POWER MOSFETs FOR STEPPER MOTORS
INTEGRATED CIRCUITS
TMC1320-LA DATASHEET
Dual N & P-Channel 30V Power MOSFET with low on-resistance and fast switching performance.
High energy efficiency and good thermal performance.
APPLICATIONS
TMC1320 MOSFETs
TRINAMIC 2-phase
motor drivers:
fit best with
bipolar stepper
TMC262: up to 3.5A RMS motor current
with 4xTMC1320-LA
TMC248: up to 3A RMS motor current
with 4xTMC1320
TMC249: up to 3A RMS motor current
with 4xTMC1320-LA
PRODUCT SUMMARY
BVDSS
RDS(ON)
ID
FEATURES
N-CH
P-CH
30V
30mΩ
7.3A
-30V
60mΩ
-5.3A
AND
DESCRIPTION
The advanced TMC1320-LA Power MOSFET
provides the designer with the best
combination of fast switching, low onresistance and cost-effectiveness. The
highly energy efficient TMC1320 is
intended for power conversion and
power management applications that
require high efficiency and power
density.
The PQFN 3x3 package has a backside
heat sink. It is compatible with other
DFN3 packages offering attractive thermal
and electrical performance combined
with a very small footprint.
BENEFITS
N & P-Channel MOSFET Half Bridge Device
Simple Drive Requirement
Good Thermal Performance
Fast Switching Performance for quick motor reaction
PQFN Package, 3x3mm; similar to DFN3x3 EP
RoHS Compliant and Halogen-Free
TMC262 WITH 4X TMC1320-LA MOSFETS
TMC262
P
D
S
N
+VM
S
G
D
D
N
S
P
TMC1320
Motor coil B
Description
N and P-channel enhancement mode power MOSFET
TRINAMIC Motion Control GmbH & Co. KG
Hamburg, Germany
TMC1320
P
G
Motor coil A
Order code
TMC1320-LA
G
D
RSENSE
G
S
HB1
RSENSE
D
HB2
TMC1320
S
N
+VM
D
BMB1
G
S
N
G
BMB2
D
P
S
10R
G
D
LB2
TMC1320
LB1
SRB
SRA
LA1
LA2
BMA2
BMA1
HA2
HA1
10R
G
S
Size
3.1 x 3.1 mm2
TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
Table of Contents
TABLE OF CONTENTS ........................................................................................................................................................... 2
1
PIN ASSIGNMENTS ...................................................................................................................................................... 3
2
ABSOLUTE MAXIMUM RATINGS .............................................................................................................................. 3
3
THERMAL DATA ............................................................................................................................................................ 3
4
ELECTRICAL CHARACTERISTICS .............................................................................................................................. 4
4.1
N-CH @TJ=25°C (UNLESS OTHERWISE SPECIFIED) ................................................................................................... 4
Source-Drain Diode ....................................................................................................................................... 4
4.2
P-CH @TJ=25°C (UNLESS OTHERWISE SPECIFIED ) ................................................................................................... 4
4.2.1 Source-Drain Diode ....................................................................................................................................... 5
4.1.1
5
N-CHANNEL DIAGRAMS ............................................................................................................................................. 6
N-CHANNEL DIAGRAMS ...................................................................................................................................................... 7
6
P-CHANNEL DIAGRAMS .............................................................................................................................................. 8
P-CHANNEL DIAGRAMS ....................................................................................................................................................... 9
7
PACKAGE MECHANICAL DATA ............................................................................................................................... 10
7.1
7.2
DIMENSIONAL DRAWINGS
................................................................................................. 10
PACKAGE MARKING INFORMATION AND PACKAGE CODE .......................................................................................... 10
8
DISCLAIMER ................................................................................................................................................................ 11
9
ESD SENSITIVE DEVICE ........................................................................................................................................... 11
10
TABLE OF FIGURES .................................................................................................................................................... 12
11
REVISION HISTORY .................................................................................................................................................. 12
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2
TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
3
1 Pin Assignments
S1
D2
D1
D1/D2
G1
G2
G1
S2
G2
S1
S2
PQFN package 3x3mm
Figure 1.1 TMC1320-LA pin assignments
2 Absolute Maximum Ratings
The maximum ratings may not be exceeded under any circumstances. Operating the circuit at or near
more than one maximum rating at a time for extended periods shall be avoided by application
design.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*2
Continuous Drain Current*2
Pulsed Drain Current*1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Symbol
VDS
VGS
ID@TA = 25°C
ID@TA = 70°C
IDM
PD@TA = 25°C
TSTG
TJ
N-channel
30
±20
7.3
5.8
28
P-channel
-30
±20
-5.3
-4.2
-20
2.5
0.02
-55 to 150
-55 to 150
Unit
V
V
A
A
A
W
W/°C
°C
°C
*1 Pulse width is limited by maximum junction temperature.
*2 Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec; 90˚C/W at steady state.
3 Thermal Data
Parameter
Max. Thermal Resistance, Junction-case
Max. Thermal Resistance, Junction-ambient*
Symbol
Rthj-c
Rthj-a
Value
10
50
* Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec; 90˚C/W at steady state.
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Unit
°C/W
°C/W
TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
4
4 Electrical Characteristics
4.1 N-CH @Tj=25°C (unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Static Drain-Source On-Resistance* RDS(ON)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge*
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
* Pulse width ≤ 300µs, duty cycle ≤
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
2%
Test Conditions
VGS=0V, ID=250µA
VGS=10V, ID=4A
VGS=4.5V, ID=3A
VDS= VGS, ID=250µA
VDS= 10V, ID=4A
VDS= 24V, VGS=0V
VDS= 0V, VGS=±20V
ID=4A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
Min
30
Test Conditions
VGS=0V, IS=1.2A
VGS=0V, IS=4A
dl/dt=100A/µs
Min
Typ
Max
30
48
3
1
8.5
4.5
1
2.5
8
9
16
3
250
55
50
1
±100
7.2
400
Unit
V
mΩ
mΩ
V
S
mA
mA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
4.1.1 Source-Drain Diode
Parameter
Forward On Voltage*
Reverse Recovery Time*
Reverse Recovery Charge
* Pulse width ≤ 300µs, duty cycle ≤
Symbol
VSD
trr
Qrr
2%
Typ
Max
1.2
Unit
V
ns
nC
Max
Unit
V
mΩ
mΩ
V
S
mA
mA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
15
7
4.2 P-CH @Tj=25°C (unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Static Drain-Source On-Resistance* RDS(ON)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge*
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time*
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
* Pulse width ≤ 300µs, duty cycle ≤
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
2%
Test Conditions
VGS=0V, ID=-250µA
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
VDS= VGS, ID=-250µA
VDS= -10V, ID=-4A
VDS= -24V, VGS=0V
VDS= 0V, VGS=±20V
ID=-4A
VDS=-15V
VGS=-4.5V
VDS=-15V
ID=-1A
RG=3.3Ω
VGS=-10V
VGS=0V
VDS=-25V
f=1.0MHz
Min
-30
Typ
60
80
-3
-1
9
7
1.5
3.5
10
11
22
9
570
80
75
-1
±100
11.2
910
TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
5
4.2.1 Source-Drain Diode
Parameter
Forward On Voltage*
Reverse Recovery Time*
Reverse Recovery Charge
* Pulse width ≤ 300µs, duty cycle ≤
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Symbol
VSD
trr
Qrr
2%
Test Conditions
VGS=0V, IS=-1.2A
VGS=0V, IS=-4A
dl/dt=-100A/µs
Min
Typ
19
13
Max
-1.2
Unit
V
ns
nC
TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
6
5 N-Channel Diagrams
Figure 5.1 Typical output characteristics
Figure 5.2 Typical output characteristics
Figure 5.3 On-resistance v.s. gate voltage
Figure 5.4 Normalized on-resistance v.s. junction
temperature
Figure 5.5 Forward characteristic of reverse
diode
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Figure 5.6 Gate threshold voltage v.s. junction
temperature
TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
7
N-Channel Diagrams
Figure 5.7 Gate charge characteristics
Figure 5.8 Typical capacitance characteristics
Figure 5.9 Maximum safe operating area
Figure
5.10
impedance
Figure 5.11 Switching time waveform
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Effective
transient
Figure 5.12 Gate charge waveform
thermal
TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
8
6 P-Channel Diagrams
Figure 6.1 Typical output characteristics
Figure 6.2 Typical output characteristics
Figure 6.3 On-resistance v.s. gate voltage
Figure 6.4 Normalized on-resistance v.s. junction
temperature
Figure 6.5 Forward characteristic of reverse
diode
Figure 6.6 Gate Threshold voltage v.s. junction
temperature
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TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
9
P-Channel Diagrams
Figure 6.7 Gate charge characteristics
Figure 6.8 Typical capacitance characteristics
Figure 6.9 Maximum safe operating area
Figure 6.10 Effective transient thermal impedance
Figure 6.11 Switching time waveform
Figure 6.12 Gate charge waveform
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TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
7
10
Package Mechanical Data
7.1 Dimensional Drawings
e
c1
Note:
All dimensions are in millimeters.
Drawings are not to scale.
The dimensions do not include mold protrusions.
b2
1
C
c2
D
c3
E
d1
B
A
BOTTOM VIEW
Figure 7.1 Dimensional drawings
Symbols
A
B
e
b2
C
c1
c2
C3
D
d1
E
Min
Nom
Max
2.90
2.20
0.60
0.20
2.90
0.10
1.20
0.10
0.65
0.00
0.10
3.10
2.45
0.65
0.30
3.10
0.30
1.70
0.38
0.80
0.10
0.18
3.40
2.80
0.70
0.40
3.40
0.50
2.20
0.65
1.05
0.20
0.25
7.2 Package Marking Information and Package Code
Part number
TMC1320
YWW SSS
Date code
Y: last digit of year
WW: week
SSS: sequence
Figure 7.2 Package marking information
Device
TMC1320
Package
PQFN 3 x3, I-type
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Temperature range
-55° to +150°C
Code/ Marking
TMC1320-LA
TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
11
8 Disclaimer
TRINAMIC Motion Control GmbH & Co. KG does not authorize or warrant any of its products for use in
life support systems, without the specific written consent of TRINAMIC Motion Control GmbH & Co.
KG. Life support systems are equipment intended to support or sustain life, and whose failure to
perform, when properly used in accordance with instructions provided, can be reasonably expected to
result in personal injury or death.
Information given in this data sheet is believed to be accurate and reliable. However no responsibility
is assumed for the consequences of its use nor for any infringement of patents or other rights of
third parties which may result from its use.
Specifications are subject to change without notice.
All trademarks used are property of their respective owners.
9 ESD Sensitive Device
The TMC1320-LA is an ESD sensitive CMOS device sensitive to electrostatic discharge. Take special care
to use adequate grounding of personnel and machines in manual handling. After soldering the
devices to the board, ESD requirements are more relaxed. Failure to do so can result in defect or
decreased reliability.
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TMC1320-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
12
10 Table of Figures
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
1.1 TMC1320 pin assignments .............................................................................................................................. 3
5.1 Typical output characteristics ........................................................................................................................ 6
5.2 Typical output characteristics ........................................................................................................................ 6
5.3 On-resistance v.s. gate voltage ..................................................................................................................... 6
5.4 Normalized on-resistance v.s. junction temperature ............................................................................. 6
5.5 Forward characteristic of reverse diode .................................................................................................... 6
5.6 Gate threshold voltage v.s. junction temperature .................................................................................. 6
5.7 Gate charge characteristics ............................................................................................................................ 7
5.8 Typical capacitance characteristics ............................................................................................................... 7
5.9 Maximum safe operating area ...................................................................................................................... 7
5.10 Effective transient thermal impedance .................................................................................................... 7
5.11 Switching time waveform ........................................................................................................................... 7
5.12 Gate charge waveform .................................................................................................................................. 7
6.1 Typical output characteristics ........................................................................................................................ 8
6.2 Typical output characteristics ........................................................................................................................ 8
6.3 On-resistance v.s. gate voltage ..................................................................................................................... 8
6.4 Normalized on-resistance v.s. junction temperature ............................................................................. 8
6.5 Forward characteristic of reverse diode .................................................................................................... 8
6.6 Gate Threshold voltage v.s. junction temperature ................................................................................. 8
6.7 Gate charge characteristics ............................................................................................................................ 9
6.8 Typical capacitance characteristics ............................................................................................................... 9
6.9 Maximum safe operating area ...................................................................................................................... 9
6.10 Effective transient thermal impedance .................................................................................................... 9
6.11 Switching time waveform ........................................................................................................................... 9
6.12 Gate charge waveform .................................................................................................................................. 9
7.1 Dimensional drawings .................................................................................................................................. 10
7.2 Package marking information ..................................................................................................................... 10
11 Revision History
Version
Date
Author
Description
SD – Sonja Dwersteg
0.92
1.00
2014-MAR-13
2014-MAR-18
SD
SD
1.01
2014-MAY-12
SD
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Initial version
RMS current corrected.
Front picture added.
Total gate charge corrected.
RMS motor current values in combination with TMC262,
TMC248, and TMC249 updated.
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