TC74VHC9125,9126P/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74VHC9125P, TC74VHC9125FK
TC74VHC9126P, TC74VHC9126FK
TC74VHC9125P/FK 5-bit Universal Schmitt Buffer with 3-State Outputs
TC74VHC9126P/FK 5-bit Universal Schmitt Buffer with 3-State Outputs
TC74VHC9125P, TC74VHC9126P
The TC74VHC9125/9126 are an ultra-high-speed 5-bit Schmitt buffer
fabricated using silicon-gate CMOS technology. The TC74VHC9125/9126
combines low power consumption of CMOS with Schottky TTL speeds.
Y1 to Y4 outputs can be put in the high-impedance state by placing a logic
HIGH on the Enable ( G ) input. The CONT input determines the logical
inversion of data. A logic LOW on the CONT input configures the
TC74VHC9125/9126 as an inverter; a logic HIGH on the CONT input
configures the TC74VHC9125/9126 as a buffer.
TC74VHC9125 Y5 output is an inverting type, and the TC74VHC9126 Y5
output is a non-inverting type.
All the inputs have hysteresis between the positive-going and negativegoing thresholds. Thus the TC74VHC9125/9126 are capable of squaring up
transitions of slowly changing input signals and provides an improved noise
immunity.
Additionally, all the inputs have a newly developed protection circuit
without a diode returned to VCC. This enables the inputs to be tolerant of up
to 5 volts even when power supply is down. The input power-down protection
capability makes the TC74VHC9125/9126 ideal for a wide range of
applications, such as interfacing between different voltages, voltage
translation from 5 V to 3 V and battery back-up circuits.
TC74VHC9125FK, TC74VHC9126FK
Weight
DIP14-P-300-2.54:
VSSOP14-P-0030-0.50:
0.96 g ( typ.)
0.02 g ( typ.)
Features
High speed: tpd = 5.0 ns (typ.) (VCC = 5 V)
Low supply current: ICC = 2 µA (max) (Ta = 25°C)
All inputs are provided with power-down protection.
Symmetrical rise and fall delays: tpLH ∼
− tpHL
Wide operating voltage range: VCC (opr) = 2 to 5.5 V
Start of commercial production
2009-04
© 2018
Toshiba Electronic Devices & Storage Corporation
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2018-06-22
TC74VHC9125,9126P/FK
Pin Assignment
TC74VHC9125
TC74VHC9126
CONT
1
14
VCC
CONT
1
14
VCC
A1
2
13
Y1
A1
2
13
Y1
A2
3
12
Y2
A2
3
12
Y2
A3
4
11
Y3
A3
4
11
Y3
A4
5
10
Y4
A4
5
10
Y4
A5
6
9
Y5
A5
6
9
Y5
GND
7
8
G
GND
7
8
G
(top view)
(top view)
Truth Table
Inputs
G
CONT A1 to A4
Outputs
Inputs
Outputs
Y1 to Y4
A5
Y5(9125)
Y5(9126)
H
X
X
Z
L
H
L
L
L
L
H
H
L
H
L
L
H
L
L
H
L
L
L
H
H
H
X : Don’t care
Z
: High impedance
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Toshiba Electronic Devices & Storage Corporation
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TC74VHC9125,9126P/FK
Absolute Maximum Ratings (Note1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5 to 7.0
V
DC input voltage
VIN
−0.5 to 7.0
V
DC output voltage
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
−20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
500 (DIP) (Note 2)/180(VSSOP)
mW
Storage temperature
Tstg
−65 to 150
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the
operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be applied
until 300 mW.
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
2.0 to 5.5
V
Input voltage
VIN
0 to 5.5
V
VOUT
0 to VCC
V
Topr
−40 to 85
°C
Output voltage
Operating temperature
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
© 2018
Toshiba Electronic Devices & Storage Corporation
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2018-06-22
TC74VHC9125,9126P/FK
Electrical Characteristics
DC Characteristics
Characteristics
Positive threshold
voltage
Test Condition
Symbol
VP
Ta = 25°C
Ta = −40 to 85°C
VCC (V)
Min
Typ.
Max
Min
Max
―
3.0
4.5
5.5
―
―
―
―
―
―
2.20
3.15
3.85
―
―
―
2.20
3.15
3.85
0.90
1.35
1.65
―
―
―
―
―
―
0.90
1.35
1.65
―
―
―
Negative threshold
voltage
VN
―
3.0
4.5
5.5
Hysteresis voltage
VH
―
3.0
4.5
5.5
0.30
0.40
0.50
―
―
―
1.20
1.40
1.60
0.30
0.40
0.50
1.20
1.40
1.60
IOH = −50 µA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
―
―
―
1.9
2.9
4.4
―
―
―
IOH = −4 mA
IOH = −8 mA
3.0
4.5
2.58
3.94
―
―
―
―
2.48
3.80
―
―
IOL = 50 µA
2.0
3.0
4.5
―
―
―
0.0
0.0
0.0
0.1
0.1
0.1
―
―
―
0.1
0.1
0.1
IOL = 4 mA
IOL = 8 mA
3.0
4.5
―
―
―
―
0.36
0.36
―
―
0.44
0.44
High-level output
voltage
VOH
VIN
= VIH or VIL
Unit
V
V
V
Low-level output
voltage
VOL
3-state output offstate current
IOZ
VIN = VIH or VIL
VOUT = VCC or GND
5.5
―
―
±0.25
―
±2.50
µA
Input leakage current
IIN
VIN = 5.5 V or GND
0 to 5.5
―
―
±0.1
―
±1.0
µA
Quiescent supply
current
ICC
VIN = VCC or GND
5.5
―
―
2.0
―
20.0
µA
VIN
= VIH or VIL
© 2018
Toshiba Electronic Devices & Storage Corporation
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2018-06-22
TC74VHC9125,9126P/FK
AC Characteristics (input: tr = tf = 3 ns)
Characteristics
Propagation delay
time
(A1 to 4 - Y1 to 4)
Propagation delay
time
(CONT-Y1 to 4)
Propagation delay
time
(A5 – Y5)
3-state output enable
time
Test Condition
Symbol
tpLH
tpHL
tpLH
tpHL
tpLH
tpHL
tpZL
tpZH
VCC (V)
Ta = 25°C
Ta = −40 to 85°C
CL (pF)
Min
Typ.
Max
Min
Max
15
―
6.0
8.0
1.0
10.0
50
―
9.0
12.5
1.0
15.0
15
―
5.0
5.5
1.0
7.0
50
―
7.0
8.5
1.0
10.0
15
―
8.5
11.5
1.0
13.5
50
―
13.0
17.0
1.0
20.5
15
―
6.5
8.0
1.0
9.5
50
―
10.5
12.5
1.0
15.0
15
―
6.0
8.0
1.0
10.0
50
―
9.0
12.5
1.0
15.0
15
―
5.0
5.5
1.0
7.0
50
―
7.0
8.5
1.0
10.0
15
―
6.0
8.0
1.0
9.5
50
―
10.5
13.5
1.0
16.5
15
―
4.5
5.5
1.0
6.5
50
―
9.0
10.5
1.0
12.5
3.3 ± 0.3
50
―
12.5
13.5
1.0
16.0
5.0 ± 0.5
50
―
9.0
9.5
1.0
11.0
3.3 ± 0.3
50
―
―
1.5
―
1.5
5.0 ± 0.5
50
―
―
1.0
―
1.0
3.3 ± 0.3
―
5.0 ± 0.5
3.3 ± 0.3
―
5.0 ± 0.5
3.3 ± 0.3
―
5.0 ± 0.5
3.3 ± 0.3
RL = 1 kΩ
5.0 ± 0.5
Unit
ns
ns
ns
ns
3-state output disable
time
tpLZ
tpHZ
Output to output skew
(A1 to 4 - Y1 to 4)
tosLH
tosHL
Input capacitance
CIN
―
―
―
―
4
10
―
10
pF
COUT
―
―
―
―
6
―
―
―
pF
―
―
―
10
―
―
―
pF
Output capacitance
Power dissipation
capacitance (Note 2)
CPD
RL = 1 kΩ
(Note 1)
fIN = 1 MHz
ns
ns
Note 1: Parameter guaranteed by design.
tosLH = |tpLHm − tpLHn|, tosHL = |tpHLm − tpHLn|
Note 2: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD·VCC·fIN + ICC / 5 (per bit)
© 2018
Toshiba Electronic Devices & Storage Corporation
5
2018-06-22
TC74VHC9125,9126P/FK
Input Equivalent Circuit
Input
© 2018
Toshiba Electronic Devices & Storage Corporation
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2018-06-22
TC74VHC9125,9126P/FK
Package Dimensions
Weight: 0.96 g (typ.)
© 2018
Toshiba Electronic Devices & Storage Corporation
7
2018-06-22
TC74VHC9125,9126P/FK
Package Dimensions
Weight: 0.02 g (typ.)
© 2018
Toshiba Electronic Devices & Storage Corporation
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2018-06-22
TC74VHC9125,9126P/FK
RESTRICTIONS ON PRODUCT USE
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Hardware, software and systems described in this document are collectively referred to as “Product”.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for
complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to
property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the
Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information,
including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and
conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product
will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited
to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the
applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any
other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
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• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
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Toshiba Electronic Devices & Storage Corporation
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2018-06-22