TPCF8402_0912

TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF8402 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • • • • Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.) Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V) N Channel IDSS = 10 μA (VDS = 30 V) Enhancement-mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg -30 -30 ±20 -3.2 -12.8 1.35 1.12 0.53 0.33 0.67 -1.6 0.11 150 −55 to 150 Rating 30 30 ±20 4.0 16.0 1.35 1.12 W 0.53 0.33 2.6 2.0 mJ A mJ °C °C Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-3U1B Drain power Single-device operation (Note 3a) dissipation (t = 5 s) Single-device value at (Note 2a) dual operation (Note 3b) Drain power Single-device operation (Note 3a) dissipation (t = 5 s) Single-device value at (Note 2b) dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Weight: 0.011 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with caution. 1 2009-12-10 TPCF8402 Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 92.6 °C/W 111.6 235.8 °C/W 378.8 Unit Marking (Note 6) Lot code (month) Lot No. Part No. (or abbreviation code) F6B Product-specific code Lot code (year) Note 7 Pin #1 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) 25.4 (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 25.4 (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: P Channel: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −1.6 A N Channel: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 2.0 A Note 5: Repetitive rating: Pulse width limited by maximum channel temperature. Note 6: “●” on the lower left of the marking indicates Pin 1. Note 7 A dot marking identifies the indication of product Labels. Without a dot: [[Pb]]/INCLUDES > MCV With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-10 TPCF8402 P-channel Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton 0V −10 4.7 Ω ID = −1.6 A VOUT RL = 9.38Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −30 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = −1 mA VGS = −4.5 V, ID = −1.6A VGS = −10 V, ID = −1.6 A VDS = −10 V, ID = −1.6 A Min ⎯ ⎯ −30 −15 −0.8 ⎯ ⎯ 2.9 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDD ≈ −24 V, VGS = −10 V, ID = −3.2 A ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 80 60 5.9 600 60 70 5.3 12 8.4 34 14 1.4 2.7 Max ±10 −10 ⎯ ⎯ −2.0 105 72 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit μA μA V V mΩ S VDD ≈ −15 V Duty ≤ 1%, tw = 10 μs Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = −3.2 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max −12.8 1.2 Unit A V 3 2009-12-10 TPCF8402 N-channel Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf toff Qg Qgs1 Qgd VDD ≈ 24 V, VGS = 10 V, ID = 4 A ton 4.7 Ω 10 V 0V ID = 2.0 A VOUT RL = 7.5Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 2.0 A VGS = 10 V, ID = 2.0 A VDS = 10 V, ID = 2.0 A Min ⎯ ⎯ 30 15 1.3 ⎯ ⎯ 3.4 ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 58 38 6.8 470 60 80 5.2 Max ±10 10 ⎯ ⎯ 2.5 77 50 ⎯ ⎯ ⎯ ⎯ ⎯ pF Unit μA μA V V mΩ S ⎯ 8.3 ⎯ ns VDD ≈ 15 V Duty ≤ 1%, tw = 10 μs ⎯ 4.0 ⎯ Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge ⎯ ⎯ ⎯ ⎯ 22 10 1.7 2.4 ⎯ ⎯ ⎯ ⎯ nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 4.0 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 16.0 −1.2 Unit A V 4 2009-12-10 TPCF8402 P-channel ID – VDS -5 -10 -6 -4 -4.5 -3.5 -3.0 Common source Ta = 25°C Pulse test -10 -10 -3.5 -3.0 -8 -4.5 -6 -6 -2.8 -4 -2.7 -2.6 -2 -2.5 VGS = -2.3 V 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 -1 -2 -3 -4 -5 ID – VDS Common source Ta = 25°C Pulse test (A) Drain current ID -3 -2.7 -2.6 -2 -2.5 -1 VGS = -2.3 0 Drain-source voltage VDS (V) Drain current ID (A) -2.8 Drain-source voltage VDS (V) ID – VGS -8 -2.0 Common source VDS = -10 V VDS – VGS Common source Drain current ID VDS (A) -6 Pulse test (V) Ta= 25℃ -1.6 Pulse test -4 Drain-source voltage -1.2 -0.8 -1.6 -0.4 -0.8 ID = -3.2A -2 Ta = −55°C 100 0 25 -2 -3 -4 -5 0 -1 0 0 -2 -4 -6 -8 -10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID 100 1000 Common source VDS = -10 V Pulse test Common source Ta = 25°C Pulse test RDS (ON) – ID Forward transfer admittance ⎪Yfs⎪ (S) Ta = −55°C 10 100 25 Drain-source ON resistance RDS (ON) (mΩ) 100 VGS = -4.5 V -10 1 -0.1 -0.3 -1 -3 -10 10 0.1 -1 -10 Drain current ID (A) Drain current ID (A) 5 2009-12-10 TPCF8402 P-channel RDS (ON) – Ta 150 10 5 3 -5.0 -10 -3.0 -1.0 VGS = 0 V IDR – VDS Drain-source ON resistance RDS (ON) (mΩ) 120 ID = -0.8A, -1.6A, -3.2A 90 VGS = -4.5V 60 ID = -0.8A, -1.6A, -3.2A 30 VGS = -10V Common source Pulse test 0 −80 −40 0 40 80 120 160 Drain reverse current IDR (A) 1 0.5 0.3 Common source Ta = 25°C Pulse test 0.1 0 0.3 0.6 0.9 1.2 1.5 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 1000 -2.0 Vth – Ta Ciss Vth (V) Gate threshold voltage Capacitance C (pF) -1.5 100 Coss Crss Common source VGS = 0 V f = 1 MHz -1.0 Common source -0.5 VDS = -10 V ID = -1mA Pulse test 0 −80 Ta = 25°C 10 -0.1 -1 -3 -5 -10 -30 -50 -100 −40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) PD – Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Dynamic input/output characteristics -30 VDS VDD = -24V -20 VDD = -6V -15 -12 -10 -6 -5 -12 Common source ID = -3.2 A Ta = 25°C Pulse test 4 8 12 16 0 -5 VGS -10 -15 Drain power dissipation PD (W) (V) 1.6 (1) 1.2 (2) 0.8 (3) 0.4 (4) 0 0 Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) ｔ＝5s -25 VDS -24 40 80 120 160 200 0 0 Ambient temperature Ta (°C) Total gate charge Qg (nC) 6 2009-12-10 Gate-source voltage Drain-source voltage VGS (V) TPCF8402 P-channel rth – tw 1000 Single pulse (4) (3) (2) (1) Transient thermal impedance rth (℃/W) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -100 ID max (pulsed) * (A) -10 1 ms * Drain current ID 10 ms * -1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. -0.1 -0.1 VDSS max -10 -100 -1 Drain-source voltage VDS (V) 7 2009-12-10 TPCF8402 N-channel ID – VDS 5 8.0 4 6.0 10 4.5 3.8 3.5 Common source Ta = 25°C Pulse test 10 10 8.0 6.0 4.5 3.8 ID – VDS Common source Ta = 25°C Pulse test 8 ID (A) 3 ID (A) 3.2 6 3.5 Drain current 2 3.0 1 VGS = 2.8 V 0 Drain current 4 3.2 2 3.0 VGS = 2.8 V 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 8 Common source 2.0 VDS = 10 V Pulse tset 6 VDS – VGS Common source Ta= 25℃ Pulse test (V) VDS Drain-source voltage 25 100 Ta = −55°C 1.6 (A) Drain current ID 1.2 4 0.8 2 0.4 1 2 ID = 4 A 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID 100 100 Common source VDS = 10 V Ta = −55°C 10 100 25 Pulse test RDS (ON) – ID Forward transfer admittance ⎪Yfs⎪ (S) Drain-source ON resistance RDS (ON) (mΩ) 4.5 30 VGS = 10V 1 Common source Ta = 25°C Pulse test 1 10 0.1 0 0.3 1 3 10 10 0.1 Drain current ID (A) Drain current ID (A) 8 2009-12-10 TPCF8402 N-channel RDS (ON) – Ta 120 Common source ID = 4 A 2A VGS = 4.5V 60 1A Pulse test 10 10 5.0 3.0 1.0 VGS = 0 V 1 0.5 0.3 Common source Ta = 25°C Pulse test 0 −80 −40 0 40 80 120 160 0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 5 3 IDR – VDS 80 40 ID = 4, 2, 1A 20 VGS = 10V Ambient temperature Ta (°C) Drain reverse current IDR (A) 100 Drain-source ON resistance RDS (ON) (m Ω) Drain-source voltage VDS (V) Capacitance – VDS 1000 Ciss 3 Vth – Ta (pF) 100 Vth (V) Crss 10 Gate threshold voltage Coss 2 Capacitance C Common source VGS = 0 V f = 1 MHz Ta = 25°C 1 Common source VDS = 10 V ID = 1mA Pulse test 1 0.1 0.3 1 3 5 10 30 50 100 0 −80 −40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) PD – Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Dynamic input/output characteristics 30 15 Drain power dissipation PD (W) (V) 1.6 (1) 1.2 (2) 0.8 (3) 0.4 (4) 0 0 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) ｔ＝5s VDS VDD = 24V 20 VDD = 6V 15 12 10 6 5 24 VGS 10 Drain-source voltage Common source 12 ID = 4.0A Ta = 25°C Pulse test 0 16 5 40 80 120 160 200 0 0 4 8 12 Ambient temperature Ta (°C) total gate charge Qg (nC) 9 2009-12-10 Gate-source voltage VGS (V) 25 VDS TPCF8402 N-channel rth – tw 1000 Single Pulse (4) (3) (2) (1) Transient thermal impedance rth (℃/W) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 100 ID max (Pulsed) * (A) 10 1 ms * Drain current ID 10 ms * 1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 10 100 1 Drain-source voltage VDS (V) 10 2009-12-10 TPCF8402 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2009-12-10