VSK.430..PbF Series
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 430 A
FEATURES
• High current capability
• High surge capability
• High voltage ratings up to 2000 V
• 3000 VRMS isolating voltage with non-toxic
substrate
• Industrial standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
TYPICAL APPLICATIONS
SUPER MAGN-A-PAK
• Motor starters
• DC motor controls - AC motor controls
PRODUCT SUMMARY
• Uninterruptable power supplies
IT(AV)
430 A
• Wind mill
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
82 °C
IT(AV)
IT(RMS)
TC
ITSM
I2t
675
A
82
°C
15.7
16.4
50 Hz
1232
60 Hz
1125
kA
kA2s
12 320
kA2s
1600 to 2000
V
- 40 to 150
Range
TStg
A
60 Hz
Range
TJ
UNITS
430
50 Hz
I2t
VRRM
VALUES
- 40 to 130
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VSK.430..
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
16
1600
1700
18
1800
1900
20
2000
2100
Document Number: 93748
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
IRRM/IDRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
100
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VSK.430..PbF Series
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 430 A
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
430
A
Maximum average on-state current
at case temperature
IT(AV),
IF(AV)
180° conduction, half sine wave
82
°C
Maximum RMS on-state current
IT(RMS)
180° conduction, half sine wave at TC = 82 °C
675
A
t = 10 ms
15.7
Maximum peak, one-cycle,
non-repetitive surge current
ITSM,
IFSM
t = 8.3 ms
t = 10 ms
I2t
t = 8.3 ms
Maximum
for fusing
No voltage
reapplied
13.2
Sinusoidal half wave,
initial TJ = TJ maximum
13.8
1232
1125
871
t = 0.1 ms to 10 ms, no voltage reapplied
12 320
t = 8.3 ms
I2t
100 % VRRM
reapplied
100 % VRRM
reapplied
t = 10 ms
I2t
16.4
kA
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
No voltage
reapplied
kA2s
795
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.96
High level value of threshold voltage
VF(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.06
kA2s
V
Low level value of on-state slope resistance
rf1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.51
High level value of on-state slope
resistance
rf2
(I > x IT(AV)), TJ = TJ maximum
0.45
Maximum on-state voltage drop
VTM
Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse
1.65
V
Maximum forward voltage drop
VFM
Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse
1.65
V
Maximum holding current
IH
Typical latching current
IL
m
500
TJ = 25 °C, anode supply 12 V resistive load
mA
1000
SWITCHING
PARAMETER
SYMBOL
Maximum rate of rise of turned-on current
dI/dt
TEST CONDITIONS
TJ = TJ maximum, ITM = 400 A, VDRM applied
VALUES
UNITS
1000
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
2.0
Typical turn-off time
tq
ITM = 750 A, TJ = TJ maximum, dI/dt = - 60 A/μs
VR = 50, dV/dt = 20 V/μs, Gate 0 V 100
200
μs
BLOCKING
PARAMETER
SYMBOL
Maximum critical rate of rise of
off-state voltage
dV/dt
TEST CONDITIONS
VALUES
UNITS
TJ = 130 °C, linear to VD = 80 % VDRM
1000
V/μs
RMS insulation voltage
VINS
t=1s
3000
V
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
100
mA
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93748
Revision: 02-Jul-10
VSK.430..PbF Series
Thyristor/Diode and Thyristor/Thyristor
Vishay Semiconductors
(SUPER MAGN-A-PAK Power Modules), 430 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
VALUES
TJ
- 40 to 130
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to case per junction
RthJC
Maximum thermal resistance,
case to heatsink
RthC-hs
DC operation
UNITS
°C
0.065
K/W
SMAP to heatsink
Mounting torque ± 10 %
busbar to SMAP
0.02
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Approximate weight
6 to 8
Nm
12 to 15
1500
Case style
See dimensions - link at the end of datasheet
g
SUPER MAGN-A-PAK
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.009
0.006
120°
0.011
0.011
90°
0.014
0.015
60°
0.021
0.022
30°
0.037
0.038
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 93748
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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3
VSK.430..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 430 A
VSK.430..PbF Series
R thJC (DC) = 0.065 K/W
120
110
Conduction Angle
100
90
60°
30°
90°
80
120°
180°
70
0
100
200
300
400
50
DC
180°
120°
90°
60°
30°
900
800
700
600
500
RMS Limit
400
Conduction Period
300
VSK.430..PbF Series
Per Junction
TJ = 130°C
200
100
0
0
100
200
300
400
500
600
700
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
130
VSK.430..PbF Series
R thJC (DC) = 0.065 K/W
120
110
Conduction Period
100
90
30°
60°
80
90°
120°
180°
DC
70
0
100
200
300
400
500
600
700
180°
120°
90°
60°
30°
400
RMS Limit
300
Conduction Angle
200
VSK.430..PbF Series
Per Junction
TJ = 130°C
100
0
0
100
200
300
400
500
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
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@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
13000
12000
11000
10000
9000
8000
VSK.430..PbF Series
Per Junction
7000
6000
10
100
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
700
500
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial TJ = 130°C
14000
1
Fig. 2 - Current Ratings Characteristics
600
15000
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
1000
Average On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
Maximum Average On-state Power Loss (W)
Vishay Semiconductors
16000
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained .
Initial TJ = 130°C
No Voltage Reapplied
Rated VRRM Reapplied
15000
14000
13000
12000
11000
10000
9000
8000
7000
VSK.430..PbF Series
Per Junction
6000
0.01
1
0.1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93748
Revision: 02-Jul-10
VSK.430..PbF Series
800
5K
0 .0
K/
W
=
K/
W
/W
500
A
0.
2
R th S
Conduction Angle
K/
W
W
K/
600
0.
16
09
0.
12
180°
120°
90°
60°
30°
700
0.
-D
e lt
400
0.3
K
300
0.4
200
0.6 K
/
a
/W
R
Maximum Total On-state Power Loss (W)
Thyristor/Diode and Thyristor/Thyristor
Vishay Semiconductors
(SUPER MAGN-A-PAK Power Modules), 430 A
K/ W
W
VSK.430..PbF Series
Per Module
TJ = 130°C
100
0
0
100
200
300
400
500
600
700
0
Total RMS Output Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
1.
5
1
W
K/
K/
W
-
2000
K/
W
=
2
SA
180°
(Sine)
180°
(Rect)
2500
R th
D
e
3K
/W
lt a
R
Maximum Total Power Loss (W)
3000
1500
5K
1000
/W
10 K
/W
2 x VSK.430..PbF Series 15 K/ W
Single Phase Bridge
Connected
T J = 130 °C
500
0
0
100 200 300 400 500 600 700 800 900
0
Total Output Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C )
Fig. 8 - On-State Power Loss Characteristics
R
4500
0.
4000
120°
(Rect)
3500
3000
2500
2000
0.0
3 x VSK.430..PbF Series
Three Phase Bridge
Connected
TJ = 130°C
500
0
0
200
400
600
K/
W
=
0.
0
05
K/
W
-D
el
ta
R
5K
/W
0.1 K/
W
0.2 K/ W
800 1000 1200 1400
0
Total Output Current (A)
01
0.
02
K/
W
0.0
3K
/W
1500
1000
SA
th
Maximum Total Power Loss (W)
5000
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 93748
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
VSK.430..PbF Series
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 430 A
TJ = 25 °C
TJ = 130°C
1000
VSK.430..PbF Series
Per Junction
100
0.5
1
1.5
2
2.5
3
0.1
Transient Thermal Impedance Z thJC (K/W)
Instantaneous On-state Current (A)
10000
VSK.430..PbF Series
Per Junction
0.01
Steady State Value:
R thJC = 0.065 K/W
(DC Operation)
0.001
0.001
3.5
0.01
Instantaneous On-state Voltage (V)
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - On-State Voltage Drop Characteristics
Fig. 11 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr