TPCP8J01

TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type TPCP8J01 Notebook PC Applications Portable Equipment Applications • • • • • • Lead(Pb)-Free Small mounting area due to small and thin package Low drain-source ON resistance: P Channel RDS (ON) = 27 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = −10 μA (VDS = −32 V) Enhancement-mode: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Rating −32 −32 ±20 −5.5 −22 2.14 Unit V V V A S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 1. Emitter 2. Drain 3. Drain 4. Drain 5. Source 6. Gate 7. Base 8. Collector JEDEC JEITA TOSHIBA ― ― 2-3V1G Drain power dissipation W 1.06 W Weight: 0.011 g (typ.) 5.8 −3 0.21 mJ A mJ Circuit Configuration 8 7 6 5 BRT Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC (Note 1) Symbol VCBO VCEO VEBO IC PC Rating 50 50 6 100 200 Unit V V V mA mW R1 R2 1 2 2.8±0.1 3 4 Marking (Note5) 8 7 6 5 Collector power dissipation Note: For Notes 1 to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with caution. 8J01 ※ 1 2 3 Lot No. 4 1 2006-11-17 TPCP8J01 Common Absolute Maximum Ratings (Ta=25°C ) Characteristics Junction temperature Storage temperature range Symbol TJ Tstg Rating 150 −55~150 Unit °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Symbol Rth (ch-a) Max 58.4 Unit °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 117.9 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 （Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: “•“ on the lower left of the marking indicates Pin 1. ※ Weekly code (three digits): Week of manufacture (01 for the first week of the year, continues up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPCP8J01 Electrical Characteristics (Ta = 25°C) MOSFET Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 4.7 Ω 0V VGS −10 V ID = −3.0 A VOUT RL = 5 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −32 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = − 1mA VGS = −4 V, ID = −3.0 A VGS = −10 V, ID = −3.0 A VDS = −10 V, ID = −3.0 A Min ⎯ ⎯ −32 −15 −0.8 ⎯ ⎯ 4.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 38 27 9.6 1760 200 210 2.8 12 22 90 34 4.7 7.2 Max ±10 −10 ⎯ ⎯ −2.0 49 35 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit μA μA V V mΩ S VDD ∼ −15 V − Duty < 1%, tw = 10 μs = VDD ∼ −24 V, VGS = −10 V, − ID = −5.5 A Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current (Pulse) (Note 1) Forward voltage (diode) Symbol IDRP VDSF Test Condition ⎯ IDR = −5.5 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max −22 1.2 Unit A V 3 2006-11-17 TPCP8J01 BRT Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Input resistor Resistor ratio Symbol ICBO ICEO IEBO hFE VCE (sat) VI (ON) VI (OFF) fT Cob R1 R1/R2 Test Condition VCB = 50 V, IE = 0 VCB = 50 V, IE = 0 VEB = 6 V, IC= 0 VCE = 5 V, IC= 10 mA IC = 5 mA, IB = 0.25 mA VCE = 0.2 V, IC = 5 mA VCE = 5 V, IC = 0.1 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz ⎯ ⎯ Min ⎯ ⎯ 0.081 80 ⎯ 0.7 0.5 ⎯ ⎯ 7 0.191 Typ. ⎯ ⎯ ⎯ ⎯ 0.1 ⎯ ⎯ 250 3 10 0.213 Max 100 500 0.15 ⎯ 0.3 1.8 1.0 ⎯ 6 13 0.232 V V V MHz pF kΩ mA Unit nA 4 2006-11-17 TPCP8J01 MOSFET ID – VDS −5 −10 −4.5 −3 −3.5 −3 −2.4 −2 −2.3 −1 −2.2 VGS = −2.1V 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 0 0 −1 −2 −3 −2. −2.8 −2.6 Common source Ta = 25°C Pulse test −10 −3 −3.5 −2.8 ID – VDS Common source Ta = 25°C Pulse test −2.7 −2.6 (A) (A) −4 −8 −10 −6 −4.5 Drain current ID Drain current ID −2.5 −2.5 −4 −2.4 −2.3 −2.2 VGS = −2.1 V −4 −5 −2 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −10 Common source VDS = −10 V −8 Pulse test −0.5 VDS – VGS Common source Ta = 25℃ Pulse test (V) VDS Drain-source voltage −0.4 (A) −6 Drain current ID −0.3 −8 Ta = −55°C −4 100 25 0 0 −1 −2 −3 −4 −5 −0.2 ID = −5.5 A −0.1 −1.3 0 0 −2 −4 −6 −8 −2.7 −10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID −100 RDS (ON) – ID 1000 Common source Ta = 25°C Pulse test 100 −4 |Yfs| (S) Common source VDS = −10 V Pulse test Ta = −55°C Forward transfer admittance −10 100 25 Drain-source ON resistance RDS (ON) (mΩ) VGS = −10 V 10 −1 −0.1 −0.1 −1 −10 −100 1 −0.1 −1 −10 −100 Drain current ID (A) Drain current ID (A) 5 2006-11-17 TPCP8J01 RDS (ON) – Ta 80 Common source Pulse test ID = −5.5A −2.7A −1.3A 40 −2.7A ID = −5.5A −1.3A −100 Common source Ta = 25°C Pulse test IDR – VDS 60 Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) ( mΩ) −4.5 −10 −10 −3 VGS = −4 V 20 VGS = −10 V −2 −1 VGS = 0 V 0.8 1.2 1.6 2 0 −80 −40 0 40 80 120 160 −1 0 0.4 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 Ciss −4 Vth – Ta Common source VDS = −10 V ID = −1 mA −3 Pulse test (pF) 1000 Coss 100 Crss Gate threshold voltage −100 Capacitance C Vth (V) −2 10 Common source VGS = 0 V f = 1 MHz Ta = 25°C −1 1 −0.1 −1 −10 0 −80 −40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) PD – Ta 2.5 (1) t = 5 s (1) Device mounted on a glass-epoxy board(a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) −40 ID = −5.5 A Ta = 25°C −30 Pulse test Dynamic input/output characteristics Common source −16 Drain power dissipation PD (W) (V) 2 VDS −12 VDD = −24 V Drain-source voltage (2) t = 5 s 1 (1) DC −20 VDS −12 −8 0.5 (2) DC −10 VGS −4 0 0 40 80 120 160 0 0 −10 −20 −30 −40 0 −50 Ambient temperature Ta (°C) Total gate charge Qg (nC) 6 2006-11-17 Gate-source voltage 1.5 −6 VGS (V) TPCP8J01 rth – tw 1000 Device mounted on a glass-epoxy board (b) (Note 2b) 100 Transient thermal impedance rth (°C/W) Device mounted on a glass-epoxy board (a) 10 1 0.1 0.001 Single Pluse 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 100 ID max (pulsed)* (A) Drain current ID 10 1 m s* 10 ms* 1 *:Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. VDSS max 10 100 0.1 0.1 1 Drain-source voltage VDS (V) 7 2006-11-17 TPCP8J01 BRT 8 2006-11-17 TPCP8J01 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2006-11-17