VS-GB90DA60U

VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Fully isolated package • Very low internal inductance ( 5 nH typical) SOT-227 • Industry standard outline • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY BENEFITS VCES 600 V IC DC 90 A at 90 °C VCE(on) typical at 100 A, 25 °C 2.40 V IF DC 108 A at 90 °C Package SOT-227 • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Higher switching frequency up to 150 kHz • Lower conduction losses and switching losses • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 600 V TC = 25 °C 147 TC = 90 °C 90 Pulsed collector current ICM 300 Clamped inductive load current ILM 300 Diode continuous forward current IF Gate-to-emitter voltage VGE Power dissipation, IGBT PD Power dissipation, diode Isolation voltage Revision: 25-Jun-13 PD VISOL A TC = 25 °C 180 TC = 90 °C 108 ± 20 TC = 25 °C 625 TC = 90 °C 300 TC = 25 °C 379 TC = 90 °C 182 Any terminal to case, t = 1 min 2500 V W V Document Number: 94771 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA60U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 250 μA 600 - - VGE = 15 V, IC = 100 A - 2.4 2.8 UNITS VGE = 15 V, IC = 100 A, TJ = 125 °C - 3 3.4 VGE = 15 V, IC = 100 A, TJ = 150°C - 3.3 - VCE = VGE, IC = 250 μA 3 3.9 5.0 VCE = VGE, IC = 250 μA, TJ = 125 °C - 2.5 - VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - mV/°C μA VGE = 0 V, VCE = 600 V - 7 100 VGE = 0 V, VCE = 600 V, TJ = 125 °C - 1.5 6.0 VGE = 0 V, VCE = 600 V, TJ = 150 °C - 6 10 V mA IC = 100 A, VGE = 0 V - 1.6 2.1 Forward voltage drop, diode VFM IC = 100 A, VGE = 0 V, TJ = 125 °C - 1.56 2.0 IC = 100 A, VGE = 0 V, TJ = 150 °C - 1.53 - Gate to emitter leakage current IGES VGE = ± 20 V - - ± 200 nA MAX. UNITS V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) TEST CONDITIONS MIN. TYP. - 460 690 - 160 250 Qgc - 70 130 IC = 100 A, VCC = 480 V, VGE = 15 V Turn-on switching loss Eon - 0.39 - Turn-off switching loss Eoff - 1.10 - Total switching loss Etot - 1.49 - Turn-on delay time td(on) - 245 - - 53 - - 240 - - 63 - - 0.52 - - 1.24 - - 1.76 - - 240 - - 54 - - 250 - - 80 - Rise time Turn-off delay time Fall time tr td(off) tf Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 25 °C tr IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery. Diode used 60APH06 td(off) tf nC mJ ns mJ ns TJ = 150 °C, IC = 300 A, Rg = 22  Reverse bias safe operating area RBSOA Fullsquare VGE = 15 V to 0 V, VCC = 400 V, VP = 600 V, L = 500 μH Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Revision: 25-Jun-13 IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C - 95 - - 10 - ns A - 480 - nC - 144 - ns - 16 - A - 1136 - nC Document Number: 94771 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA60U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C Maximum junction and storage temperature IGBT Junction to case RthJC Diode - - 0.20 - - 0.33 °C/W Case to sink thermal resistance, flat greased surface RthCS - 0.1 - Mounting torque, on termianls and heatsink T - - 1.3 Nm - 30 - g Weight Case style SOT-227 160 Allowable Case Temperature (°C) Allowable Case Temperature (°C) 160 140 120 DC 100 80 60 40 20 0 0 20 40 60 80 100 120 140 140 120 100 80 60 40 20 0 160 0 IC - Continuous Collector Current (A) 60 80 100 120 140 160 180 200 Fig. 3 - Maximum Allowable Forward Current vs. Case Temperature, Diode Leg 200 VGE = 15V 250 160 IF - Forward Current (A) IC - Collector to Emitter Current (A) 40 IF - Continuous Forward Current (A) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature 300 20 TJ = 125 °C 200 150 TJ = 25 °C TJ = 150 °C 100 50 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VCE - Collector-to-Emitter Voltage (V) Fig. 2 - Typical Collector to Emitter Voltage (V) Revision: 25-Jun-13 TJ = 150 °C 120 80 40 TJ = 25 °C TJ = 125 °C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VF - Forward Voltage Drop (V) Fig. 4 - Typical Forward Voltage Drop Characteristics Document Number: 94771 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA60U Vishay Semiconductors 160 140 120 100 TJ = 150 °C 80 TJ = 125 °C 60 40 TJ = 25 °C 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VCE - Collector-to-Emitter Voltage (V) IC- Collector-to-Emitter Current (A) www.vishay.com Ic = 100 A 3.2 3 Ic = 75 A 2.8 2.6 Ic = 50 A 2.4 2.2 2 1.8 Ic = 30 A 1.6 1.4 1.2 1 0 6.5 20 40 80 100 120 140 160 TJ - Junction Temperature (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 1.6 1.4 1 Switching Energy (mJ) TJ = 150 °C 10 TJ = 125 °C 0.1 0.01 TJ = 25 °C 0.001 Eoff 1.2 1 0.8 Eon 0.6 0.4 0.2 0.0001 0 100 200 300 400 500 0 600 10 20 30 40 50 60 70 80 90 100 110 120 VCES - Collector-to-Emitter Voltage (V) IC - Collector Current (A) Fig. 9 - Typical IGBT Energy Losses vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V, Diode used: 60APH06 Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current 1 5 4.5 TJ = 25 °C 4 Switching Time (μs) VGETH - Threshold Voltage (V) 60 VGE - Gate-to-Emitter Voltage (V) 100 ICES - Collector Current (mA) 3.4 3.5 3 2.5 TJ =125 °C 2 td(off) td(on) tf 0.1 tr 1.5 0.01 1 0.20 0.40 0.60 0.80 1.00 0 20 40 60 80 100 120 IC (mA) IC - Collector Current (A) Fig. 7 - Typical IGBT Threshold Voltage Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V, Diode used: 60APH06 Revision: 25-Jun-13 Document Number: 94771 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA60U www.vishay.com Vishay Semiconductors 4 2000 1500 3 2.5 Qrr (nC) Energy Losses (mJ) VR = 200 V IF = 50 A Eon 3.5 Eoff 2 1.5 125 °C 1000 500 1 25 °C 0.5 0 0 0 10 20 30 40 50 100 1000 Rg (Ω) diF/dt (A/μs) Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 360 V, VGE = 15 V, Diode used: 60APH06 Fig. 14 - Typical Stored Charge vs. dIF/dt of Diode 35 VR = 200 V IF = 50 A td(on) td(off) 1 25 20 Irr (A) Switching Time (μs) 30 tr 0.1 125 °C 15 tf 10 25 °C 5 0.01 0 0 10 20 30 40 50 60 100 1000 Rg (Ω) diF/dt (A/μs) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 360 V, IC = 100 A, VGE = 15 V, Diode used: 60APH06 Fig. 15 - Typical Reverse Recovery Current vs. dIF/dt of Diode 200 VR = 200 V IF = 50 A 180 160 125 °C trr (ns) 140 120 100 25 °C 80 60 40 100 1000 diF/dt (A/μs) Fig. 13 - Typical Reverse RecoveryTime vs. dIF/dt, of Diode Revision: 25-Jun-13 Document Number: 94771 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA60U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 PDM D = 0.75 D = 0.50 D = 0.25 D = 0.1 D = 0.05 D = 0.02 DC 0.01 0.001 0.0001 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 . 1 10 t1 - Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics, IGBT ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.75 D = 0.50 D = 0.25 D = 0.1 D = 0.05 D = 0.02 DC 0.01 0.001 0.0001 0.001 0.01 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics, Diode 1000 IC (A) 100 10 1 0 1 10 100 1000 VCE (V) Fig. 18 - IGBT Reverse BIAS SOA, TJ = 150 °C, VGE = 15 V Revision: 25-Jun-13 Document Number: 94771 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA60U www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id 19a - Clamped Inductive Load Test Circuit 19b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg 20a - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) 20b - Switching Loss Waveforms Test Circuit Revision: 25-Jun-13 Document Number: 94771 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB90DA60U www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 90 D A 60 U 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 4 - Current rating (90 = 90 A) 5 - Circuit configuration (D = Single switch with antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (60 = 600 V) 8 - Speed/type (U = Ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Single switch diode Lead Assignment 4 3 1 2 D 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 25-Jun-13 Document Number: 94771 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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