TPCP8006_1

TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8006 Notebook PC Applications Portable Equipment Applications 0.33 ± 0.05 Unit: mm 8 0.05 M • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.) High forward transfer admittance:|Yfs| = 36 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA) 0.475 A 5 2.4 ± 0.1 2.8 ± 0.1 0.05 A M 1 0.65 2.9 ± 0.1 4 B B 0.8 ± 0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Rating 20 20 ±12 9.1 36.4 1.68 W Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range PD EAS IAR EAR Tch Tstg 0.84 21.5 9.1 0.168 150 −55 to 150 mJ A mJ °C °C Unit V V V A S 0.025 S 0.17 ± 0.02 ＋0.1 0.28 －0.11 ＋0.13 1.12 －0.12 ＋0.13 1.12 －0.12 0.28 ＋0.1 －0.11 1,2,3 ：SOURCE 4 ：GATE 5,6,7,8：DRAIN Drain power dissipation (t = 5 s) (Note 2a) JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3V1K Weight: 0.017g (typ.) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 8 2 7 3 6 4 5 Marking (Note 5) 8006 * 1 2 3 4 Lot No. 1 2009-12-08 TPCP8006 Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Max 74.4 Unit °C/W Rth (ch-a) 148.8 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8t (Unit: mm) FR-4 25.4 × 25.4 × 0.8t (Unit: mm) (a) (b) Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 9.1 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: ● on the lower left of the marking indicates Pin 1. * Weekly code (Three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2009-12-08 TPCP8006 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“Miller”) charge tf toff Qg Qgs1 Qgd VDD ≈ 16 V, VGS = 5 V, ID = 9.1 A Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 4.7 Ω VGS 5V 0V ID = 4.5 A VOUT RL = 2.22 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±12 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −12 V VDS = 10 V, ID = 1 mA VGS = 2.5 V, ID = 4.5 A VGS = 4.5 V, ID = 4.5 A VDS = 10 V, ID = 4.5 A Min ⎯ ⎯ 20 8 0.5 ⎯ ⎯ 18 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 9.5 6.5 36 1480 330 470 8 16 19 53 22 4 7 Max ±100 10 ⎯ ⎯ 1.2 13.7 10 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit nA μA V V mΩ S VDD ≈ 10 V Duty ≤ 1%, tw = 10 μs Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = 9.1 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max 36.4 −1.2 Unit A V 3 2009-12-08 TPCP8006 ID – VDS 10 4 8 3 2 1.9 1.8 Common source Ta = 25°C Pulse test 1.7 6 20 4 16 3 2 ID – VDS 1.9 Common source Ta = 25°C Pulse test 1.8 (A) ID ID 1.6 (A) 12 Drain current 4 Drain current 8 1.7 1.5 2 VGS = 1.4 V 0 4 1.6 1.5 VGS = 1.4 V 0 0.4 0.8 1.2 1.6 2 0 0.2 0.4 0.6 0.8 1 0 Drain−source voltage VDS (V) Drain−source voltage VDS (V) ID – VGS 20 VDS – VGS 1 VDS (V) ID (A) 16 Common source VDS = 10 V Pulse test 0.8 Common source Ta = 25°C Pulse test Drain−source voltage 12 0.6 Drain current 8 100 4 25 0 Ta = −55°C 0.4 0.2 4.5 2.3 0 2 4 ID = 9.1 A 6 8 10 0 0.5 1 1.5 2 2.5 3 0 Gate−source voltage VGS (V) Gate−source voltage VGS (V) |Yfs| – ID (S) 100 Common source VDS = 10 V Pulse test Ta = −55°C 100°C 25°C 10 100 Common source Ta = 25°C Pulse test RDS (ON) – ID |Yfs| Forward transfer admittance Drain−source ON-resistance RDS (ON) (mΩ) 10 VGS = 2.5 V 4.5 1 0.1 1 10 100 1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2009-12-08 TPCP8006 RDS (ON) – Ta 20 Common source Pulse test 16 ID = 2.3,4.5,9.1 A 12 VGS = 2.5 V 8 ID = 2.3,4.5,9.1 A 4.5 V 100 IDR – VDS (A) Common source Ta = 25°C Pulse test 5 10 Drain−source ON-resistance RDS (ON) (mΩ) IDR 3 1 VGS = −1 V Drain reverse current 0 1 4 0 −80 −40 0 40 80 120 160 0.1 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 Ambient temperature Ta (°C) Drain−source voltage VDS (V) C – VDS 10000 2 Vth – Ta Vth (V) Gate threshold voltage Ciss C (pF) 1.6 1.2 Capacitance 1000 Coss Common source VGS = 0 V f = 1 MHz Ta = 25°C 0.1 1 Crss 0.8 0.4 Common source VDS = 10 V ID = 1mA Pulse test −40 0 40 80 120 160 100 0.01 10 100 0 −80 Drain−source voltage VDS (V) Ambient temperature Ta (°C) PD – Ta 2.0 Dynamic input/output characteristics 24 VDS (V) VGS 9 8V PD VDS Drain power dissipation Drain−source voltage 1 (2) 12 4V VDD = 16 V 6 0.5 6 3 0 0 40 80 120 160 0 0 10 20 30 40 0 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2009-12-08 Gate−source voltage VGS 1.5 18 (V) (1) (1) Device mounted on a glass-epoxy board (a)(Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t=5s Common source ID = 9.1 A Ta = 25°C Single Pulse test 12 (W) TPCP8006 rth(j−c) − tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) Transient thermal impedance rth (°C/W) 100 (1) 10 1 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 100 ID max (pulsed)* 1 m s* (A) 10 t = 10 ms* Drain current ID 1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 10 VDSS max 100 Drain−source voltage VDS (V) 6 2009-12-08 TPCP8006 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-12-08