RN1427TE85LF

RN1421 to RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications  High current type (IC (max) = 800 mA)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process  Low VCE (sat)  Complementary to RN2421 to RN2427 Equivalent Circuit and Bias Resister Values Type No. R1 (kΩ) R2 (kΩ) RN1421 1 1 RN1422 2.2 2.2 S-Mini RN1423 4.7 4.7 JEDEC RN1424 10 10 RN1425 0.47 10 RN1426 1 10 RN1427 2.2 10 TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 12 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage RN1421 to 1427 Collector-emitter voltage Symbol Rating Unit VCBO 50 V VCEO 50 V RN1421 to 1424 Emitter-base voltage RN1425, 1426 10 VEBO 5 RN1427 Collector current Collector power dissipation RN1421 to 1427 Junction temperature Storage temperature range V 6 IC 800 mA PC 200 mW Tj 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1988-03 © 2021 Toshiba Electronic Devices & Storage Corporation 1 2021-08-26 RN1421 to RN1427 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Symbol Test Condition Min Typ. Max ICBO VCB = 50 V, IE = 0 mA ― ― 100 ICEO VCE = 50 V, IB = 0 mA ― ― 500 3.85 ― 7.14 1.75 ― 3.25 0.82 ― 1.52 0.38 ― 0.71 0.365 ― 0.682 0.35 ― 0.65 0.378 ― 0.703 RN1421 60 ― ― RN1422 65 ― ― RN1423 70 ― ― 90 ― ― RN1425 90 ― ― RN1426 90 ― ― RN1427 90 ― ― ― ― 0.25 RN1421 1.0 ― 3.5 RN1422 1.4 ― 4.5 RN1423 2.0 ― 6.5 3.0 ― 12.0 RN1425 0.6 ― 2.0 RN1426 0.7 ― 2.5 RN1427 1.0 ― 3.0 RN1421 to 1424 0.8 ― 1.3 0.4 ― 0.8 0.5  1.0 VCE = 5 V, IC = 20 mA ― 300 ― MHz VCB = 10 V, IE = 0 mA, f = 1 MHz ― 7 ― pF RN1421 0.7 1.0 1.3 RN1422 1.54 2.2 2.86 RN1423 3.29 4.7 6.11 7 10 13 RN1425 0.329 0.47 0.61 RN1426 0.7 1.0 1.3 RN1427 1.54 2.2 2.86 RN1421 to 1424 0.9 1.0 1.1 0.0423 0.047 0.0517 RN1426 0.09 0.1 0.11 RN1427 0.2 0.22 0.24 RN1421 to 1427 RN1421 RN1422 VEB = 10 V, IC = 0 mA RN1423 Emitter cut-off current RN1424 IEBO RN1425 VEB = 5 V, IC = 0 mA RN1426 RN1427 DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) RN1424 VEB = 6 V, IC = 0 mA hFE RN1421 VCE (sat) RN1422 to 1427 RN1424 RN1425, 1426 VCE = 1 V, IC = 100 mA IC = 50 mA, IB = 2 mA VI (ON) VI (OFF) Transition frequency RN1421 to 1427 fT Collector Output capacitance RN1421 to 1427 Cob Resistor ratio RN1424 RN1425 nA mA ― V IC = 50 mA, IB = 1 mA VCE = 0.2 V, IC = 100 mA VCE = 5 V, IC = 0.1 mA RN1427 Input resistor Unit ― R1 ― R1/R2 © 2021 Toshiba Electronic Devices & Storage Corporation 2 V V kΩ ― 2021-08-26 RN1421 to RN1427 Characteristics Curves © 2021 Toshiba Electronic Devices & Storage Corporation 3 2021-08-26 RN1421 to RN1427 © 2021 Toshiba Electronic Devices & Storage Corporation 4 2021-08-26 RN1421 to RN1427 © 2021 Toshiba Electronic Devices & Storage Corporation 5 2021-08-26 RN1421 to RN1427 The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 6 2021-08-26 RN1421 to RN1427 Marking Type Name Marking RN1421 RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 © 2021 Toshiba Electronic Devices & Storage Corporation 7 2021-08-26 RN1421 to RN1427 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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