RN2505TE85LF

RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . R1 (kΩ) R2 (kΩ) RN2501 4.7 4.7 RN2502 10 10 RN2503 22 22 RN2504 47 47 RN2505 2.2 47 RN2506 4.7 47 SMV JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 14 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage RN2501 to 2506 Collector-emitter voltage Symbol Rating Unit VCBO −50 V VCEO −50 V −10 RN2501 to 2504 Emitter base voltage RN2505, 2506 Collector current Collector power dissipation RN2501 to 2506 Junction temperature Storage temperature range Equivalent Circuit (Top View) VEBO −5 V IC −100 mA P C* 300 mW Tj 150 °C Tstg −55 to150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Start of commercial production 1988-10 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-11-19 RN2501 to RN2506 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current Symbol Test Condition Max VCB = −50 V, IE = 0 mA ― ― −100 ICEO VCE = −50 V, IB = 0 mA ― ― −500 −0.82 ― −1.52 −0.38 ― −0.71 −0.17 ― −0.33 −0.082 ― −0.15 −0.078 ― −0.145 −0.074 ― −0.138 RN2501 30 ― ― RN2502 50 ― ― 70 ― ― 80 ― ― RN2505 80 ― ― RN2506 80 ― ― ― −0.1 −0.3 RN2501 −1.1 ― −2.0 RN2502 −1.2 ― −2.4 −1.3 ― −3.0 −1.5 ― −5.0 RN2505 −0.6 ― −1.1 RN2506 −0.7 ― −1.3 −1.0 ― −1.5 −0.5 ― −0.8 RN2502 VEB = −10 V, IC = 0 mA RN2503 Emitter cut-off current RN2504 IEBO RN2505 VEB = −5 V, IC = 0 mA RN2506 RN2503 hFE DC current gain RN2504 RN2501 to 2506 VCE (sat) RN2503 VI (ON) Input voltage (ON) RN2504 RN2501 to 2504 VCE = −5 V, IC = −10 mA IC = −5 mA, IB = −0.25 mA VCE = −0.2 V, IC = −5 mA Unit nA mA ― V V VI (OFF) VCE = −5 V, IC = −0.1 mA VCE = −10 V, IC = −5 mA ― 200 ― MHz VCB = −10 V, IE = 0 mA, f = 1 MHz ― 3 6 pF RN2501 3.29 4.7 6.11 RN2502 7 10 13 15.4 22 28.6 32.9 47 61.1 RN2505 1.54 2.2 2.86 RN2506 3.29 4.7 6.11 RN2501 to 2504 0.9 1.0 1.1 Input voltage (OFF) RN2505, 2506 Transition frequency RN2501 to 2506 fT Collector output capacitance RN2501 to 2506 Cob RN2503 ― R1 Input resistance RN2504 Resistance ratio Typ. ICBO RN2501 to 2506 RN2501 Collector-emitter saturation voltage Min RN2505 ― R1/R2 RN2506 © 2019 Toshiba Electronic Devices & Storage Corporation kΩ 0.0421 0.0468 0.0515 0.09 2 V 0.1 ― 0.11 2019-11-19 RN2501 to RN2506 Characteristics Curves(Q1, Q2 Common) RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-11-19 RN2501 to RN2506 Characteristics Curves(Q1, Q2 Common) RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-11-19 RN2501 to RN2506 RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-11-19 RN2501 to RN2506 Marking Part No Marking Part No.(abbreviation code) RN2501 Part No.(abbreviation code) RN2502 Part No.(abbreviation code) RN2503 Part No.(abbreviation code) RN2504 Part No.(abbreviation code) RN2505 Part No.(abbreviation code) RN2506 © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-11-19 RN2501 to RN2506 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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