POWER MOSFETs FOR STEPPER MOTORS
INTEGRATED CIRCUITS
TMC1420-LA DATASHEET
Dual N & P-Channel 40V Power MOSFET with extremely low on-resistance.
High energy efficiency and good thermal performance.
APPLICATIONS
TMC1420 MOSFETs
TRINAMIC 2-phase
motor drivers:
fit best with
bipolar stepper
TMC262:
up to 4A RMS motor current
with 4xTMC1420-LA
TMC248: up to 3.5A RMS motor current
with 4xTMC1420-LA
TMC249: up to 3.5A RMS motor current
with 4xTMC1420-LA
DESCRIPTION
PRODUCT SUMMARY
BVDSS
RDS(ON)
ID
FEATURES
N-CH
P-CH
40V
26.5mΩ
8.8A
-40V
42mΩ
-7.3A
AND
The TMC 1420-LA is highly energy
efficient. Employing silicon process
technology, the TMC1420 achieves an
extremely low on-state resistance and
fastest switching performance. The
TMC1420-LA is intended for power
conversion and power management
applications that require high efficiency
and power density. The PQFN 5x6
package uses standard infrared reflow
technique with the backside heat sink
and has a very good thermal
performance. The package is similar to
other enhanced SO-8 packages in the
market, such as LFPak and PowerSO-8.
BENEFITS
N & P-Channel MOSFET Half Bridge Device
Simple Drive Requirement
Good Thermal Performance
IR-reflow and backside heat sink
Fast Switching Performance for quick motor reaction
PQFN package, 5x6 mm
RoHS Compliant and Halogen-Free
TMC262 WITH 4X TMC1420-LA MOSFETS
TMC262
P
D
N
TMC1420
+VM
S
G
D
D
N
S
P
TMC1420
Motor coil B
Description
N and P-channel enhancement mode power MOSFET
TRINAMIC Motion Control GmbH & Co. KG
Hamburg, Germany
S
P
G
Motor coil A
Order code
TMC1420-LA
G
D
RSENSE
G
S
HB1
RSENSE
D
HB2
TMC1420
S
N
+VM
D
BMB1
G
S
N
G
BMB2
D
P
S
10R
G
D
LB2
TMC1420
LB1
SRB
SRA
LA1
LA2
BMA2
BMA1
HA2
HA1
10R
G
S
Size
5 x 6 mm2
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
2
Table of Contents
1
PIN ASSIGNMENTS
................................................................................................... 3
2
ABSOLUTE MAXIMUM RATINGS
................................................................................................... 3
3
THERMAL DATA
................................................................................................... 3
4
ELECTRICAL CHARACTERISTICS
................................................................................................... 4
4.1
N-CH @TJ=25°C (UNLESS OTHERWISE SPECIFIED) ................................................................................................... 4
4.1.1 Source-Drain Diode ....................................................................................................................................... 4
4.2
P-CH @TJ=25°C (UNLESS OTHERWISE SPECIFIED) ................................................................................................... 4
4.2.1 Source-Drain Diode ....................................................................................................................................... 5
5
N-CHANNEL DIAGRAMS
................................................................................................... 6
6
P-CHANNEL DIAGRAMS
................................................................................................... 8
7
PACKAGE MECHANICAL DATA
................................................................................................. 10
7.1
7.2
7.3
DIMENSIONAL DRAWINGS
PACKAGE MARKING INFORMATION
PACKAGE CODE
................................................................................................. 10
................................................................................................. 10
................................................................................................. 10
8
DISCLAIMER
................................................................................................. 11
9
ESD SENSITIVE DEVICE
................................................................................................. 11
10
TABLE OF FIGURES
................................................................................................. 12
11
REVISION HISTORY
................................................................................................. 12
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TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
3
1 Pin Assignments
D2 D2 D1 D1
D1 D1 D2 D2
S1 G1
PQFN5x6
S2 G2
Front view / internal circuit
5
6
7
8
4
G2
3
S2
2
G1
1
S1
Backside view
Figure 1.1 TMC1420-LA pin assignments
2 Absolute Maximum Ratings
The maximum ratings may not be exceeded under any circumstances. Operating the circuit at or near
more than one maximum rating at a time for extended periods shall be avoided by application
design.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*2
Continuous Drain Current*2
Pulsed Drain Current*1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Symbol
VDS
VGS
ID@TA = 25°C
ID@TA = 70°C
IDM
PD@TA = 25°C
TSTG
TJ
N-channel P-channel
40
-40
±20
±20
8.8
-7.3
7
-5.8
30
-30
3.57
-55 to 150
-55 to 150
Unit
V
V
A
A
A
W
°C
°C
*1 Pulse width is limited by maximum junction temperature.
*2 Surface mounted on 1 in² copper pad of FR4 board, t ≤ 10sec; 85˚C/W at steady state.
3 Thermal Data
Parameter
Max. Thermal Resistance, Junction-case
Max. Thermal Resistance, Junction-ambient*
Symbol
Rthj-c
Rthj-a
N-channel
6
35
P-channel
6
35
* Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec; 85˚C/W at steady state.
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Unit
°C/W
°C/W
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
4
4 Electrical Characteristics
4.1 N-CH @Tj=25°C (unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Static Drain-Source On-Resistance* RDS(ON)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
* Pulse test
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Test Conditions
VGS=0V, ID=250µA
VGS=10V, ID=7A
VGS=4.5V, ID=5A
VDS= VGS, ID=250µA
VDS= 10V, ID=7A
VDS= 32V, VGS=0V
VDS= 0V, VGS=±20V
ID=7A
VDS=20V
VGS=4.5V
VDS=20V
ID=1A
RG=3.3Ω
VGS=5V
VGS=0V
VDS=15V
f=1.0MHz
f=1.0MHz
Min
40
Test Conditions
VGS=0V, IS=2.9A
VGS=0V, IS=7A
dl/dt=100A/µs
Min
1
Typ
Max
21.2
32.7
1.7
14
26.5
45
3
7
2.2
3.7
6
18
17
19
660
120
75
2.2
10
±30
11.2
1050
4.4
Unit
V
mΩ
mΩ
V
S
mA
mA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
4.1.1 Source-Drain Diode
Parameter
Forward On Voltage*
Reverse Recovery Time
Reverse Recovery Charge
* Pulse test
Symbol
VSD
trr
Qrr
Typ
Max
1.2
Unit
V
ns
nC
Typ
Max
33.3
53.3
-1.7
11
42
70
-3
Unit
V
mΩ
mΩ
V
S
mA
mA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
24
21
4.2 P-CH @Tj=25°C (unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Static Drain-Source On-Resistance* RDS(ON)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
* Pulse test
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Test Conditions
VGS=0V, ID=-250µA
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-3A
VDS= VGS, ID=-250µA
VDS= -10V, ID=-5A
VDS= -32V, VGS=0V
VDS= 0V, VGS=±20V
ID=-5A
VDS=-20V
VGS=-4.5V
VDS=-20V
ID=-1A
RG=3.3Ω
VGS=-5V
VGS=0V
VDS=-15V
f=1.0MHz
f=1.0MHz
Min
-40
-1
11.5
2.3
7
7
20
34
29
720
205
165
6
-10
±30
18.4
1150
12
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
5
4.2.1 Source-Drain Diode
Parameter
Forward On Voltage*
Reverse Recovery Time
Reverse Recovery Charge
* Pulse test
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Symbol
VSD
trr
Qrr
Test Conditions
VGS=0V, IS=-2.9A
VGS=0V, IS=-5A
dl/dt=100A/µs
Min
Typ
32
34
Max
-1.2
Unit
V
ns
nC
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
6
5 N-Channel Diagrams
Figure 5.1 Typical output characteristics
Figure 5.3 On-resistance v.s. gate voltage
Figure 5.5 Forward characteristic of reverse
diode
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Figure 5.2 Typical output characteristics
Figure 5.4 Normalized on-resistance v.s. junction
temperature
Figure 5.6 Gate threshold voltage v.s. junction
temperature
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
7
N-Channel Diagrams
Figure 5.7 Gate charge characteristics
Figure 5.8 Typical capacitance characteristics
Figure 5.9 Maximum safe operating area
Figure
5.10
impedance
Figure 5.11 Transfer characteristics
Figure 5.12 Maximum continuous drain current
v.s. ambient temperature
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Effective
transient
thermal
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
8
6 P-Channel Diagrams
Figure 6.1 Typical output characteristics
Figure 6.2 Typical output characteristics
Figure 6.3 On-resistance v.s. gate voltage
Figure 6.4 Normalized on-resistance v.s. junction
temperature
Figure 6.5 Forward characteristic of reverse
diode
Figure 6.6 Gate Threshold voltage v.s. junction
temperature
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TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
9
P-Channel Diagrams
Figure 6.7 Gate charge characteristics
Figure 6.8 Typical capacitance characteristics
Figure 6.9 Maximum safe operating area
Figure 6.10 Effective transient thermal impedance
Figure 6.11 Transfer characteristics
Figure 6.12 Maximum continuous drain current
v.s. ambient temperature
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TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
7
10
Package Mechanical Data
7.1 PQFN 5x6 Dimensional Drawings
Note:
All dimensions are in millimeters.
Drawings are not to scale.
The dimensions do not include
mold protrusions.
Symbols
Min
Nom
A
0.90
1.00
b
0.33
0.41
C
0.20
D1
4.80
4.90
D2
E
5.90
6.00
E1 (reference) 5.70
5.75
E2 (reference) 3.38
3.58
e
1.27 BSC
H
K (reference)
0.70
L
0.51
0.61
L1
(reference)
0˚
Figure 7.1 Dimensional drawings
7.2 Package Marking Information
Part number
Meet RoHS requirement for low volatage MOSFET only
TMC1420
YWW SSS
Package code
Date code
Y: last digit of year
WW: week
SSS: sequence
Figure 7.2 Package marking information
7.3 Package Code
Device
TMC1420
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Package
PQFN 5x6
Temperature range
-55° to +150°C
Code/ Marking
TMC1420-LA
Max
1.10
0.51
5.10
4.20
6.10
5.80
3.78
0.62
0.71
0.20
12˚
TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
11
8 Disclaimer
TRINAMIC Motion Control GmbH & Co. KG does not authorize or warrant any of its products for use in
life support systems, without the specific written consent of TRINAMIC Motion Control GmbH & Co.
KG. Life support systems are equipment intended to support or sustain life, and whose failure to
perform, when properly used in accordance with instructions provided, can be reasonably expected to
result in personal injury or death.
Information given in this data sheet is believed to be accurate and reliable. However no responsibility
is assumed for the consequences of its use nor for any infringement of patents or other rights of
third parties which may result from its use.
Specifications are subject to change without notice.
All trademarks used are property of their respective owners.
9 ESD Sensitive Device
The TMC1420-LA is an ESD sensitive CMOS device sensitive to electrostatic discharge. Take special care
to use adequate grounding of personnel and machines in manual handling. After soldering the
devices to the board, ESD requirements are more relaxed. Failure to do so can result in defect or
decreased reliability.
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TMC1420-LA DATASHEET (Rev. 1.01 / 2014-MAY-12)
12
10 Table of Figures
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
1.1 TMC1420 pin assignments .............................................................................................................................. 3
5.1 Typical output characteristics ........................................................................................................................ 6
5.2 Typical output characteristics ........................................................................................................................ 6
5.3 On-resistance v.s. gate voltage ..................................................................................................................... 6
5.4 Normalized on-resistance v.s. junction temperature ............................................................................. 6
5.5 Forward characteristic of reverse diode .................................................................................................... 6
5.6 Gate threshold voltage v.s. junction temperature .................................................................................. 6
5.7 Gate charge characteristics ............................................................................................................................ 7
5.8 Typical capacitance characteristics ............................................................................................................... 7
5.9 Maximum safe operating area ...................................................................................................................... 7
5.10 Effective transient thermal impedance .................................................................................................... 7
5.11 Transfer characteristics ................................................................................................................................. 7
5.12 Maximum continuous drain current v.s. ambient temperature ........................................................ 7
6.1 Typical output characteristics ........................................................................................................................ 8
6.2 Typical output characteristics ........................................................................................................................ 8
6.3 On-resistance v.s. gate voltage ..................................................................................................................... 8
6.4 Normalized on-resistance v.s. junction temperature ............................................................................. 8
6.5 Forward characteristic of reverse diode .................................................................................................... 8
6.6 Gate Threshold voltage v.s. junction temperature ................................................................................. 8
6.7 Gate charge characteristics ............................................................................................................................ 9
6.8 Typical capacitance characteristics ............................................................................................................... 9
6.9 Maximum safe operating area ...................................................................................................................... 9
6.10 Effective transient thermal impedance .................................................................................................... 9
6.11 Transfer characteristics ................................................................................................................................. 9
6.12 Maximum continuous drain current v.s. ambient temperature ........................................................ 9
7.1 Dimensional drawings .................................................................................................................................. 10
7.2 Package marking information ..................................................................................................................... 10
11 Revision History
Version
Date
Author
Description
SD – Sonja Dwersteg
1.00
1.01
2013-MAR-18
2014-MAY-12
SD
SD
Table 11.1 Documentation revisions
www.trinamic.com
Initial version
RMS motor current values in combination with TMC262,
TMC248, and TMC249 updated.
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