POWER MOSFETs FOR STEPPER MOTORS
INTEGRATED CIRCUITS
TMC1620-TO DATASHEET
Dual N & P-Channel 60V Power MOSFET with low on-resistance and fast switching performance
High energy efficiency and good thermal performance.
APPLICATIONS
TMC1620-TO MOSFETs fit best with
TRINAMIC
bipolar
stepper
motor
drivers:
TMC262:
two-phase stepper motor
driver; up to 3.5A (48V DC) or
4.5A (24V DC) RMS motor
current with 4xTMC1620-TO.
three-phase stepper motor
driver; up to 3.5A (48V DC) or
4.5A (24V DC) RMS motor
current with 3xTMC1620-TO.
TMC389:
PRODUCT SUMMARY
BVDSS
RDS(ON)
ID
FEATURES
N-CH
P-CH
60V
36mΩ
6.6A
-60V
75mΩ
-4.7A
AND
DESCRIPTION
This
advanced
TMC1620-TO
power
MOSFET provides the designer with the
best combination of fast switching,
ruggedized device design, low onresistance and cost-effectiveness. The
highly energy efficient TMC1620 is
intended for power conversion and
power management applications that
require high efficiency and power
density.
The TO-252-4L 6.5x10mm package has a
very good thermal performance.
BENEFITS
N & P-Channel MOSFET Half Bridge Device
Simple Drive Requirement
Good Thermal Performance
Fast Switching Performance for quick motor reaction
TO-252-4L Package, 6.5x10mm
RoHS Compliant and Halogen-Free
TMC262 WITH 4X TMC1620-TO MOSFETS
TMC262
TMC1620
P
D
S
N
+VM
S
G
D
D
N
S
P
TMC1620
Motor coil B
Description
N and P-channel enhancement mode power MOSFET
TRINAMIC Motion Control GmbH & Co. KG
Hamburg, Germany
TMC1620
P
G
Motor coil A
Order code
TMC1620-TO
G
D
RSENSE
G
S
HB1
RSENSE
D
HB2
S
N
+VM
D
BMB1
G
S
N
G
BMB2
D
P
S
10R
G
D
LB2
TMC1620
LB1
SRB
SRA
LA1
LA2
BMA2
BMA1
HA2
HA1
10R
G
S
Size
6.5 x 10 mm2
TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12)
Table of Contents
TABLE OF CONTENTS ........................................................................................................................................................... 2
1
PIN ASSIGNMENTS ...................................................................................................................................................... 3
2
ABSOLUTE MAXIMUM RATINGS .............................................................................................................................. 3
3
THERMAL DATA ............................................................................................................................................................ 3
4
ELECTRICAL CHARACTERISTICS .............................................................................................................................. 4
4.1
N-CH @TJ=25°C (UNLESS OTHERWISE SPECIFIED) ................................................................................................... 4
Source-Drain Diode ....................................................................................................................................... 4
4.2
P-CH @TJ=25°C (UNLESS OTHERWISE SPECIFIED) ................................................................................................... 4
4.2.1 Source-Drain Diode ....................................................................................................................................... 5
4.1.1
5
N-CHANNEL DIAGRAMS ............................................................................................................................................. 6
N-CHANNEL DIAGRAMS ...................................................................................................................................................... 7
6
P-CHANNEL DIAGRAMS .............................................................................................................................................. 8
P-CHANNEL DIAGRAMS ....................................................................................................................................................... 9
7
PACKAGE MECHANICAL DATA ............................................................................................................................... 10
7.1
7.2
DIMENSIONAL DRAWINGS
................................................................................................. 10
PACKAGE MARKING INFORMATION AND PACKAGE CODE .......................................................................................... 10
8
DISCLAIMER ................................................................................................................................................................ 11
9
ESD SENSITIVE DEVICE ........................................................................................................................................... 11
10
TABLE OF FIGURES .................................................................................................................................................... 12
11
REVISION HISTORY .................................................................................................................................................. 12
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2
TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12)
3
1 Pin Assignments
D1/D2
D1
D2
G1
S1 G1
S2 G2
G2
S1
S2
Figure 1.1 TMC1620-TO pin assignments
2 Absolute Maximum Ratings
The maximum ratings may not be exceeded under any circumstances. Operating the circuit at or near
more than one maximum rating at a time for extended periods shall be avoided by application
design.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*2
Continuous Drain Current*2
Pulsed Drain Current*1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Symbol
VDS
VGS
ID@TA = 25°C
ID@TA = 70°C
IDM
PD@TA = 25°C
TSTG
TJ
N-channel P-channel
60
-60
±20
±20
6.6
-4.7
5.3
-3.8
20
-20
3.13
-55 to 150
-55 to 150
Unit
V
V
A
A
A
W
°C
°C
*1 Pulse width is limited by maximum junction temperature.
*2 N-CH, P-CH are same, mounted on 2oz FR4 board t≤10s.
3 Thermal Data
Parameter
Max. Thermal Resistance, Junction-case
Max. Thermal Resistance, Junction-ambient*
Symbol
Rthj-c
Rthj-a
Value
6
40
* Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec; 85˚C/W at steady state.
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Unit
°C/W
°C/W
TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12)
4
4 Electrical Characteristics
4.1 N-CH @Tj=25°C (unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Static Drain-Source On-Resistance* RDS(ON)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge*
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
* Pulse test
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Test Conditions
VGS=0V, ID=250µA
VGS=10V, ID=6A
VGS=4.5V, ID=4A
VDS= VGS, ID=250µA
VDS= 10V, ID=5A
VDS= 48V, VGS=0V
VDS= 0V, VGS=±20V
ID=5A
VDS=48V
VGS=4.5V
VDS=30V
ID=5A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Min
60
Test Conditions
VGS=0V, IS=2.4A
VGS=0V, IS=5A
dl/dt=100A/µs
Min
Typ
Max
36
42
3
1
12.5
12
3
7
7
10.5
23
5
975
75
65
1.6
10
±100
19.2
1560
3.2
Unit
V
mΩ
mΩ
V
S
mA
mA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
4.1.1 Source-Drain Diode
Parameter
Forward On Voltage*
Reverse Recovery Time*
Reverse Recovery Charge
* Pulse test
Symbol
VSD
trr
Qrr
Typ
Max
1.3
Unit
V
ns
nC
Max
Unit
V
mΩ
mΩ
V
S
mA
mA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
23
22
4.2 P-CH @Tj=25°C (unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Static Drain-Source On-Resistance* RDS(ON)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge*
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time*
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
* Pulse test
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Test Conditions
VGS=0V, ID=-250µA
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
VDS= VGS, ID=-250µA
VDS= -10V, ID=-3A
VDS= -48V, VGS=0V
VDS= 0V, VGS=±20V
ID=-3A
VDS=-48V
VGS=-4.5V
VDS=-30V
ID=-3A
RG=3.3Ω
VGS=-10V
VGS=0V
VDS=-25V
f=1.0MHz
f=1.0MHz
Min
-60
Typ
75
90
-3
-1
11
14
2.5
8
9
9.5
42
28
1000
125
95
1.6
-10
±100
22.4
1600
3.2
TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12)
5
4.2.1 Source-Drain Diode
Parameter
Forward On Voltage*
Reverse Recovery Time
Reverse Recovery Charge
* Pulse test
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Symbol
VSD
trr
Qrr
Test Conditions
VGS=0V, IS=-2.4A
VGS=0V, IS=-3A
dl/dt=-100A/µs
Min
Typ
30
45
Max
-1.3
Unit
V
ns
nC
TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12)
6
5 N-Channel Diagrams
Figure 5.2 Typical output characteristics
Figure 5.1 Typical output characteristics
Figure 5.3 On-resistance v.s. gate voltage
Figure 5.4 Normalized on-resistance v.s. junction
temperature
Figure 5.5 Forward characteristic of reverse
diode
Figure 5.6 Gate threshold voltage v.s. junction
temperature
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TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12)
7
N-Channel Diagrams
Figure 5.7 Gate charge characteristics
Figure 5.8 Typical capacitance characteristics
Figure 5.9 Maximum safe operating area
Figure
5.10
impedance
Figure 5.11 Switching time waveform
Figure 5.12 Gate charge waveform
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Effective
transient
thermal
TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12)
8
6 P-Channel Diagrams
Figure 6.1 Typical output characteristics
Figure 6.2 Typical output characteristics
Figure 6.3 On-resistance v.s. gate voltage
Figure 6.4 Normalized on-resistance v.s. junction
temperature
Figure 6.5 Forward characteristic of reverse
diode
Figure 6.6 Gate Threshold voltage v.s. junction
temperature
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TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12)
9
P-Channel Diagrams
Figure 6.7 Gate charge characteristics
Figure 6.8 Typical capacitance characteristics
Figure 6.9 Maximum safe operating area
Figure 6.10 Effective transient thermal impedance
Figure 6.11 Switching time waveform
Figure 6.12 Gate charge waveform
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TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12)
7
10
Package Mechanical Data
7.1 Dimensional Drawings
Note:
All dimensions are in millimeters.
Drawings are not to scale.
The dimensions do not include mold protrusions.
Figure 7.1 Dimensional drawings
Symbols
Min
Nom
Max
A
B
C
D
P
S
E3
R
G
H
J
K
L
M
6.40
5.20
9.40
2.40
6.60
5.35
9.80
2.70
1.27 REF.
0.65
4.00
1.00
0.50
2.30
0.50
0.075
1.20
5.60
6.80
5.50
10.20
3.00
0.50
3.50
0.80
0.40
2.20
0.45
0.00
0.90
5.40
0.80
4.50
1.20
0.60
2.40
0.55
0.15
1.50
5.80
7.2 Package Marking Information and Package Code
Part Number
TMC1620-TO
Date Code
Y:
last digit of the year
WW: week
SSS:
sequence
YWW SSS
Figure 7.2 Package marking information
Device
TMC1620
Package
TO-252-4L package 6.5x10
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Temperature range
-55° to +150°C
Code/ Marking
TMC1620-TO
TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12)
11
8 Disclaimer
TRINAMIC Motion Control GmbH & Co. KG does not authorize or warrant any of its products for use in
life support systems, without the specific written consent of TRINAMIC Motion Control GmbH & Co.
KG. Life support systems are equipment intended to support or sustain life, and whose failure to
perform, when properly used in accordance with instructions provided, can be reasonably expected to
result in personal injury or death.
Information given in this data sheet is believed to be accurate and reliable. However no responsibility
is assumed for the consequences of its use nor for any infringement of patents or other rights of
third parties which may result from its use.
Specifications are subject to change without notice.
All trademarks used are property of their respective owners.
9 ESD Sensitive Device
The TMC1620-TO is an ESD sensitive CMOS device sensitive to electrostatic discharge. Take special care
to use adequate grounding of personnel and machines in manual handling. After soldering the
devices to the board, ESD requirements are more relaxed. Failure to do so can result in defect or
decreased reliability.
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TMC1620-TO DATASHEET (Rev. 1.01 / 2014-MAY-12)
12
10 Table of Figures
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
1.1 TMC1620 pin assignments .............................................................................................................................. 3
5.1 Typical output characteristics ........................................................................................................................ 6
5.2 Typical output characteristics ........................................................................................................................ 6
5.3 On-resistance v.s. gate voltage ..................................................................................................................... 6
5.4 Normalized on-resistance v.s. junction temperature ............................................................................. 6
5.5 Forward characteristic of reverse diode .................................................................................................... 6
5.6 Gate threshold voltage v.s. junction temperature .................................................................................. 6
5.7 Gate charge characteristics ............................................................................................................................ 7
5.8 Typical capacitance characteristics ............................................................................................................... 7
5.9 Maximum safe operating area ...................................................................................................................... 7
5.10 Effective transient thermal impedance .................................................................................................... 7
5.11 Switching time waveform ........................................................................................................................... 7
5.12 Gate charge waveform .................................................................................................................................. 7
6.1 Typical output characteristics ........................................................................................................................ 8
6.2 Typical output characteristics ........................................................................................................................ 8
6.3 On-resistance v.s. gate voltage ..................................................................................................................... 8
6.4 Normalized on-resistance v.s. junction temperature ............................................................................. 8
6.5 Forward characteristic of reverse diode .................................................................................................... 8
6.6 Gate Threshold voltage v.s. junction temperature ................................................................................. 8
6.7 Gate charge characteristics ............................................................................................................................ 9
6.8 Typical capacitance characteristics ............................................................................................................... 9
6.9 Maximum safe operating area ...................................................................................................................... 9
6.10 Effective transient thermal impedance .................................................................................................... 9
6.11 Switching time waveform ........................................................................................................................... 9
6.12 Gate charge waveform .................................................................................................................................. 9
7.1 Dimensional drawings .................................................................................................................................. 10
7.2 Package marking information ..................................................................................................................... 10
11 Revision History
Version
Date
Author
Description
SD – Sonja Dwersteg
0.90
1.00
1.01
2014-FEB-26
2014-MAR-18
2014-MAY-12
www.trinamic.com
SD
SD
SD
Initial version
New front picture, thermal data corrected
RMS motor current in combination with TMC262 and
TMC389 updated.
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