TLP2200(TP1,F)

TLP2200 TOSHIBA Photocoupler IRED & Photo-IC TLP2200 Isolated Bus Driver High Speed Line Receiver Microprocessor System Interfaces MOS FET Gate Driver Direct Replacement for HCPL−2200 Unit: mm The TOSHIBA TLP2200 consists of an infrared emitting diode and integrated high gain, high speed photodetector. This unit is 8−lead DIP package. The detector has a three state output stage that eliminates the need for pull−up resistor, and built−in Schmitt trigger. The detector IC has an internal shield that provides a guaranteed common mode transient immunity of 1000V / μs.  Input current: IF = 1.6 mA  Power supply voltage: VCC = 4.5 to 20 V  Switching speed: 2.5MBd guaranteed  Common mode transient immunity: ±1000V / μs (min) TOSHIBA  Guaranteed performance over temperature: 0 to 85°C Weight: 0.54 g (typ.)  Isolation voltage: 2500 Vrms (min)  UL-recognized: UL 1577, File No.E67349  cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 Pin Configuration (top view) 1 Truth Table (positive logic) Input Enable H H VCC 2 Output L H Z L H L L L 8 7 6 3 GND 4 Z H 11−10C4S SHIELD 5 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND 6: VE (enable) 7: VO (output) 8: VCC Schematic ICC IF VF 2 3 IO 8 IE 7 6 SHIELD 5 VCC VO VE GND Start of commercial production 1986-07 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-17 TLP2200 Recommended Operating Conditions Characteristic Symbol Min Typ. Input current, on IF(ON) 1.6 Input current, off IF(OFF) 0 Supply voltage VCC Enable voltage high VEH Enable voltage low Fan out (TTL load) Operating temperature Max Unit ― 5 mA ― 0.1 mA 4.5 ― 20 V 2.0 ― 20 V VEL 0 ― 0.8 V N ― ― 4 ― Topr 0 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Absolute Maximum Ratings (no derating required up to 70°C) Characteristic L E D Forward current Peak transient forward current (Note 1) Rating Unit IF 10 mA IFPT 1 A Reverse voltage VR 5 V Input Power Dissipation PD 45 mW ΔPD/ΔTa -0.86 mW/°C Output current IO 25 mA Supply voltage VCC −0.5 to 20 V Output voltage VO −0.5 to 20 V Three state enable voltage VE −0.5 to 20 V Output Power Dissipation PO 100 mW ΔPO /°C -1.9 mW/°C Input power dissipation derating (Ta ≥ 70°C) D e t e c t o r Symbol Output Power Dissipation Derating (Ta ≥ 70°C) PT 210 mW Operating temperature range Total package power dissipation Topr −40 to 85 °C Storage temperature range Tstg −55 to 125 °C Lead solder temperature (10 s) (**) Tsol 260 °C BVS 2500 Vrms Isolation voltage (AC 60 s, R.H. ≤ 60 %,Ta = 25°C) (Note 2) (Note 3) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Pulse width 1 μs, 300 pps. (Note 2) Derate 4.5 mW / °C above 70 °C ambient temperature. (Note 3) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5,6,7 and 8 shorted together (**) 1.6 mm below seating plane. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP2200 Electrical Characteristics (unless otherwise specified, Ta = 0 to 85 °C, VCC = 4.5 to 20 V, IF(ON) = 1.6 to 5 mA, IF(OFF) = 0 to 0.1 mA, VEL = 0 to 0.8 V, VEH = 2.0 to 20 V) Characteristic Symbol Test Condition Min Typ.* Max VO = 5.5 V ― ― 100 VO = 20 V ― 2 500 Unit Output leakage current (VO > VCC) IOHH IF = 5 mA, VCC = 4.5 V Logic low output voltage VOL IOL = 6.4 mA (4 TTL load) ― 0.32 0.5 V Logic high output voltage VOH IOH = −2.6 mA 2.4 3.4 ― V Logic low enable current IEL VE = 0.4 V ― −0.13 −0.32 mA VE = 2.7 V ― ― 20 VE = 5.5 V ― ― 100 VE = 20 V ― 0.01 250 Logic high enable current IEH μA μA Logic low enable voltage VEL ― ― ― 0.8 V Logic high enable voltage VEH ― 2.0 ― ― V Logic low supply current ICCL IF = 0 mA VE = don't care VCC = 5.5 V ― 5 6.0 VCC = 20 V ― 5.6 7.5 Logic high supply current ICCH IF = 5 mA VE = don't care VCC = 5.5 V ― 2.5 4.5 VCC = 20 V ― 2.8 6.0 IOZL IF = 5 mA VE = 2 V VO = 0.4 V ― 1 −20 VO = 2.4 V ― ― 20 IOZH IF = 0 mA VE = 2 V VO = 5.5 V ― ― 100 VO = 20 V ― 0.01 500 VO = VCC = 5.5 V 25 55 ― VO = VCC = 20 V 40 80 ― VCC = 5.5 V −10 −25 ― VCC = 20 V −25 −60 ― High impedance state output current Logic low short circuit output current (Note 4) Logic high short circuit output current (Note 4) mA mA μA IOSL IF = 0 mA IOSH IF = 5 mA VO = GND IHYS VCC = 5 V ― 0.05 ― mA IF = 5 mA, Ta = 25 °C ― 1.55 1.7 V IF = 5 mA ― −2.0 ― mV / °C BVR IR = 10 μA, Ta = 25 °C 5 ― ― V Input capacitance CIN VF = 0 V, f = 1 MHz, Ta = 25 °C ― 45 ― pF Resistance (input−output) RI−O VI−O = 500 V R.H. ≤ 60 % (Note 3) 5×1010 1014 ― Ω Capacitance (input−output) CI−O VI−O = 0 V, f = 1 MHz (Note 3) ― 0.6 ― pF Input current hysteresis Input forward voltage Temperature coefficient of forward voltage Input reverse breakdown voltage VF ΔVF / ΔTa mA mA (**) All typ. values are at Ta = 25 °C, VCC = 5 V, IF(ON) = 3 mA unless otherwise specified. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-17 TLP2200 Switching Characteristics (unless otherwise specified, Ta = 0 to 85 °C,VCC = 4.5 to 20 V,IF(ON) = 1.6 to 5 mA, IF(OFF) = 0 to 0.1 mA) Characteristic Symbol Propagation delay time to logic high output level (Note 5) Propagation delay time to logic low output level (Note 5) tpHL tr Output fall time (90−10%) tf (Note 6) (Note 6) Test Condition Min Typ. Max ― 235 ― ― ― 400 ― 250 ― ― ― ― 35 400 ― ns ― 20 ― ns IF = 1.6 mA, VCM = 50 V, Ta = 25 °C −1000 ― ― V / μs IF = 0 mA, VCM = 50 V, Ta = 25 °C 1000 ― ― V / μs Without peaking capacitor C1 With peaking capacitor C1 Without peaking capacitor C1 With peaking capacitor C1 tpLH Output rise time (10−90%) Common mode transient immunity at logic high output Common mode transient immunity at logic low output Test Circuit 1 ― CMH 3 CML Unit ns ns (*) All typ. values are at Ta = 25 °C, VCC = 5 V, IF(ON) = 3 mA unless otherwise specified. (Note 4) Duration of output short circuit time should not exceed 10ms. (Note 5) The tpLH propagation delay is measured from the 50 % point on the leading edge of the input pulse to the 1.3 V point on the leading edge of the output pulse. The tpHL propagation delay is measured from the 50 % point on the trailing edge of the input pulse to the 1.3 V point on the trailing edge of the output pulse. (Note 6) CML is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic low state (VO < 0.8 V). CMH is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic high state (VO > 2.0 V). © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-06-17 TLP2200 tpHL, tpLH, tr and tf Output VO Monitoring Node Pulse Generator tr = tf = 5ns VO = 5V 1 50% Input IF tpLH 0mA tpHL VOH 90% Output VO Input Monitoring Node 1.3V 10% R1 VOL tf tr R1 2.15kΩ 1.1kΩ 681Ω IF(ON) 1.6mA 3mA 5mA VCC 8 2 7 3 6 GND 4 5V 619Ω IF(ON) VCC D1 to D4 : 1S1588 D1 D2 5kΩ Test Circuit 1 D3 D4 CL 5 C1=120pF C1 is peaking capacitor. The probe and jig capacitances are included in C1. CL is approximately 15pF which includes probe and stray wiring capacitance. Test Circuit 2 tpHZ, tpZH, tpLZ and tpZL Pulse Generator ZO = 50Ω tr = tf = 5ns tPLZ tPZL S1 Closed S2 Open Output VO IF=IF (ON) S1 Open S2 Closed 1.3V 0.5V VOL tPZH 1.3V 0V tPHZ 0.5V VOH ~~ 1.5V 1 IF Input VE Monitoring Node VCC 8 2 7 3 6 4 GND 5 S1 619Ω 3.0V 1.3V 0V S1 and S2 Closed VCC VO D1 CL D1 to D4 : 1S1588 D2 D3 D4 5kΩ Input VE Output VO IF=IF (OFF) 5V S2 S1 and S2 Closed CL is approximately 15pF which includes probe and stray wiring capacitance. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-06-17 TLP2200 Test Circuit 3 Common Mode Transient Immunity VCC VCM 50V 90% IF 10% tf tr 0V B A VFF VOH Output VO Switch AT A: IF = 1.6mA VCC 1 8 7 2 3 6 GND 4 VO(min) (*) 5 Output VO Monitoring Node 0.1μF Bypass VCM + − Pulse gen. ZO = 50Ω VO(max) (*) VOL Switch AT B: IF = 0mA (*) See note6 © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-17 TLP2200 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative or contact us via our website. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. https://toshiba.semicon-storage.com/ © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-06-17