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SF2005PT

SF2005PT

  • 厂商:

    TSC

  • 封装:

  • 描述:

    SF2005PT - 20.0 AMPS. Glass Passivated Super Fast Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
SF2005PT 数据手册
SF2001PT - SF2008PT 20.0 AMPS. Glass Passivated Super Fast Rectifiers TO-3P/TO-247AD Features Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Glass passivated chip junctions Superfast recovery time, high voltage Low forward voltage, high current capability Low thermal resistance Low power loss, high efficiency High temperature soldering guaranteed: 260oC / 10 seconds, 0.16”(4.06mm) lead lengths at 5 lbs. (2.3kg) tesion Mechanical Data Cases: JEDEC TO-3P/TO-247AD molded plastic Terminals: Pure tin plated, lead free. solderable per MIL-STD-750,Method 2026 Polarity: As marked Mounting position: Any Weight: 0.2 ounce, 5.6 grams Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% o Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at Tc=100 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @10A @ 20A Maximum D.C. Reverse Current at Rated DC Blocking Voltage @ Tc=25 oC @ Tc=100 oC Maximum Reverse Recovery Time(Note 2) TJ=25 oC Symbol SF VRRM VRMS VDC I(AV) IFSM VF IR 2001 PT 50 35 50 SF 2002 PT 100 70 100 SF 2003 PT 150 105 150 SF 2004 PT 200 140 200 SF 2005 PT 300 210 300 SF 2006 PT 400 280 400 SF 2007 PT 500 350 500 SF 2008 PT 600 420 600 Units V V V A A 20 180 0.95 1.1 1.3 1.5 10 400 35 175 2.5 -55 to +150 -55 to +150 1.7 1.9 V uA nS pF o C/W o C o C Cj Typical Junction Capacitance (Note 1) RθJC Typical Thermal Resistance (Note 3) TJ Operating Junction Temperature Range TSTG Storage Temperature Range 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Notes: 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Recover to 0.25A. 3. Thermal Resistance from Junction to Case Mount on Heatsink size 3” x 5” x 0.25” Al-Plate. Trr Version: A06 RATINGS AND CHARACTERISTIC CURVES (SF2001PT THRU SF2008PT) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- TYPICAL REVERSE CHARACTERISTICS PER LEG 1000 AVERAGE FORWARD CURRENT. (A) 25 20 15 10 5 0 INSTANTANEOUS REVERSE CURRENT MICRO AMPERES 100 TJ=100 0C 10 TJ=75 0C 0 50 CASE TEMPERATURE. ( C) o 100 150 PEAK FORWARD SURGE CURRENT. (A) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 210 180 1 TJ=25 0C 0.1 150 120 90 60 30 8.3ms Single Half Sine Wave JEDEC Method TJ = TJ max. 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 40 INSTANTANEOUS FORWARD CURRENT. (A) 0 20 10 SF2001PT-SF2004PT 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE PER LEG 1000 500 SF2005PT-SF2006PT CAPACITANCE.(pF) 200 100 50 Tj=25 C f=1MHz Vsig=50mVp-p 0 1 SF2007PT-SF2008PT 20 10 0.1 0.2 0.1 Pulse Width=300 s 2% Duty Cycle 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.5 1 5 10 50 100 REVERSE VOLTAGE. (V) FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06
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