TPCF8102

TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −20 −20 ±8 −6 −24 2.5 0.7 5.9 −3 0.25 150 −55~150 Unit V V V A W W mJ A mJ °C °C Pulsed (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Drain power dissipation Drain power dissipation JEDEC JEITA TOSHIBA ― ― 2-3U1A Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 0.011 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 50.0 178.6 Unit °C/W °C/W Circuit Configuration 8 7 6 5 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2 3 4 1 2006-11-16 TPCF8102 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr VGS ton 0V −5 V 4.7 Ω ID = −3.0 A VOUT RL = 3.33 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±8 V, VDS = 0 V VDS = −20 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 8 V VDS = −10 V, ID = −200 μA VGS = −1.8 V, ID = −1.5 A VGS = −2.5 V, ID = −3.0 A VGS = −4.5 V, ID = −3.0 A VDS = −10 V, ID = −3.0 A Min ⎯ ⎯ −20 −12 −0.5 ⎯ ⎯ ⎯ 7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDD ∼ −16 V, VGS = −5 V, − ID = −6.0 A ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 67 36 24 14 1550 215 265 7 13 21 68 19 14 5 Max ±10 −10 ⎯ ⎯ −1.2 90 41 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF S mΩ Unit μA μA V V VDD ∼ −10 V − Duty < 1%, tw = 10 μs = Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = −6.0 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max −24 1.2 Unit A V Forward voltage (diode) 2 2006-11-16 TPCF8102 Marking (Note 5) Lot code (month) Lot No. Part No. (or abbreviation code) F3B Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) (a) (b) Note 3: VDD = −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: A dot on the lower left of the marking indicates Pin 1. 3 2006-11-16 TPCF8102 ID – VDS −5 −5 −4.5 −4 −3 −1.6 −2.5 −1.9 −2 −3 −8 −1.8 −10 −1.7 −2.5 −3 −4 −5 −6 −2 ID – VDS Common source Ta = 25°C Pulse test −1.9 −1.8 −4 Drain current ID (A) Drain current ID (A) −1.7 −4 −1.6 −1.5 VGS = −1.4 V 0 0 −2 −1.5 −1 VGS = −1.4 V Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1.0 −2 0 0 −1 −2 −3 −4 −5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −10 Common source VDS = −10 V Pulse test −0.5 VDS – VGS Common source Ta = 25°C Pulse test −8 VDS (V) Drain-source voltage Ta = 25°C Ta = −55°C −0.4 Drain current ID (A) −6 −0.3 −4 −0.2 I D = −6 A −0.1 −3 A −1.5 A −2 −4 −6 −8 −10 −2 Ta = 100°C 0 0 −0.5 −1.0 −1.5 −2.0 −2.5 0 0 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 Common source VDS = −10 V Pulse test Ta = 25°C 10 Ta = 100°C 1000 Common source Ta = 25°C Pulse test RDS (ON) – ID |Yfs| (S) Ta = −55°C Drain-source on resistance RDS (ON) (mΩ) Forward transfer admittance 100 −1.8 V −2.5 V VGS = −4.5 V 10 1 0.1 −0.1 −1 −10 −100 1 −0.1 −1 −10 −100 Drain current ID (A) Drain current ID (A) 4 2006-11-16 TPCF8102 RDS (ON) – Ta 160 Common source −100 Common source Ta = 25°C Pulse test IDR – VDS Drain-source on resistance RDS (ON) (mΩ) Drain reverse current IDR 120 (A) Pulse test 80 VGS = −1.8 V −2.5 A ID = −1.5 A −6 A ID = −1.5, −2.5 A ID = −1.5, −2.5, −6 A −10 −2.0 V −4 V −1.8 V −1 V 40 −2.5 V −4.5 V 0 −80 −40 0 40 VGS = 0 V 160 −1 0 0.4 0.8 1.2 1.6 2 80 120 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 VGS = 0 V f = 1 MHz Ta = 25°C Ciss 2.0 Common source VDS = −10 V ID = −200 μA Pulse test Vth – Ta Vth (V) Gate threshold voltage 1.5 (pF) Capacitance C 1000 Coss Crss 1.0 100 0.5 0 −80 10 0.1 1.0 10 100 −40 0 40 80 120 160 Ambient temperature Ta (°C) Drain-source voltage VDS (V) PD – Ta 3 (1) t = 5 s (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) −20 Dynamic input/output characteristics Common source I D = −6 A Ta = 25°C Pulse test −12 VGS −4 V VDD = −16 V −4 −8 V −4 −12 −20 Drain power dissipation PD (W) VDS (V) −16 VDS −16 2 Drain-source voltage 1.5 (1) DC 1 (2) t = 5 s 0.5 (2) DC −8 −8 0 0 40 80 120 160 0 0 8 16 24 32 0 40 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2006-11-16 Gate-source voltage VGS (V) 2.5 TPCF8102 rth – tw 1000 Device mounted on a glass-epoxy board (b) (Note 2b) Transient thermal impedance rth (°C/W) 100 Device mounted on a glass-epoxy board (a) (Note 2a) 10 1 0.1 1m 10 m 100 m 1 10 100 1000 Pulse width tw (s) Safe operating area −100 ID max (pulsed)* Drain current ID (A) 1 ms* −10 10 ms* −1 *: Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature −0.1 −0.1 VDSS max −1 −10 −100 Drain-source voltage VDS (V) 6 2006-11-16 TPCF8102 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-16