as D.U.T. 50 kΩ 12 V 0.2 µF 0.3 µF + V - DS D.U.T. VGS 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit D.U.T. + 3 Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + 2 - - 4 + 1 RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - Device under test + VDD Fig. 13c - Peak Diode Recovery dV/dt Test Circuit Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig. 14 - For N-Channel Power MOSFETs www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94541 Revision: 30-Jul-10 FB180SA10P Power MOSFET, 180 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code F 1 1 2 3 4 5 6 7 - B 2 180 3 S 4 A 5 10 6 P 7 Power MOSFET Generation 5 MOSFET silicon DBC construction Current rating (180 = 180 A) Single switch SOT-227 Voltage rating (10 = 100 V) P = Lead (Pb)-free CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead assignment S D 3 2 S G D (3) Single switch no diode S G (2) 4 1 S (1-4) LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037 Document Number: 94541 Revision: 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.40 (0.173) Ø 4.20 (0.165) 4 4 x M4 nuts -A3 6.25 (0.246) 12.50 (0.492) 1 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 2 R full 25.70 (1.012) 25.20 (0.992) -BChamfer 2.00 (0.079) x 45° 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C0.12 (0.005) 12.30 (0.484) 11.80 (0.464) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1