RN4602TE85LF

RN4602 TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4602 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 10kΩ R2: 10kΩ (Q1, Q2 Common) SM6 Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −10 V IC −100 mA Collector current 2-3N1A Weight: 15 mg (typ.) Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 10 V IC 100 mA Collector current Start of commercial production 1988-11 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-11-01 RN4602 Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit PC * 300 mW Tj 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Marking Equivalent Circuit (Top View) © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-11-01 RN4602 Q1 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Symbol Test Circuit ICBO ― ICEO IEBO Test Condition Min Typ. Max Unit VCB = −50 V, IE = 0 mA ― ― −100 ― VCE = −50 V, IB = 0 mA ― ― −500 ― VEB = −10 V, IC = 0 mA -0.38 ― -0.71 mA nA hFE ― VCE = −5 V, IC = −10mA 50 ― ― ― VCE (sat) ― IC = −5 mA, IB = −0.25 mA ― −0.1 −0.3 V Input voltage (ON) VI (ON) ― VCE = −0.2 V, IC = −5 mA -1.2 ― -2.4 V Input voltage (OFF) VI (OFF) ― VCE = −5 V, IC = −0.1 mA −1.0 ― −1.5 V Transition frequency fT ― VCE = −10 V, IC = −5 mA ― 200 ― MHz Cob ― VCB = −10 V, IE = 0 mA, f = 1 MHz ― 3 6 pF Test Condition Min Typ. Max Unit DC current gain Collector-emitter saturation voltage Collector output capacitance Q2 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit ICBO ― VCB = 50 V, IE = 0 mA ― ― 100 ICEO ― VCE = 50 V, IB = 0 mA ― ― 500 Emitter cut-off current IEBO ― VEB = 10 V, IC = 0 mA 0.38 ― 0.71 mA DC current gain hFE ― VCE = 5 V, IC = 10 mA 50 ― ― ― VCE (sat) ― IC = 5 mA, IB = 0.25 mA ― 0.1 0.3 V Input voltage (ON) VI (ON) ― VCE = 0.2 V, IC = 5 mA 1.2 ― 2.4 V Input voltage (OFF) VI (OFF) ― VCE = 5 V, IC = 0.1 mA 1.0 ― 1.5 V Transition frequency fT ― VCE = 10 V, IC = 5 mA ― 250 ― MHz Cob ― VCB = 10 V, IE = 0 mA, f = 1 MHz ― 3 6 pF Characteristic Collector cut-off current Collector-emitter saturation voltage Collector output capacitance nA Q1, Q2 Common Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Input resistance R1 ― ― 7 10 13 kΩ Resistance ratio R1/R2 ― ― 0.9 1.0 1.1 ― Characteristic © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-11-01 RN4602 Q1,Q2 characteristics curves Q1 RN4602 Q2 RN4602 Q1 RN4602 Q2 RN4602 Q1 RN4602 Q2 RN4602 The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-11-01 RN4602 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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