TLP591B(C,F)

TLP591B TOSHIBA Photocoupler IRED & Photo-Diode Array TLP591B Unit: mm Telecommunications Programmable Controllers MOS Gate Drivers MOSFET Gate Drivers The TOSHIBA TLP591B consists of an infrared emitting diode optically coupled to a series-connected photo-diode array in a six-lead plastic DIP package. The TLP591B is suitable for MOS FET gate drivers. The TLP591B has an internal shunt resistor to optimize switching speed. • UL-recognized: UL 1577, File No.E67349 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA Forward current derating (Ta ≥ 25°C) ΔIF /°C -0.5 mA /°C Pulse forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 3 V Diode power dissipation PD 100 mW ΔPD /°C -1.0 mW/°C Tj 125 °C Forward current IFD 50 μA Reverse voltage VRD 10 V Output power dissipation PO 0.5 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55 to 125 °C Operating temperature range Topr -40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 60 s, R.H. ≤ 60 %) BVS 2500 Vrms LED Forward current Diode power dissipation derating (Ta ≥25°C) Detector Junction temperature (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together, and pins 4 and 6 shorted together. © 2019 Toshiba Electronic Devices & Storage Corporation 1 TOSHIBA 11-7A9S Weight: 0.39 g (typ.) Pin Configuration (top view) 6 1 2 3 4 1. : Anode(LED) 2. : Cathode(LED) 3. : NC 4. : Cathode 6. : Anode Start of commercial production 1990-11 2019-06-24 TLP591B Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit IF ― 20 25 mA Topr -25 ― 85 °C Forward current Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.2 1.4 1.7 V Reverse current IR VR = 3 V — — 10 μA Capacitance CT V = 0 V, f = 1 MHz — 30 60 pF Forward voltage VFD IFD = 10 μA — 7 — V Reverse current IRD VRD = 10 V — 7 — μA Min Typ. Max Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Open voltage VOC IF = 20 mA 7 8 — V Short Current ISC IF = 20 mA 24 40 — μA Min Typ. Max Unit — 0.8 — pF 5×1010 1014 — Ω 2500 — — Vrms Min Typ. Max Unit — 0.2 — ms — 3 — ms Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS AC, 60 s Switching Characteristics (Ta = 25°C) Characteristic Symbol Turn-on time tON Turn-off time Test Condition IF = 20 mA, CL = 1000 pF tOFF (Note 2) Note 2: Switching time test circuit VOUT IF IF CL VOUT 0V tON © 2019 Toshiba Electronic Devices & Storage Corporation 2 5V 1V tOFF 2019-06-24 TLP591B IF – Ta 80 60 40 20 0 0 20 60 temperature Ta 80 100 -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 (mA) 10 5 3 1.6 1.8 Forward voltage VF 2.0 30 10 5 current IF (mA) Pulse width ≤ 100 μs 3000 Ta = 25°C 1000 500 300 100 50 30 10-3 3×10-3 10-2 3×10-2 Duty cycle (V) 10-1 3×10-1 1 ratio DR ISC – IF 300 Ta = 25°C 9 (μA) 8 7 ISC 55°C 6 current 85°C 5 Short 4 3 2 100 50 30 10 Ta = 25°C 5 3 55°C 1 0 1 3 IFP – DR 10 3×10-4 2.2 VOC – IF 10 1 5000 30 1.4 0.5 Forward Ta = 25°C 1.2 0.3 (°C) 50 1 1.0 0.1 Pulse forward current IFP (mA) Forward current IF 40 IF – VF 100 VOC (V) -3.6 -0.8 -20 Ambient Open voltage ΔVF/ΔTa – IF -4.0 Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) Allowable forward current IF (mA) 100 85°C 1 3 5 10 Forward current 30 IF 50 100 1 3 5 10 Forward current (mV) 30 IF 50 100 (mA) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-24 TLP591B RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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