RN1961 to RN1966
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1961, RN1962, RN1963
RN1964, RN1965, RN1966
Unit: mm
Switching, Inverter Circuit, Interface Circuit and Driver Circuit
Including two devices in US6 (ultra super mini type 6 leads)
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process and miniaturize
equipment.
Various resistance values are available to suit various circuit designs.
Complementary to RN2961 to RN2966
Equivalent Circuit and Bias Resistor Values
Part No.
R1 (kΩ)
R2 (kΩ)
RN1961
4.7
4.7
RN1962
10
10
RN1963
22
22
RN1964
47
47
RN1965
2.2
47
RN1966
4.7
47
JEDEC
―
JEITA
―
TOSHIBA
2-2J1B
Weight: 6.8 mg (typ.)
Equivalent Circuit (Top View)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1961 to 1966
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
RN1961 to 1964
Emitter-base voltage
RN1965, 1966
Collector current
Collector power dissipation
RN1961 to 1966
Junction temperature
Storage temperature range
10
VEBO
5
V
IC
100
mA
P C*
200
mW
Tj
150
°C
Tstg
−55 to150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
*: Total rating
Start of commercial production
1992-01
© 2019
Toshiba Electronic Devices & Storage Corporation
1
2019-11-18
RN1961 to RN1966
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
Symbol
Test Condition
Min
Typ.
Max
ICBO
VCB = 50 V, IE = 0 mA
―
―
100
ICEO
VCE = 50 V, IB = 0 mA
―
―
500
0.82
―
1.52
0.38
―
0.71
0.17
―
0.33
0.082
―
0.15
0.078
―
0.145
RN1966
0.074
―
0.138
RN1961
30
―
―
RN1962
50
―
―
70
―
―
80
―
―
RN1965
80
―
―
RN1966
80
―
―
―
0.1
0.3
RN1961
1.1
―
2.0
RN1962
1.2
―
2.4
1.3
―
3.0
1.5
―
5.0
RN1965
0.6
―
1.1
RN1966
0.7
―
1.3
1.0
―
1.5
0.5
―
0.8
RN1961 to 1966
RN1961
RN1962
VEB = 10 V, IC = 0 mA
RN1963
IEBO
Emitter cut-off current
RN1964
RN1965
VEB = 5 V, IC = 0 mA
RN1963
DC current gain
RN1964
Collector-emitter
saturation voltage
RN1961 to 1966
hFE
VCE (sat)
VCE = 5 V, IC = 10 mA
IC = 5 mA, IB = 0.25 mA
RN1963
Input voltage (ON)
RN1964
VI (ON)
VCE = 0.2 V, IC = 5 mA
RN1961 to 1964
Input voltage (OFF)
RN1965, 1966
VI (OFF)
VCE = 5 V, IC = 0.1 mA
Unit
nA
mA
―
V
V
V
Transition frequency
RN1961 to 1966
fT
VCE = 10 V, IC = 5 mA
―
250
―
MHz
Collector output
capacitance
RN1961 to 1966
Cob
VCB = 10 V, IE = 0 mA,
f = 1 MHz
―
3
6
pF
RN1961
3.29
4.7
6.11
RN1962
7
10
13
15.4
22
28.6
32.9
47
61.1
RN1965
1.54
2.2
2.86
RN1966
3.29
4.7
6.11
RN1961 to 1964
0.9
1.0
1.1
0.0421
0.0468
0.0515
0.09
0.1
0.11
RN1963
―
R1
Input resistor
RN1964
Resistor ratio
RN1965
―
R1/R2
RN1966
© 2019
Toshiba Electronic Devices & Storage Corporation
2
kΩ
―
2019-11-18
RN1961 to RN1966
Characteristics Curves (Q1, Q2 Common)
RN1961
COLLECTOR CURRENT
IC (mA)
RN1962
RN1963
RN1964
RN1965
RN1966
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
Toshiba Electronic Devices & Storage Corporation
3
2019-11-18
RN1961 to RN1966
Characteristics Curves (Q1, Q2 Common)
RN1962
RN1961
RN1963
RN1964
RN1965
RN1966
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
Toshiba Electronic Devices & Storage Corporation
4
2019-11-18
RN1961 to RN1966
Characteristics Curves (Q1, Q2 Common)
RN1961
RN1962
RN1963
RN1964
RN1965
RN1966
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
Toshiba Electronic Devices & Storage Corporation
5
2019-11-18
RN1961 to RN1966
Characteristics Curves (Q1, Q2 Common)
RN1961
RN1962
RN1963
RN1964
RN1965
RN1966
© 2019
Toshiba Electronic Devices & Storage Corporation
6
2019-11-18
RN1961 to RN1966
Marking
Part No.
Marking
Part No.(abbreviation code)
RN1961
Part No.(abbreviation code)
RN1962
Part No.(abbreviation code)
RN1963
Part No.(abbreviation code)
RN1964
Part No.(abbreviation code)
RN1965
Part No.(abbreviation code)
RN1966
© 2019
Toshiba Electronic Devices & Storage Corporation
7
2019-11-18
RN1961 to RN1966
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.
Hardware, software and systems described in this document are collectively referred to as “Product”.
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's
written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for
complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to
property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the
Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information,
including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and
conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product
will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited
to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the
applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any
other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including
without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT
OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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© 2019
Toshiba Electronic Devices & Storage Corporation
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2019-11-18