TCK128BG,LF

TCK128BG TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK128BG 0.08 nA Ultra small IQ 1.0 A Load Switch IC in Ultra Small Package TCK128BG is load switch IC for a general power management with slew rate control driver, featuring super low quiescent current, low switch ON resistance and wide input operation voltage range from 1.0 to 5.5 V. Quiescent current is only 0.08 nA and output current is available up to 1.0 A. TCK128BG also feature output auto-discharge function. This device is available in 0.35 mm pitch ultra small package WCSP4G (0.645 mm x 0.645 mm, t: 0.465 mm max.) with back side coating that protect from external damage. Thus this device is ideal for portable applications that require high-density board assembly and ultra low power consumption such as wearables, smartphones, and IoT modules. WCSP4G Weight: 0.38 mg (typ.) Feature  Wide input operation voltage range : VIN = 1.0 to 5.5 V  High output current : IOUT = 1.0 A  Ultra small Quiescent current : IQ = 0.08 nA at VIN = 5.5 V, VCT = 0 V, IOUT =0 mA  Low ON resistance RON = 58 mΩ (typ.) at VIN = 3.3 V, IOUT = -0.5 A RON = 106 mΩ (typ.) at VIN = 1.8 V, IOUT = -0.5 A  Built in Slew rate control driver  Built in Auto-discharge  Active Low  Ultra small package : WCSP4G with back side coating (0.645 mm x 0.645 mm, t: 0.465 mm max.) Pin Assignment(Top view) VIN (A2) CONTROL (B2) VOUT (A1) GND (B1) Top marking 8: TCK128BG Index Start of commercial production 2021-11 © 2021 Toshiba Electronic Devices & Storage Corporation 1 2021-10-28 TCK128BG Absolute Maximum Ratings (Ta = 25°C) Characteristics Input voltage Symbol Rating Unit VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN +0.3 V 1.0 A Output current IOUT 2.0 (Note 1) A 1.0 (Note 2) W DC Pulse Power dissipation PD Junction temeperature Tj 150 C Tstg 55 to 150 C Storage temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: 300 μs pulse, 2% duty cycle Note2: Rating at mounting on a board Glass epoxy board dimension : 40 mm x 40 mm , 4 layer Metal pattern ratio : approximately 70% each layer Block Diagram VOUT V IN Slew Rate Control Driver Control Logic CONTROL Control signal High : OFF Low : ON Output Discharge GND Operating conditions Characteristics Symbol Condition Min Max Unit Input voltage VIN ― 1.0 5.5 V Output current IOUT ― ― 1.0 A CONTROL High-level input voltage VIH 0.9 ― V CONTROL Low-level input voltage VIL ― 0.4 V -40 85 C Operating Ambient temperature range © 2021 Toshiba Electronic Devices & Storage Corporation Ta_opr 1.0 V ≤ VIN ≤ 5.5 V ― 2 2021-10-28 TCK128BG Electrical Characteristics DC Characteristics Ta = -40 to 85°C (Note 2) Ta = 25°C Characteristics Quiescent current (ON state) Standby current (OFF state) Symbol IQ IQ(OFF) + ISD(OFF) On resistance Discharge on resistance RON RSD Test Condition Min Typ. Max Min Typ. VIN 5.5 VVCT = 0 V, IOUT = 0 mA  0.08 8  VIN  VCT = 1.0 V, VOUT = OPEN  0.6   VIN  VCT = 4.5 V, VOUT = OPEN  3   VIN  VCT = 5.5 V, VOUT = OPEN  13 45  VIN  5.0 V, IOUT  -0.5 A  46    68 VIN  3.3 V, IOUT  -0.5 A  58    87 VIN  1.8 V, IOUT  -0.5 A  106    169 VIN  1.2 V, IOUT  -0.2 A  210    450 VIN  1.0 V, IOUT  -0.05 A  343     VIN  3.3 V, IOUT  0.01 A  109     Unit Max 4.1 100 nA   nA 86  nA 550 nA (Note 3) (Note 3) 148 (Note 3) m  Note 2 : This parameter is warranted by design. Note 3 : Ta = 85°C © 2021 Toshiba Electronic Devices & Storage Corporation 3 2021-10-28 TCK128BG AC Characteristics (Ta = 25°C) VIN = 1.2 V Characteristics Symbol Test Condition (Figure 1) Min Typ. Max Unit VOUT rise time tr RL = 500 Ω, CL = 0.1 μF  197  μs VOUT fall time tf RL = 500 Ω, CL = 0.1 μF  24  μs Turn on delay tON RL = 500 Ω, CL = 0.1 μF  335  μs Turn off delay tOFF RL = 500 Ω, CL = 0.1 μF  6  μs Min Typ. Max Unit VIN = 3.3 V Characteristics Symbol Test Condition (Figure 1) VOUT rise time tr RL = 500 Ω, CL = 0.1 μF  363  μs VOUT fall time tf RL = 500 Ω, CL = 0.1 μF  32  μs Turn on delay tON RL = 500 Ω, CL = 0.1 μF  324  μs Turn off delay tOFF RL = 500 Ω, CL = 0.1 μF  10  μs AC Waveform VIH VCT 50% tf tr VOUT 50% 90% 10% VIL 90% 10% 90% VOUT 10% tON Figure 1 © 2021 Toshiba Electronic Devices & Storage Corporation tOFF VOH VOL tr, tf, tON, tOFF Waveforms 4 2021-10-28 TCK128BG Application Note Application circuit example (top view) 1. The figure below shows the example of configuration for TCK128BG. CONTROL GND Part number VIN LOAD VOUT TCK128BG CIN CL RL Control voltage IC Operation Low ON High OFF 1) Input capacitor An input capacitor (CIN) is not necessary for the guaranteed operation of TCK128BG. However, it is recommended to use input capacitors to reduce voltage drop due to sharp changes in output current and also for improved stability of the power supply. When used, place CIN as close to VIN pin to improve stability of the power supply. Also, due to the CIN selected, VIN < VOUT may occur, causing a reverse current to flow through the body diode of the pass-through p-ch MOSFET of the load switch IC. In this case, a higher value for CIN as compared to CL is recommended. 2) Output capacitor An output capacitor (COUT) is not necessary for the guaranteed operation of TCK128BG. However, there is a possibility of overshoot or undershoot caused by output load transient response, board layout and parasitic components of load switch IC. In this case, an output capacitor with COUT more than 0.1μF us recommended. 3) Control pin A control pin for TCK128BG is Active Low. This pin controls both the pass-through p-ch MOSFET and the discharge nch MOSFET, operated by the control voltage (VCT). The control pin is equipped with Schmitt trigger. When the control voltage level is High, p-ch MOSFET is OFF state and discharge n-ch MOSFET is ON state. When control voltage level is Low , and the state of the MOSFETs is reversed. In addition, Control pin has a tolerant function such that it can be used even if the control voltage is higher than the input voltage. 4) Control voltage for Low Quiescent current If there is a difference between the control voltage and the input voltage, the current consumption may increase due to the circuit configuration. Therefore, it is recommended to use same voltage with VIN or 0 V as the control voltage for use with ultra-low current consumption. 5) Low input voltage and output voltage attenuation When TCK128BG is used at a low VIN voltage, the RON becomes high, so there is output voltage attenuation when a large current flows. Therefore, carefully check the required output current and output voltage before use. 6) Assembly If you use potting materials that contain halogen groups such as sulfur and chlorine, characteristic defects may occur due to corrosion or conductive ions. Therefore, do not use potting materials that contain halogen groups such as sulfur or chlorine. Also, regarding the use of potting materials, be sure to thoroughly check the electrical characteristics and reliability tests of the customer before use. This product has a back side coating (BSC), but it does not provide complete protection from mechanical impacts. When picking up or testing the product, be very careful not to damage it. © 2021 Toshiba Electronic Devices & Storage Corporation 5 2021-10-28 TCK128BG 2. Power Dissipation Board-mounted power dissipation ratings are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Glass epoxy board dimension : 40 mm x 40 mm , 4 layer Metal pattern ratio : approximately 70% each layer Power dissipation PD (mW) 2000 1600 1200 800 400 0 −40 0 40 80 120 Ambient temperature Ta (°C) Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into consideration the ambient temperature, input voltage, output current etc. and applying the appropriate derating for allowable power dissipation during operation. © 2021 Toshiba Electronic Devices & Storage Corporation 6 2021-10-28 TCK128BG Representative Typical Characteristics RON - VIN RON - IOUT RON - Ta Quiescent current (ON state) - VIN © 2021 Toshiba Electronic Devices & Storage Corporation Quiescent current (ON state) - VIN 7 2021-10-28 TCK128BG Representative Typical Characteristics Standby current (OFF state) - VIN © 2021 Toshiba Electronic Devices & Storage Corporation Standby current (OFF state) - VIN 8 2021-10-28 TCK128BG tON Response VIN = 1.2 V, CL = 0.1 μF, RL = 500 Ω VIN = 1.2 V, CL = 4.7 μF, RL = 500 Ω VCT (1.0 V/div) VCT (1.0 V/div) VOUT (2.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) IIN (50 mA/div) Time (200 μs/div) Time (200 μs/div) VIN = 1.8 V, CL = 0.1 μF, RL = 500 Ω VIN = 1.8 V, CL = 4.7 μF, RL = 500 Ω VCT (1.0 V/div) VCT (1.0 V/div) VOUT (2.0 V/div) VOUT (2.0 V/div) IIN (50 mA/div) IIN (10 mA/div) Time (200 μs/div) Time (200 μs/div) VIN = 3.3 V, CL = 0.1 μF, RL = 500 Ω VIN = 3.3 V, CL = 4.7 μF, RL = 500 Ω VCT (2.0 V/div) VCT (2.0 V/div) VOUT (2.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) IIN (50 mA/div) Time (200 μs/div) Time (200 μs/div) © 2021 Toshiba Electronic Devices & Storage Corporation 9 2021-10-28 TCK128BG tOFF Response VIN = 1.2 V, CL = 0.1 μF, RL = 500 Ω VIN = 1.2 V, CL = 4.7 μF, RL = 500 Ω VCT (1.0 V/div) VCT (1.0 V/div) VOUT (2.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) IIN (10 mA/div) Time (200 μs/div) Time (200 μs/div) VIN = 1.8 V, CL = 4.7 μF, RL = 500 Ω VIN = 1.8 V, CL = 0.1 μF, RL = 500 Ω VCT (1.0 V/div) VCT (1.0 V/div) VOUT (2.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) IIN (10 mA/div) Time (200 μs/div) Time (200 μs/div) VIN = 3.3 V, CL = 0.1 μF, RL = 500 Ω VIN = 3.3 V, CL = 4.7 μF, RL = 500 Ω VCT (2.0 V/div) VCT (2.0 V/div) VOUT (2.0 V/div) VOUT (2.0 V/div) IIN (10 mA/div) IIN (10 mA/div) Time (200 μs/div) Time (200 μs/div) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 10 2021-10-28 TCK128BG Package Information WCSP4G Unit: mm Weight: 0.38 mg (typ.) © 2021 Toshiba Electronic Devices & Storage Corporation 11 2021-10-28 TCK128BG Land pattern dimensions for reference only Unit: mm 0.35 0.35 0.180 © 2021 Toshiba Electronic Devices & Storage Corporation 12 2021-10-28 TCK128BG RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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