BAS40-04

BAS40 / -04 / -05 / -06 200mW, Low V F, SMD Schottky Barrier Diode Small Signal Diode A F Features Metal-on-silicon Shcottky Barrier Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code B E C D G Mechanical Data Case : Flat lead SOT 23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.008gram (approximately) Dimensions A B C D E F G Unit (mm) Min 2.80 1.20 0.30 1.80 2.25 0.90 Max 3.00 1.40 0.50 2.00 2.55 1.20 Unit (inch) Min 0.110 0.047 0.012 0.071 0.089 0.035 Max 0.118 0.055 0.020 0.079 0.100 0.043 0.550 REF 0.022 REF BAS40 BAS40-04 BAS40-05 BAS40-06 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range (Note 2) Symbol PD VRRM VR IFRM IO IFSM RθJA TJ, TSTG Value 200 40 40 200 200 0.6 357 -65 to + 125 Units mW V V mA mA A °C/W °C Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage IR= IF= IF= IF= 10μA 1mA 10mA 40mA IR CJ Trr VF Symbol V(BR) Min 40 Max 0.38 0.50 1.00 0.2 5 5.0 μA pF ns V Units V VR= Reverse Leakage Current 30V f=1.0MHz VR=1V, Junction Capacitance Reverse Recovery Time IF=IR=10mA, RL=100Ω, IRR=1mA Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Notes:2. Valid provided that electrodes are kept at ambient temperature Version : C09 BAS40 / -04 / -05 / -06 200mW, Low VF, SMD Schottky Barrier Diode Small Signal Diode Rating and Sharacteristic Curves ( BAS40 / -04 / -05 / -06 ) FIG.1- POWER DERATING CURVE PEAK FORWARD SURGE CURRENT. (mA) FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER LEG 600 8.3ms Single Half Sine Wave (JEDEC Method) PD, POWER DISSIPATION (mW) 200 100 300 0 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE ( C) 1 2 5 10 20 NUMBER OF CYCLES AT 60Hz 50 100 FIG.3- TYPICAL FORWARD CHARACTERISTICS 1 10000 FIG.4- TYPICAL REVERSE CHARACTERISTICS TA= 125 0C IR, INSTANTANEOUS REVERSE CURRENT. ( nnA) INSTANTANEOUS FORWARD CURRENT (mA) 1000 TA= 70 0C 0.1 TA= -40 0C TA= 0 0C TA= 25 0C TA= 70 0C 100 0.01 TA= 25 0C 10 TA= 0 0C 0.001 TA= 125 0C 1 TA= -40 0C 0.0001 0 0.2 1.0 0.8 Tj, INSTANTANEOUS FORWARD VOLTAGE (mV) 0.4 0.6 1.2 0.1 0 10 20 VR, REVERSE VOLTAGE. (V) 30 40 FIG.5- TYPICAL TOTAL CAPACITANCE VS REVERSE VOLTAGE 100 4.0 f = 1.0MHz FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE. (OC/W) JUNCTION CAPACITANCE (pF) 10 2.0 1 0 0.1 0 5 10 REVERSE VOLTAGE 15 20 0.01 0.1 1 PULSE DURATION. (sec) 10 100 Version : C09