TS9001-1IJ5

TS9001 1.6V Nanopower Comparator with Internal Reference FEATURES ♦ Improved Electrical Performance over MAX9117-MAX9118 ♦ Guaranteed to Operate Down to +1.6V ♦ Ultra-Low Supply Current: 600nA ♦ Internal 1.252V ±1% Reference ♦ Input Voltage Range Extends 200mV Outsidethe-Rails ♦ No Phase Reversal for Overdriven Inputs ♦ Output Stage: Push-pull (TS9001-1) Open-Drain (TS9001-2) ♦ Crowbar-Current-Free Switching ♦ Internal Hysteresis for Clean Switching ♦ 5-pin SC70 Packaging DESCRIPTION The nanopower TS9001-1/2 analog comparators guarantee +1.6V operation, draw very little supply current, and have robust input stages that can tolerate input voltages beyond the power supply. Both products are Touchstone Semiconductor’s first analog comparator products in its “NanoWatt Analog” high-performance analog integrated circuits portfolio. The TS9001-1/2 draw 600nA of supply current and include an on-board +1.252V±1% reference. These comparators are also electrically and form-factor identical to the MAX9117 and the MAX9118 family of analog comparators. Both comparators offer a 33% improvement in voltage reference initial accuracy and the TS9001-1 offers 73% higher output current drive. The TS9001-1’s push-push output drivers were designed to drive 5mA loads from one supply rail to the other supply rail. The TS9001-2’s open-drain output stage make it easy to incorporate this analog comparator into systems that operate on different supply voltages. Both devices are available in an ultra-small 5-pin SC70 package. APPLICATIONS 2-Cell Battery Monitoring/Management Medical Instruments Threshold Detectors/Discriminators Sensing at Ground or Supply Line Ultra-Low-Power Systems Mobile Communications Telemetry and Remote Systems TYPICAL APPLICATION CIRCUIT PART TS9001-1 TS9001-2 INTERNAL REFERENCE Yes Yes OUTPUT STAGE Push-Pull Open-Drain INConnection REF REF SUPPLY CURRENT (nA) 600 600 NanoWatt Analog and the Touchstone Semiconductor logo are registered trademarks of Touchstone Semiconductor, Incorporated. Page 1 © 2011 Touchstone Semiconductor, Inc. All rights reserved. TS9001 ABSOLUTE MAXIMUM RATINGS Supply Voltage (VCC to VEE) ............................................ +6V Voltage Inputs (IN+, IN-, REF) .... (VEE - 0.3V) to (VCC + 0.3V) Output Voltage TS9001-1 ................................. (VEE - 0.3V) to (VCC + 0.3V) TS9001-2 ............................................... (VEE - 0.3V) to +6V Current Into Input Pins ................................................ ±20mA Output Current ............................................................ ±50mA Output Short-Circuit Duration ............................................ 10s Continuous Power Dissipation (TA = +70°C) 5-Pin SC70 (Derate 2.5mW/°C above +70°C) ....... 200 mW Operating Temperature Range ...................... -40°C to +85°C Junction Temperature ................................................ +150°C Storage Temperature Range ....................... -65°C to +150°C Lead Temperature (soldering, 10s) ............................... +300° Electrical and thermal stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime. PACKAGE/ORDERING INFORMATION ORDER NUMBER PART CARRIER QUANTITY MARKING TS9001-1IJ5 TS9001-2IJ5 TAF TAG Tape & Reel Tape & Reel 3000 3000 Lead-free Program: Touchstone Semiconductor supplies only lead-free packaging. Please consult Touchstone Semiconductor for products specified with wider operating temperature ranges. Page 2 TS9001DS r1p0 RTFDS TS9001 ELECTRICAL CHARACTERISTICS: TS9001-1/2 VCC = +5V, VEE = 0V, VIN+ = VREF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C. See Note 1 PARAMETER Supply Voltage Range Supply Current IN+ Voltage Range Input Offset Voltage Input-Referred Hysteresis Input Bias Current Power-Supply Rejection Ratio SYMBOL VCC ICC VIN+ VOS VHB IB PSRR CONDITIONS Inferred from the PSRR test VCC = 1.6V VCC = 5V MIN TA = TMIN to TMAX 1.6 0.6 0.68 VEE - 0.2 2 4 0.15 TYP MAX 5.5 1 1.30 1.60 VCC + 0.2 5 10 1 2 1 300 400 150 200 110 50 200 300 100 150 0.002 60 6 90 10 12 15 25 50 21 28 3.5 2 1.2 TA = +25°C TA = TMIN to TMAX BW = 10Hz to 100kHz BW = 10Hz to 100kHz, CREF = 1nF VCC = 1.6V to 5.5V 1.2395 1.2332 1.252 40 0.6 0.2 0.1 ±0.2 1.2645 1.2708 µs µs ms V ppm/°C mVRMS mV/V mV/nA 1 μA mA mV μA V mV mV nA mV/V UNITS Output-Voltage Swing High VCC - VOH Output-Voltage Swing Low VOL Output Leakage Current Output Short-Circuit Current High-to-Low Propagation Delay (Note 4) ILEAK ISC tPD- Low-to-High Propagation Delay (Note 4) tPD+ Rise Time Fall Time Power-Up Time Reference Voltage Reference Voltage Temperature Coefficient Reference Output Voltage Noise Reference Line Regulation Reference Load Regulation tRISE tFALL tON VREF TCVREF en ∆VREF/ ∆VCC TA = +25°C TA = +25°C TA = TMIN to TMAX Inferred from the output swing test TA = +25°C (Note 2) TA = TMIN to TMAX (Note 3) TA = +25°C TA = TMIN to TMAX VCC = 1.6V to 5.5V, TA = TMIN to TMAX TA = +25°C TS9001-1, VCC = 5V, ISOURCE = 5mA TA = TMIN to TMAX VCC = 1.6V, TA = +25°C TS9001-1, ISOURCE = 1mA VCC = 1.6V, TA = TMIN to TMAX TA = +25°C VCC = 5V, ISINK = 5mA TA = TMIN to TMAX VCC = 1.6V, TA = +25°C ISINK = 1mA VCC = 1.6V, TA = TMIN to TMAX TS9001-2 only, VO = 5.5V VCC = 5V Sourcing, VO = VEE VCC = 1.6V VCC = 5V Sinking, VO = VCC VCC = 1.6V VCC = 1.6V VCC = 5V VCC = 1.6V TS9001-1 only VCC = 5V VCC = 1.6V, RPULLUP = 100kΩ TS9001-2 only VCC = 5V, RPULLUP = 100kΩ TS9001-1 only, CL = 15pF CL = 15pF 200 100 mV µs µs ∆VREF/ ∆IOUT ∆IOUT = 10nA Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by device characterization, not production tested. Note 2: VOS is defined as the center of the hysteresis band at the input. Note 3: The hysteresis-related trip points are defined by the edges of the hysteresis band and measured with respect to the center of the hysteresis band (i.e., VOS). See Figure 2. Note 4: The propagation delays are specified with an input overdrive (VOVERDRIVE) of 100mV and an output load capacitance of CL = 15pF. VOVERDRIVE is defined above and is beyond the offset voltage and hysteresis of the comparator input. Reference voltage error should also be included. TS9001DS r1p0 Page 3 RTFDS TS9001 PIN FUNCTIONS TS9001-1 TS9001-2 SC70-5 1 2 3 4 — 5 — NAME OUT VEE IN+ REF/INREF VCC INFUNCTION Comparator Output Negative Supply Voltage Comparator Noninverting Input 1.252V Reference Output/Comparator Inverting Input 1.252V Reference Output Positive Supply Voltage Comparator Inverting Input BLOCK DIAGRAMS DESCRIPTION OF OPERATION Guaranteed to operate from +1.6V supplies, the TS9001-1 and the TS9001-2 analog comparators only draw 600nA supply current, feature a robust input stage that can tolerate input voltages 200mV beyond the power supply rails, and include an onboard +1.252V ±1% voltage reference. To insure clean output switching behavior, both analog comparators feature 4mV internal hysteresis. The TS9001-1’s push-pull output drivers were designed to minimize supply-current surges while driving ±5mA loads with rail-to-rail output swings. The opendrain output stage TS9001-2 can be connected to supply voltages above VCC to an absolute maximum of 6V above VEE. Where wired-OR logic connections are needed, their open-drain output stages make it easy to use this analog comparator. Input Stage Circuitry The robust design of the analog comparators’ input stage can accommodate any differential input voltage from VEE - 0.2V to VCC + 0.2V. Input bias currents are typically ±0.15nA so long as the applied input voltage remains between the supply rails. ESD protection diodes - connected internally to the supply rails - protect comparator inputs against overvoltage conditions. However, if the applied input voltage exceeds either or both supply rails, an increase in input current can occur when these ESD protection diodes start to conduct. Page 4 TS9001DS r1p0 RTFDS TS9001 Output Stage Circuitry Many conventional analog comparators can draw orders of magnitude higher supply current when switching. Because of this behavior, additional power supply bypass capacitance may be required to provide additional charge storage during switching. The design of the TS9001-1’s rail-to-rail output stage implements a technique that virtually eliminates supply-current surges when output transitions occur. The supply-current change as a function of output transition frequency exhibited by these analog comparators is very small. Material benefits of this attribute to battery-power applications are the increase in operating time and in reducing the size of power-supply filter capacitors. Internal Voltage Reference The TS9001-1/2’s internal +1.252V voltage reference exhibits a typical temperature coefficient of 40ppm/°C over the full -40°C to +85°C temperature range. An equivalent circuit for the reference section is illustrated in Figure 1. Since the output impedance of the voltage reference Is typically 200kΩ, its output can be bypassed with a low-leakage capacitor and is stable for any capacitive load. Figure 1: TS9001’s Internal VREF Output Equivalent Circuit An external buffer – such as the TS1001 – can be used to buffer the voltage reference output for higher output current drive or to reduce reference output impedance. APPLICATIONS INFORMATION Low-Voltage, Low-Power Operation Because they were designed specifically for lowpower, battery-operated applications, the TS90011/2 comparators are an excellent choice. Under nominal conditions, approximate operating times for this analog comparator family is illustrated in Table 1 for a number of battery types and their corresponding charge capacities. Internal Hysteresis As a result of circuit noise or unintended parasitic feedback, many analog comparators often break into oscillation within their linear region of operation Table 1: Battery Applications using the TS9001 BATTERY TYPE Alkaline (2 Cells) Nickel-Cadmium (2 Cells) Lithium-Ion (1 Cell) Nickel-Metal- Hydride (2 Cells) RECHARGEABLE No Yes Yes Yes VFRESH (V) 3.0 2.4 3.5 2.4 VEND-OF-LIFE (V) 1.8 1.8 2.7 1.8 CAPACITY, AA SIZE (mA-h) 2000 750 1000 1000 TS9001/TSM9003 OPERATING TIME (hrs) 6 2.5 x 10 937,500 1.25 x 10 1.25 x 10 6 6 especially when the applied differential input voltage approaches 0V (zero volt). Externally-introduced hysteresis is a well-established technique to stabilizing analog comparator behavior and requires external components. As shown in Figure 2, adding comparator hysteresis creates two trip points: VTHR (for the rising input voltage) and VTHF (for the falling input voltage). The hysteresis band (VHB) is defined as the voltage difference between the two trip points. When a comparator’s input voltages are equal, hysteresis effectively forces one comparator input to move quickly past the other input, moving the input TS9001DS r1p0 Page 5 RTFDS TS9001 out of the region where oscillation occurs. Figure 2 illustrates the case in which an IN- input is a fixed voltage and an IN+ is varied. If the input signals were reversed, the figure would be the same with an inverted output. To save cost and external pcb area, an internal 4mV hysteresis circuit was added to the TS9001-1/2. point is (VREF - VOUT)/R2. In solving for R2, there are two formulas – one each for the two possible output states: R2 = VREF/IR2 or R2 = (VCC - VREF)/IR2 From the results of the two formulae, the smaller of the two resulting resistor values is chosen. For example, when using the TS9001-1 (VREF = 1.252V) at a VCC = 3.3V and if IR2 = 0.2μA is chosen, then the formulae above produce two resistor values: 6.26MΩ and 10.24MΩ - the 6.2MΩ standard value for R2 is selected. Figure 2: TS9001 Threshold Hysteresis Band Adding Hysteresis to the TS9001-1 Push-pull Output Option The TS9001-1 exhibits an internal hysteresis band (VHYSB) of 4mV. Additional hysteresis can be 2) Next, the desired hysteresis band (VHYSB) is set. In this example, VHYSB is set to 100mV. Resistor R1 is calculated according to the following equation: R1 = R2 x (VHYSB/VCC) and substituting the values selected in 1) and 2) above yields: R1 = 6.2MΩ x (100mV/3.3V) = 187.88kΩ. The 187kΩ standard value for R1 is chosen. 3) 4) Figure 3: Using Three Resistors Introduces Additional Hysteresis in the TS9001-1. generated with three external resistors using positive feedback as shown in Figure 3. Unfortunately, this method also reduces the hysteresis response time. The procedure to calculate the resistor values for the TS9001-1 is as follows: 1) The trip point for VIN rising (VTHR) is chosen such that VTHR > VREF x (R1 + R2)/R2 (VTHF is the trip point for VIN falling). This is the threshold voltage at which the comparator switches its output from low to high as VIN rises above the trip point. In this example, VTHR is set to 3V. With the VTHR from Step 4 above, resistor R3 is then computed as follows: R3 = 1/[VTHR/(VREF x R1) - (1/R1) - (1/R2)] R3 = 1/[3V/(1.252V x 187kΩ) - (1/187kΩ) - (1/6.2MΩ)] = 136.9kΩ In this example, a 137kΩ, 1% standard value resistor is selected for R3.. 5) Setting R2. As the leakage current at the IN pin is less than 2nA, the current through R2 should be at least 0.2μA to minimize offset voltage errors caused by the input leakage current. The current through R2 at the trip Page 6 TS9001DS r1p0 RTFDS TS9001 6) The last step is to verify the trip voltages and hysteresis band using the standard resistance values: For VIN rising: VTHR = VREF x R1 [(1/R1) + (1/R2) + (1/R3)] = 3V For VIN falling: VTHF = VTHR - (R1 x VCC/R2) = 2.9V and Hysteresis Band = VTHR – VTHF = 100mV Adding Hysteresis to the TS9001-2 Open-Drain Option The TS9001-2 has open-drain output and requires an external pull-up resistor to VCC as shown in Figure 4. Additional hysteresis can be generated where the smaller of the two resulting resistor values is the best starting value. 2) As before, the desired hysteresis band (VHYSB) is set to 100mV. 3) Next, resistor R1 is then computed according to the following equation: R1 = (R2 + R4) x (VHYSB/VCC) 4) The trip point for VIN rising (VTHR) is chosen (again, remember that VTHF is the trip point for VIN falling). This is the threshold voltage at which the comparator switches its output from low to high as VIN rises above the trip point. 5) With the VTHR from Step 4 above, resistor R3 is computed as follows: R3 = 1/[VTHR/(VREF x R1) - (1/R1) - (1/R2)] 6) As before, the last step is to verify the trip voltages and hysteresis band with the standard resistor values used in the circuit: For VIN rising: VTHR = VREF x R1 x (1/R1+1/R2+1/R3) For VIN falling: VTHF = VREF x R1 x (1/R1+1/R3+1/(R2+R4)) -(R1/(R2+R4)) x VCC Figure 4: Using Four Resistors Introduces Additional Hysteresis in the TS9001-2. using positive feedback; however, the formulae differ slightly from those of the push-pull option TS9001-1. The procedure to calculate the resistor values for the TS9001-2 is as follows: 1) As in the previous section, resistor R2 is chosen according to the formulae: R2 = VREF/0.2µA or R2 = (VCC - VREF)/0.2μA - R4 and Hysteresis Band is given by VTHR - VTHF PC Board Layout and Power-Supply Bypassing While power-supply bypass capacitors are not typically required, it is good engineering practice to use 0.1uF bypass capacitors close to the device’s power supply pins when the power supply impedance is high, the power supply leads are long, or there is excessive noise on the power supply traces. To reduce stray capacitance, it is also good engineering practice to make signal trace lengths as short as possible. Also recommended are a ground plane and surface mount resistors and capacitors. TS9001DS r1p0 Page 7 RTFDS TS9001 PACKAGE OUTLINE DRAWING 5-Pin SC70 Package Outline Drawing (N.B., Drawings are not to scale) 0.65 TYP. 0.15 - 0.30 2 5 4 1.80 - 2.40 1 2 3 1.30 TYP. 8º - 12º ALL SIDE LEAD FRAME THICKNESS 0.10 - 0.18 0.15 TYP. GAUGE PLANE 1.15 - 1.35 0.10 MAX 0.26 - 0.46 0.275 - 0.575 0º - 8º 1.80 - 2.20 1 0.800 – 0.925 0.40 – 0.55 1.00 MAX 0.00 - 0.10 NOTES: 1 DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 2 3. 4 5. 6. 7. DOES NOT INCLUDE INTER-LEAD FLASH OR PROTRUSIONS. DIE IS FACING UP FOR MOLDING. DIE IS FACING DOWN FOR TRIM/FORM. ALL SPECIFICATION COMPLY TO JEDEC SPEC MO-203 AA CONTROLLING DIMENSIONS IN MILIMITERS. ALL SPECIFICATIONS REFER TO JEDEC MO-203 AA LEAD SPAN/STAND OFF HEIGHT/COPLANARITY ARE CONSIDERED AS SPECIAL CHARACTERISTIC Information furnished by Touchstone Semiconductor is believed to be accurate and reliable. However, Touchstone Semiconductor does not assume any responsibility for its use nor for any infringements of patents or other rights of third parties that may result from its use, and all information provided by Touchstone Semiconductor and its suppliers is provided on an AS IS basis, WITHOUT WARRANTY OF ANY KIND. Touchstone Semiconductor reserves the right to change product specifications and product descriptions at any time without any advance notice. No license is granted by implication or otherwise under any patent or patent rights of Touchstone Semiconductor. Touchstone Semiconductor assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using Touchstone Semiconductor components. To minimize the risk associated with customer products and applications, customers should provide adequate design and operating safeguards. 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