AGR21180EF

AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 0.35 Unit °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C Derate Above 25 ˇ C Operating Junction Temperature Storage Temperature Range Sym Value 65 VDSS VGS –0.5, 15 PD 500 — 2.86 TJ 200 TSTG –65, 150 Unit Vdc Vdc W W/°C °C °C 375D–03, STYLE 1 Figure 1. AGR21180EF (flanged) Package Features Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel bandwidth (BW), adjacent channel BW = 3.84 MHz at F1 – 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 – 10 MHz and F2 + 10 MHz. Typical peak-to-average (P/A) ratio of 8.5 dB at 0.01% (probability) CCDF: — Output power: 38 W. — Power gain: 14 dB. — Efficiency: 26%. — IM3: –36 dBc. — ACPR: –39 dBc. — Return loss: –12 dB. High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of