TLP2200

TLP2200 TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC TLP2200 Isolated Buss Driver High Speed Line Receiver Microprocessor System Interfaces MOS FET Gate Driver Direct Replacement For HCPL−2200 The TOSHIBA TLP2200 consists of a GaAℓAs light emitting diode and integrated high gain, high speed photodetector. This unit is 8−lead DIP package. The detector has a three state output stage that eliminates the need for pull−up resistor, and built−in schmitt trigger. The detector IC has an internal shield that provides a guaranteed common mode transient immunity of 1000V / μs. Input current: IF = 1.6mA Power supply voltage: VCC = 4.5~20V Switching speed: 2.5MBd guaranteed Common mode transient immunity: ±1000V / μs (min.) Guaranteed performance over temp: 0~85°C Isolation voltage: 2500Vrms(min.) UL recognized: UL1577, file No. E67349 TOSHIBA Weight: 0.54 g 11−10C4 Unit in mm Pin Configuration (top view) 1 2 VCC 8 7 6 GND SHIELD 5 1: N.C. 2: Anode 3: Cathode 4: N.C. 5: GND 6: VE (enable) 7: VO (output) 8: VCC Truth Table (positive logic) Input H L H L Enable H H L L Output Z Z H L 3 4 Schematic IF 2 VF 3 IE ICC IO 8 7 6 SHIELD 5 VCC VO VE GND 1 2007-10-01 TLP2200 Recommended Operating Conditions Characteristic Input current, on Input current, off Supply voltage Enable voltage high Enable voltage low Fan out (TTL load) Operating temperature Symbol IF(ON) IF(OFF) VCC VEH VEL N Topr Min. 1.6 0 4.5 2.0 0 ― 0 Typ. ― ― ― ― ― ― ― Max. 5 0.1 20 20 0.8 4 85 Unit mA mA V V V ― °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Absolute Maximum Ratings (no derating required up to 70°C) Characteristic LED Forward current Peak transient forward current Reverse voltage Output current Supply voltage Output voltage Three state enable voltage Total package power dissipation (Note 2) (Note 1) Symbol IF IFPT VR IO VCC VO VE PT Topr Tstg Tsol BVS Rating 10 1 5 25 −0.5~20 −0.5~20 −0.5~20 210 −40~85 −55~125 260 2500 Unit mA A V mA V V V mW °C °C °C Vrms Operating temperature range Storage temperature range Lead solder temperature (10s) (**) Isolation voltage (AC 1min., R.H. ≤ 60%,Ta = 25°C) (Note 3) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Pulse width 1μs 300pps. (Note 2) Derate 4.5mW / °C above 70°C ambient temperature. (Note 3) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5,6,7 and 8 shorted together (**) 1.6mm below seating plane. Detector 2 2007-10-01 TLP2200 Electrical Characteristics (unless otherwise specified, Ta = 0~85°C,VCC = 4.5~20V, Characteristic Output leakage current (VO > VCC) Logic low output voltage Logic high output voltage Logic low enable current Symbol IOHH VOL VOH IEL IEH VEL VEH ICCL ICCH IOZL High impedance state output current IOZH IOSL IOSH IHYS VF ΔVF / ΔTa BVR CIN RI−O CI−O IF = 0mA VE = don't care IF = 5mA VE = don't care IF = 5mA V E = 2V IF = 0mA V E = 2V IF = 0mA IF = 5mA VO = GND VCC = 5V IF = 5mA, Ta = 25°C IF = 5mA IR = 10μA, Ta = 25°C VF = 0V, f = 1MHz, Ta = 25°C VI−O = 500V R.H. ≤ 60% VI−O = 0V, f = 1MHz Test Condition IF = 5mA, VCC = 4.5V VO = 5.5V VO = 20V Min. ― ― ― 2.4 ― ― ― ― ― ― VCC = 5.5V VCC = 20V VCC = 5.5V VCC = 20V VO = 0.4V VO = 2.4V VO = 5.5V VO = 20V VO = VCC = 5.5V VO = VCC = 20V VCC = 5.5V VCC = 20V ― 2.0 ― ― ― ― ― ― ― ― 25 40 −10 −25 ― ― ― 5 ― 10 IF(ON) = 1.6~5mA, IF(OFF) = 0~0.1mA, VEL = 0~0.8V,VEH = 2.0~20V) Typ.* ― 2 0.32 3.4 −0.13 ― ― 0.01 ― ― 5 5.6 2.5 2.8 1 ― ― 0.01 55 80 −25 −60 0.05 1.55 −2.0 ― 45 10 14 Max. 100 500 0.5 ― −0.32 20 100 250 0.8 ― 6.0 7.5 4.5 6.0 −20 20 100 500 ― ― ― ― ― 1.7 ― ― ― ― ― Unit μA V V mA μA IOL = 6.4mA (4 TTL load) IOH = −2.6mA VE = 0.4V VE = 2.7V VE = 5.5V VE = 20V Logic high enable current Logic low enable voltage Logic high enable voltage Logic low supply current Logic high supply current V V mA mA μA Logic low short circuit output current Logic high short circuit output current Input current hysteresis Input forward voltage (Note 4) (Note 4) mA mA mA V mV / °C V pF Ω pF Temperature coefficient of forward voltage Input reverse breakdown voltage Input capacitance Resistance (input−output) Capacitance (input−output) (Note 3) 5×10 (Note 3) ― 0.6 (**) All typ. values are at Ta = 25°C, VCC = 5V, IF(ON) = 3mA unless otherwise specified. 3 2007-10-01 TLP2200 Switching Characteristics (unless otherwise specified, Ta = 0~85°C,VCC = 4.5~20V,IF(ON) = 1.6~5mA,IF(OFF) = 0~0.1mA) Characteristic Propagation delay time to logic high output level (Note 5) Propagation delay time to logic low output level (Note 5) Output rise time (10−90%) Output fall time (90−10%) Output enable time to logic high Output enable time to logic low Output disable time from logic high Output disable time from logic low Common mode transient immunity at logic high output (Note 6) Common mode transient immunity at logic low output (Note 6) tr tf tpZH tpZL 2 tpHZ tpLZ CMH 3 CML IF = 0mA, VCM = 50V, Ta = 25°C 1000 ― ― V / μs ― ― IF = 1.6mA, VCM = 50V, Ta = 25°C ― ― −1000 ― ― ― ― ― ― ns ns V / μs tpHL 1 Symbol Test Cir− cuit Test Condition Without peaking capacitor C1 With peaking capacitor C1 Without peaking capacitor C1 With peaking capacitor C1 ― ― ― Min. ― ― ― ― ― ― ― ― Typ. 235 ― 250 ― 35 20 ― ― Max. ― 400 ― 400 ― ― ― ― ns ns ns ns ns Unit tpLH ns (*) All typ. values are at Ta = 25°C, VCC = 5V, IF(ON) = 3mA unless otherwise specified. (Note 4) Duration of output short circuit time should not exceed 10ms. (Note 5) The tpLH propagation delay is measured from the 50% point on the leading edge of the input pulse to the 1.3V point on the leading edge of the output pulse. The tpHL propagation delay is measured from the 50% point on the trailing edge of the input pulse to the 1.3V point on the trailing edge of the output pulse. (Note 6) CML is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic low state (VO ≤ 0.8V). CMH is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic high state (VO ≤ 2.0V). 4 2007-10-01 TLP2200 Test Circuit 1 tpHL, tpLH, tr and tf Pulse Generator tr = tf = 5ns V O = 5V IF(ON) 50% Input IF tpLH 90% Output VO 10% tr tpHL 1.3V tf VOL 0mA VOH Input Monitoring Node R1 1 2 3 4 C1=120pF GND VCC Output VO Monitoring Node VCC 619Ω D1 6 5 CL 5k Ω VCC VO 1 IF 2 3 Input VE Monitoring Node 4 GND VCC 8 7 5k Ω 6 5 CL D1 619Ω S2 8 7 D2 D3 D4 5V D1~D4 : 1S1588 R1 IF(ON) 2.15kΩ 1.6mA 1.1kΩ 3mA 681Ω 5mA C1 is peaking capacitor. The probe and jig capacitances are include in C1. CL is approximately 15pF which includes probe and stray wiring capacitance. Test Circuit 2 tpHZ, tpZH, tpLZ and tpZL Pulse Generator ZO = 50Ω tr = tf = 5ns 3.0V Input VE Output VO IF=IF (OFF) S1 Closed S2 Open Output VO IF=IF (ON) S1 Open S2 Closed tPZL 1.3V tPZH 1.3V 0V VOH ~ ~1.5V S1 and S2 Closed CL is approximately 15pF which includes probe and stray wiring capacitance. tPLZ 0.5V 1.3V 0V S1 and S2 Closed VOL 5V S1 D1~D4 : 1S1588 D2 D3 D4 tPHZ 0.5V 5 2007-10-01 TLP2200 Test Circuit 3 Common Mode Transient Immunity VCC 50V IF 0V tr tf B A 3 VFF VOH Output VO VOL Switch AT B: IF = 0mA (*) See note6 Switch AT A: IF = 1.6mA VO(MAX.) (*) VO(MIN.) (*) + Pulse gen. ZO = 50Ω 4 GND VCM 6 5 Output 1 2 VCC 8 7 VO Monitoring Node 0.1μF Bypass VCM 90% 10% − 6 2007-10-01 TLP2200 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01