TSD1760CPS

TSD1760 Low Vce(sat) NPN Transistor Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 30V Ic = 3A VCE (SAT), = 0.25V(typ.) @Ic / Ib = 2A / 0.2A Features Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSD1760CP Packing Tape & Reel Package TO-252 Structure Epitaxial planar type. Complementary to TSB1184 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 2mS DC Pulse PD TJ TSTG Symbol VCBO VCEO VEBO IC Limit 40V 30V 5 3 7 (note 1) 1.0 +150 - 55 to +150 Unit V V V A W o o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 40V, IE = 0 VEB = 4V, IC = 0 IC / IB = 2.0A / 0.2A VCE = 2V, IC = 1A VCE = 5V, IC = 100mA, f = 100MHz VCB = 10V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob Min 40 30 5 ---120 -- Typ -----0.25 -90 45 Max ---1 1 0.5 560 --- Unit V V V uA uA V MHz pF Note : pulse test: pulse width